D022S3G Search Results
D022S3G Datasheets Context Search
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 42.5 dBm at 6.4 GHz to 7.2 GHz |
OCR Scan |
TIM6472-16L MW50930196 D022S3G |