Silicon Point Contact Mixer Diodes
Abstract: ka-band mixer Silicon Detector Diodes Silicon Point Contact Diode
Text: ALPHA IN»/ SEMICONDUCTOR 4ÛE D 05Û54M3 D0011S0 ÔTÏ ALP Silicon Schottky Barrier Detector Diodes To-jol Features Low 1/f Noise Bonded Junctions for Reliability Planar Passivated Beam-Lead and Chip Construction Description Alpha packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in Ka-band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process
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D0011S0
Silicon Point Contact Mixer Diodes
ka-band mixer
Silicon Detector Diodes
Silicon Point Contact Diode
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