D1 SMD Search Results

smd diode S2

Abstract: S16G1 POWER MOSFET Rise Time 1 ns 1A smd mosfet equivalent smd mosfet KI8205T 8v smd mosfet DIODE S2 mosfet smd mpf164
Contextual Info: MOSFET SMD Type Dual N-Channel High Density Trench MOSFET KI8205T Unit: mm Features Super high dense cell trench design for low RDS on . Rugged and reliable. Surface Mount package. 1 pin mark D1 D2 G1 S1 1 6 G1 D1/D2 2 5 D1/D2 S2 3 4 G2 G2 S1 S2 Absolute Maximum Ratings Ta = 25

9926b

Contextual Info: MOSFET SMD Type Dual N-Channel MOSFET SI9926BDY • Features SOP-8 ● RDS on = 0.027 Ω @ VGS = 4.5 V ● RDS(on) = 0.036 Ω @ VGS = 2.5 V. D1 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 D2 G2 G1 S1 S2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol

Contextual Info: MOSFET SMD Type Dual N-Channel MOSFET KI9926A • Features SOP-8 ● RDS on = 0.030 Ω @ VGS = 4.5 V ● RDS(on) = 0.040 Ω @ VGS = 2.5 V. D1 D2 G1 G2 S1 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S2 Top View ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating

Contextual Info: MOSFET SMD Type Dual N-Channel MOSFET SI9926DY • Features SOP-8 ● RDS on ≤ 0.032 Ω @ VGS = 4.5 V ● RDS(on) ≤ 0.045 Ω @ VGS = 2.5 V. D1 G1 D2 G2 S1 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S2 Top View ■ Absolute Maximum Ratings Ta = 25℃ Parameter

5n20v

Contextual Info: Transistors SMD Type Dual N-Channel Enhancement Mode MOSFET 5N20V TSSOP-8 • Features Unit: mm ● RDS ON ≤40mΩ @VGS=4.5V ● RDS(ON)≤45mΩ @VGS=2.7V D1 D2 S1 S2 S1 S2 D1 G2 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2

Contextual Info: Transistors SMD Type Dual N-Channel Enhancement Mode MOSFET FTD2019 TSSOP-8 • Features Unit: mm ● RDS ON =28mΩ Max. @VGS=4V ● RDS(ON)=35mΩ Max. @VGS=2.5V D1 D2 S1 S2 S1 S2 D1 G2 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2

Contextual Info: Surface Mounting Guide MLC Chip Capacitors REFLOW SOLDERING D2 D1 D3 D4 D5 Dimensions in millimeters inches Case Size 0201 0402 0603 0805 1206 1210 1808 1812 1825 2220 2225 D1 D2 D3 D4 D5 0.85 (0.033) 1.70 (0.067) 2.30 (0.091) 3.00 (0.118) 4.00 (0.157) 4.00 (0.157)

Sn60Pb40 solder

Abstract: failure rate avx 0201 ceramic capacitor Sn60Pb40 250C260c EIA-RS-198
Contextual Info: Surface Mounting Guide MLC Chip Capacitors REFLOW SOLDERING D2 D1 D3 D4 D5 Dimensions in millimeters inches Case Size 0201 0402 0603 0805 1206 1210 1808 1812 1825 2220 2225 D1 D2 D3 D4 D5 0.85 (0.033) 1.70 (0.067) 2.30 (0.091) 3.00 (0.118) 4.00 (0.157) 4.00 (0.157)

Contextual Info: Surface Mounting Guide MLC Chip Capacitors REFLOW SOLDERING D2 D1 D3 D4 D5 Dimensions in millimeters inches Case Size 0201 0402 0603 0805 1206 1210 1808 1812 1825 2220 2225 D1 D2 D3 D4 D5 0.85 (0.033) 1.70 (0.067) 2.30 (0.091) 3.00 (0.118) 4.00 (0.157) 4.00 (0.157)

EIA-541

Abstract: IRF7503 st smd diode marking code diode AR s1 39
Contextual Info: PD - 9.1266E IRF7503 PRELIMINARY HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching 1 8 D1 G1 2 7 D1 S2 3 6 4 5 S1 G2

IRF7506

Contextual Info: PD - 9.1268D IRF7506 PRELIMINARY HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching 1 8 D1 G1 2 7 D1 S2 3 6 4 5 S1 G2

66a smd

Abstract: smd diode S2 64a A E 82A BSO203P
Contextual Info: BSO203P OptiMOS-P Small-Signal-Transistor Product Summary Feature • P-Channel • Enhancement mode VDS -20 V RDS on 21 mΩ ID • Super Logic Level (2.5 V rated) • 150°C operating temperature • Avalanche rated • dv/dt rated S1 1 8 D1 G1 2 7 D1

