D MARKING PNP Search Results

telefun

Abstract: transistor Bf 979 BF979
Contextual Info: BF 979 TELEFUNKEN Semiconductors Silicon PNP RF Transistor Applications UHF/VHF uncontrolled prestages with low noise and low modulation Features D High cross modulation performance D High power gain D Low noise D High reverse attenuation 3 2 1 BF979 Marking

BF979

Abstract: Telefunken telefunken transistor
Contextual Info: BF979 Silicon PNP RF Transistor Applications UHF/VHF uncontrolled prestages with low noise and low modulation Features D High cross modulation performance D High power gain D Low noise D High reverse attenuation 3 2 94 9308 1 BF979 Marking: BF979 Plastic case TO 50

BF970

Abstract: 85005 500WF
Contextual Info: BF970 Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF oscillator and mixer stages. Features D High gain D Low noise 3 2 94 9308 13623 1 BF970 Marking: BF970 Plastic case TO 50

BF970

Abstract: BF970 transistor
Contextual Info: BF970 Vishay Semiconductors Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF oscillator and mixer stages. Features D High gain D Low noise 3 2 94 9308 13623 1 BF970 Marking: BF970 Plastic case TO 50

Contextual Info: BF970 Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF oscillator and mixer stages. Features D High gain D Low noise 3 2 94 9308 13623 1 BF970 Marking: BF970 Plastic case TO 50

bf970

Abstract: telefunken transistor marking zg
Contextual Info: BF970 Silicon PNP RF Transistor Applications UHF oscillator and mixer stages. Features D High gain D Low noise 3 2 94 9308 1 BF970 Marking: BF970 Plastic case TO 50 1= Collector; 2= Base; 3= Emitter Absolute Maximum Ratings Parameters Collector-base voltage

BF569

Abstract: BF569R
Contextual Info: BF569/BF569R Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For selfoscillating RF mixer stages. Features D High gain D Low noise 1 1 13 581 13 581 94 9280 2 9510527 3 3 BF569 Marking: LH

s869t

Abstract: S869TR CASESOT-23 marking A1 TRANSISTOR Telefunken
Contextual Info: S869T/S869TR Silicon PNP Planar RF Transistor Applications Self-oscillating ultrahigh frequency mixer stages Features D High blocking voltages D Transition frequency: fT = 1 GHz 1 2 1 3 3 94 9280 S869T Marking: 869 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter

BF569

Abstract: BF569R
Contextual Info: BF569/BF569R Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For selfoscillating RF mixer stages. Features D High gain D Low noise 1 1 13 581 13 581 94 9280 2 9510527 3 3 BF569 Marking: LH

BF970

Abstract: 13623
Contextual Info: BF970 Silicon PNP RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF oscillator and mixer stages. Features D High gain D Low noise 3 2 94 9308 13623 1 BF970 Marking: BF970 Plastic case TO 50 1= Collector; 2= Base; 3= Emitter

transistor marking zg

Abstract: BF579 BF579R HF transistor
Contextual Info: BF 579 / BF 579 R TELEFUNKEN Semiconductors Silicon PNP Planar HF Transistor Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features D High transition frequency D Low disortation 1 2 1 3 3 2 94 9280 BF579 Marking Plastic case SOT 23

telefunken ta 750

Abstract: S416T smd marking l5 MARKING GA smd transistor marking L5 smd transistor marking ga transistor smd 49 transistor smd marking cu 23marking
Contextual Info: S 416 T TELEFUNKEN Semiconductors Silicon PNP planar RF transistor Applications Oscillator in VHF tuner. Features D Especially suitable for VHF oscillators D SMD package Dimensions in mm Case 23 A 3 DIN 41 869 SOT 23 Marking: GA Weight max. 0.01 g Absolute Maximum Ratings

