D03S60C Search Results

D03S60C

Abstract: PG-TO220-2-2 IDT03S60C JESD22
Contextual Info: IDT03S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • No reverse recovery/ no forward recovery • Temperature independent switching behavior Product Summary V DC 600 V Qc 5 nC IF 3 A • High surge current capability

IDV03S60C

Abstract: Infineon power diffusion process Schottky diode TO220 JESD22
Contextual Info: SiC Silicon Carbide Diode 2nd Generation thinQ! 2nd Generation thinQ!™ SiC Schottky Diode IDV03S60C Data Sheet Rev. 2.1, 2010-02-16 Final Industrial & Multimarket 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV03S60C Description The second generation of Infineon SiC Schottky diodes has emerged over the

Contextual Info: IDT03S60C 2nd Generation thinQ! SiC Schottky Diode Features Product Summary V DC 600 V • Switching behavior benchmark Qc 5 nC • No reverse recovery/ No forward recovery I F @ T C < 140°C 3 A • Temperature independent switching behavior I F @ T C < 100°C

Contextual Info: SiC Silicon Carbide Diode 2nd Generation thinQ! 2nd Generation thinQ!™ SiC Schottky Diode IDV03S60C Data Sheet Rev. 2.1, 2010-02-16 Final Industrial & Multimarket 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV03S60C Description The second generation of Infineon SiC Schottky diodes has emerged over the