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D 20 10
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Gedore Torque
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SOCKET 1/4"" 10 MM |
Original |
PDF
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6.54MB |
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D2010
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Pixim
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Pixim D2000 Video Imaging System for Advanced CCTV Cameras |
Original |
PDF
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135.59KB |
2 |
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D2010
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Semelab
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METAL GATE RF SILICON FET |
Original |
PDF
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15.11KB |
2 |
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D2010
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Unknown
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Shortform Semicon, Diode, and SCR Datasheets |
Short Form |
PDF
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134.72KB |
1 |
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D2010
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Unknown
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Semiconductor Devices, Diode, and SCR Datasheet Catalog |
Scan |
PDF
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61.19KB |
1 |
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D2010UK
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Semelab
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Metal Gate RF Silicon FET |
Original |
PDF
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15.11KB |
2 |
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D2010UK
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Semelab
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GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 28V - 1GHz SINGLE ENDED |
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PDF
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20.56KB |
2 |
MBRD20100
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Shikues Semiconductor
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40-200V, 20.0A, high current, low forward voltage, high efficiency, surge capability, high temp soldering, any mounting. |
Original |
PDF
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MBRD20100
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SUNMATE electronic Co., LTD
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Schottky barrier rectifier diodes with 20A average forward current, 40 to 200V reverse voltage range, low forward voltage drop, high surge capability, and operating junction temperature from -55 to +150°C in a TO-252 package. |
Original |
PDF
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CESD2010LC2V5B
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CREATEK Microelectronics
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Ultra low capacitance ESD/TVS array in DFN2010 package, CESD2010LC2V5B, designed for high-speed data line protection with 2.5V reverse stand-off voltage, 0.8pF typical I/O to I/O capacitance, and 10A peak pulse current handling. |
Original |
PDF
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SBD20100TCTB
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JCET Group
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SBD20100TCTB and SBDF20100TCTB are Schottky barrier rectifiers with 100 V DC blocking voltage, 20 A average rectified output current, 150 A non-repetitive surge current, low forward voltage drop of 0.62 V at 125°C, and operating junction temperature up to 150°C. |
Original |
PDF
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CESD2010UC5VB
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CREATEK Microelectronics
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Ultra low capacitance ESD/TVS array in DFN2010 package, rated for 75W peak pulse power, 5V reverse stand-off voltage, 0.2pF typical junction capacitance, and 3A peak pulse current, designed for high-speed data line protection. |
Original |
PDF
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MBRD20100CT
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JCET Group
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Schottky barrier rectifier MBRD20100CT in TO-252-2L package, featuring 100V reverse voltage, 20A average rectified current, low forward voltage drop of 1.2V at 20A, high surge capability, and suited for high-frequency inverters and polarity protection applications. |
Original |
PDF
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CESD2010LC2V8B
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CREATEK Microelectronics
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Ultra low capacitance ESD/TVS array in DFN2010 package, CESD2010LC2V8B, designed for high-speed data line protection with 2.8V reverse stand-off voltage, 0.8pF typical I/O to I/O capacitance, and 10A peak pulse current handling. |
Original |
PDF
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CESD2010LC3V3BH
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CREATEK Microelectronics
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Ultra low capacitance ESD/TVS array in DFN2010 package, CESD2010LC3V3BH, designed for high-speed data lines with 3.3V reverse stand-off voltage, 0.8pF typical I/O to I/O capacitance, and 100W peak pulse power rating. |
Original |
PDF
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SBD20100CT
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JCET Group
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SBD20100CT and SBDF20100CT Schottky barrier rectifiers feature 100 V reverse voltage, 20 A average rectified current, low forward voltage drop of 0.68 V at 125°C, and 150 A non-repetitive surge current in a TO-220 package. |
Original |
PDF
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SBDD20100CT
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JCET Group
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Schottky barrier rectifier SBDD20100CT with 100V peak repetitive reverse voltage, 20A average rectified output current, low forward voltage drop of 0.68V at 125°C, and 150A non-repetitive surge current capability in TO-252-2L package. |
Original |
PDF
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CESD2010UC2V5BS
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CREATEK Microelectronics
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Ultra low capacitance ESD/TVS array in DFN2010 package, CESD2010UC2V5BS, designed for protecting two bidirectional I/O lines with 0.5 pF typical capacitance, 2.5 V reverse stand-off voltage, and 50 W peak pulse power rating. |
Original |
PDF
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CESD2010UC5VU
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CREATEK Microelectronics
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Ultra low capacitance ESD/TVS array in DFN2010 package, CESD2010UC5VU, designed for high-speed data line protection with 30W peak pulse power, 5V reverse stand-off voltage, and 0.15pF typical I/O to I/O capacitance. |
Original |
PDF
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CESD2010LC3V3B
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CREATEK Microelectronics
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Ultra low capacitance ESD/TVS array in DFN2010 package, CESD2010LC3V3B, features 0.8 pF typical I/O to I/O capacitance, 3.3 V reverse stand-off voltage, and 200 W peak pulse power for high-speed data line protection. |
Original |
PDF
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