S869T

Abstract: S869TR 1s869
Contextual Info: S 869 T / S 869 T R TELEFUNKEN Semiconductors Silicon PNP Planar RF Transistor Applications Self-oscillating ultrahigh frequency mixer stages Features D High blocking voltages D Transition frequency: fT = 1 GHz 1 2 1 3 3 2 94 9280 S869T Marking: 869T Plastic case SOT 23

marking GG

Abstract: BF579 BF579R Low Noise uhf transistor marking A1 TRANSISTOR
Contextual Info: BF579/BF579R Silicon PNP Planar HF Transistor Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features D High transition frequency D Low disortation 1 2 1 3 3 94 9280 BF579 Marking: G7 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter

BF550R

Abstract: BF550 marking A1 TRANSISTOR marking LA
Contextual Info: BF550/BF550R Silicon PNP HF Transistor Applications RF-IF amplifier specially for thick and thin film circuits. Features D High power gain D Low noise figure 1 2 1 3 3 94 9280 BF550 Marking: LA Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter 2 95 10527

Contextual Info: 3SE D • 023fc>3EQ G D l? n 3 T I SIP PZT 3904 NPN Silicon Switching Transistor SIEMENS/ SPCLi SEMICONDS _ T - s s r - \\ • High DC current gain 0.1 to 100 mA • Low collector -emitter saturation voltage • Complementary type: PZT 3906 PNP Type Marking

BT 815 transistor

Abstract: BT 816 transistor
Contextual Info: 3EE D • ÔSBbBHQ 0017S3? 4 SMBT3906 PNP Silicon Switching Transistor SIEMENS/ SPCL-. SEMICONDS • • • ISIP r-3'7- i r High D C current gain: 0.1 to 100 mA Low collector-emitter saturation voltage Complementary type: S M B T 3904 NPN Type Marking Ordering code

KST3906 samsung

Abstract: BCW71 AG LC-1010
Contextual Info: SAMSUNG ELECTRONICS INC bOE D • TTbMlME 0011523 TTO HSriGK TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Condition Device and Polarity Marking NPN KST06(1G) KST05(1H) KSC1623(C1X) PNP

MARKING G2

Abstract: BF550 BF550R
Contextual Info: BF 550 / BF 550 R TELEFUNKEN Semiconductors Silicon PNP HF Transistor Applications RF-IF amplifier specially for thick and thin film circuits. Features D High power gain D Low noise figure 1 2 1 3 3 2 94 9280 BF550 Marking: G2 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter

Contextual Info: D T A 1 1 4 Y E D T A 1 1 4 Y U A D T A 1 1 4 Y K A Digital transistor, PNP, with 2 resistors Features Dimensions Units : mm available in EMT3 (EM3), UMT3 (UMT, SC-70), and SMT3 (SMT, SC-59)packages package marking: DTA114YE (EMT3) I j_ 0.6 1.6 1 0 .2 □

TMPT404

Contextual Info: SPRAGUE/SEM ICOND T 3 GROUP 8 5 1 4 0 1 9 SPRAGUE. SEMICONDS / IC S D • 0513050 0 D G 3 LiG7 7 ■ 93D 0 3 6 0 7 SMALL-OUTLINE BIPOLAR TRANSISTORS PNP Transistors ELECTRICAL CHARACTERISTICS at Tfl = 25°C IcBO Device Type Marking BCW29 C1 BCW30 C2 BCW61A

Contextual Info: SIEMENS SMBTA 42 NPN Silicon Transistor for High Voltages • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: SMBTA 92 PNP Type Marking Ordering Code Pin Configuration SMBTA 42 s1 D Q68000-A6482 1=B 2=E Package

2SD2045

Contextual Info: 2SD2045 NPN - PNP Plastic-Encapsulate Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free SOT-26 FEATURE 40V complementary device Mounting cost and area can be cut in half High hFE D MARKING H A

Contextual Info: UMD2N Transistor, digitai, dual, NPN IM D 2 A and Features Dimensions U nits: mm available in UMT6 (UM6) and SMT6 (IMD, SC-74) packages package marking: UMD2N and IMD2A; 02 package contains a PNP (DTA124EKA) and an NPN (DTC124EKA) digital transistor, each