BSO303P

Abstract: Q67042-S4010
Contextual Info: BSO303P OptiMOS-P Small-Signal-Transistor Product Summary Feature • Dual P-Channel • Enhancement mode VDS -30 V RDS on 21 mΩ ID • Logic Level • 150°C operating temperature • Avalanche rated • dv/dt rated S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2

smd diode S2 64a

Abstract: BSO203P
Contextual Info: BSO203P OptiMOS -P Power-Transistor TM Product Summary Feature • P-Channel • Enhancement mode • 150°C operating temperature • Avalanche rated • dv/dt rated BSO203P P-SO 8 V RDS on 21 mΩ -8.2 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View Package

BSO211P

Contextual Info: BSO211P OptiMOS -P Power-Transistor TM Product Summary Feature • Dual P-Channel • Enhancement mode • 150°C operating temperature • Avalanche rated • dv/dt rated BSO211P P-SO 8 V RDS on 67 mΩ -4.7 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View

BSO207P

Contextual Info: BSO207P TM OptiMOS -P Power-Transistor Product Summary Feature • Dual P-Channel • Enhancement mode • 150°C operating temperature • Avalanche rated • dv/dt rated BSO207P P-SO 8 V RDS on 45 mΩ -5.7 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View

BSO303P

Contextual Info: BSO303P OptiMOS -P Power-Transistor TM Product Summary Feature • Dual P-Channel • Enhancement mode • 150°C operating temperature • Avalanche rated • dv/dt rated BSO303P P-SO 8 V RDS on 21 mΩ -8.2 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View

IRF7501

Contextual Info: Previous Datasheet Index Next Data Sheet PRELIMINARY PD 9.1265E IRF7501 HEXFET Power MOSFET l l l l l l l 1 8 D1 G1 2 7 D1 S2 3 6 4 5 S1 Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel

SOT23 PMOS

Abstract: D0218 diode EGP 30b tSoP38xxx TSOP5700 2N7002x tSoP4xxx jfet to 92 TSOP34XXX SMD DO-213 ZENER DIODE
Contextual Info: Si6926ADQ Vishay Siliconix New Product Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.030 @ VGS = 4.5 V 4.5 0.033 @ VGS = 3.0 V 4.2 0.035 @ VGS = 2.5 V 3.9 0.043 @ VGS = 1.8 V 3.6 D1 D2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 8 D2 7 S2

RD1-125BAG1A

Abstract: RTL8201CL SMD a7 Transistor smd transistor J3 smd transistor a4 W3150A a6 smd transistor AVDD33 smd transistor A7 smd transistor A8
Contextual Info: 5 4 D 21 20 19 18 17 16 15 14 11 10 9 8 7 6 5 D0 D1 D2 D3 D4 D5 D6 D7 /INT /W R /RD / CS C A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11/MISO A12/MOSI A13/nSS A14/SCLK 32 31 30 29 27 26 25 24 D0 D1 D2 D3 D4 D5 D6 D7 61 62 63 64 /INT /WR /RD /CS /RESET 1 /RESET X1

TC0708

Contextual Info: Product Configuration System Crystal Oscillators - SPXO 6 TC0‐708 X1 A 4 156.2500MHZ Oscillator Package Type Frequency Range / Supply Voltage Frequency 7x5mm D1: 1.5 ~ 75.0MHz, 5.0V 1.5000~160.0000MHZ Ceramic SMD Ceramic SMD X1: 1 5 ~ 160.0MHz, 3.3V

Contextual Info: Power Inductor SMD TYPE SHD115 TYPE FEATURES APPLICATIONS Tolerance of inductance 10~470uH 20% Low profile: 5.0mm Suitable for SMD automachine & reflow soldering Suitable for the large current application 00 15 -1 SH D1 31 00 Notebook computers & PDAs Battery powered equipment

XTAL 25MHz

Abstract: osc xtal 25MHZ SMD3528 1J630 HDR1X2 SMD7343 HDR 1X2 SMD1808-A1 SMD-7343 X-TAL 25MHz
Contextual Info: DP83848 AspenPHY MAU ENDURO 870012627-100 Revision: D1 Bill Of Materials Revised: Wednesday, Aug 22, 2005 Item 1 2 3 4 Part 33uF 33pF 10uF 0.1uF PCB Footprint SMD7343 SMD0805-A1 SMD7343 SMD0603-A1 68uF 33uF 10uF TANT 1500pF LTM673 LED LTM673_1 CON-MII-MALE

Contextual Info: SO D1 23F BAS116H Low leakage switching diode Rev. 3 — 31 May 2011 Product data sheet 1. Product profile 1.1 General description Low leakage switching diode, encapsulated in a SOD123F small and flat lead Surface-Mounted Device SMD plastic package. 1.2 Features and benefits