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D-101-54
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TE Connectivity Raychem Cable Protection
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Cables, Wires - Management - Solder Sleeve - SOLDERSLEEVE |
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50.79KB |
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D1015UK
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Semelab
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GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 125W-28V-400MHz PUSH-PULL |
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88.36KB |
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D1015UK
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Semelab
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Metal Gate RF Silicon FET |
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64.75KB |
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D1015UK
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Semelab
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METAL GATE RF SILICON FET |
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65.79KB |
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D1015UK
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Unknown
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Shortform Datasheet & Cross References Data |
Short Form |
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76.63KB |
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MBRD1015T
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Microdiode Semiconductor
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SBD10150CT
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JCET Group
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SBD10150CT and SBDF10150CT Schottky barrier rectifiers feature 150 V reverse voltage, 10 A average rectified current, low forward voltage drop of 0.69 V at 125°C, and surge current capability of 120 A, housed in TO-220-3L/TO-220F packages. |
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SBDD10150CT
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JCET Group
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Schottky barrier rectifier SBDD10150CT with 150 V peak repetitive reverse voltage, 10 A average rectified output current, low forward voltage drop of 0.69 V typical at 125°C junction temperature, and guard ring die construction for transient protection. |
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MBRD10150
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SUNMATE electronic Co., LTD
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Schottky barrier rectifier diode with 10A average forward rectified current, 40 to 200V DC blocking voltage range, low forward voltage drop, high surge capability, and operating junction temperature from -55 to +150°C. |
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MBRD1015T
