D09G60C Search Results
D09G60C Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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SMD diode f9
Abstract: D09G60C IDD09SG60C JESD22 SMD F9
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IDD09SG60C 20mA2) SMD diode f9 D09G60C IDD09SG60C JESD22 SMD F9 | |
IDH09SG60C
Abstract: JESD22 D09G60C
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IDH09SG60C 20mA2) IDH09SG60C JESD22 D09G60C | |
Contextual Info: IDD09SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 15 nC • Temperature independent switching behavior IF; TC< 130 °C |
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IDD09SG60C 20mA2) | |
SMD diode f9
Abstract: D09G60C
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Original |
IDD09SG60C 20mA2) PG-TO252-3 D09G60C SMD diode f9 D09G60C | |
SMD diode f9
Abstract: smd diode marking UJ D09G60C IDD09SG60C JESD22
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Original |
IDD09SG60C 20mA2) SMD diode f9 smd diode marking UJ D09G60C IDD09SG60C JESD22 | |
Contextual Info: IDD09SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • Temperature independent switching behavior |
Original |
IDD09SG60C 20mA2) | |
Contextual Info: IDH09SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 15 nC • Temperature independent switching behavior IF; TC< 130 °C |
Original |
IDH09SG60C 20mA2) | |
Contextual Info: IDH09SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 15 nC • Temperature independent switching behavior IF; TC< 130 °C |
Original |
IDH09SG60C 20mA2) PG-TO220-2 D09G60C | |
SMD diode f9Contextual Info: IDD09SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • Temperature independent switching behavior |
Original |
IDD09SG60C 20mA2) IDD09SG60C PG-TO252-3 D09G60C SMD diode f9 | |
Contextual Info: IDH09SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • Temperature independent switching behavior |
Original |
IDH09SG60C 20mA2) PG-TO220-2 D09G60C | |
Contextual Info: IDH09SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • Temperature independent switching behavior |
Original |
IDH09SG60C 20mA2) PG-TO220-2 D09G60C |