D 83 - 004 Search Results

Contextual Info: I 18 0 83 067 102 091 0 83 .004 035 028 n T "ii ii i T ii tifc j .024 AT INTENSITY MI N. TYP. 10 20 MAX. mcd lr = 10 mA V lF = 10 mA 1. 7 5 PEAK WAVELENGTH 660 nm 120 DEGREES 25 pF 64 5 nm 1 / 2 - INTENSITY .020 TEST C O N D I T I O N S UNI TS FORWARD VOLTAGE

Contextual Info: 10 13 CIRCUIT SIZE 6 4 2 4 7 5 -* * ! MOUNTING EAR DESIGN "B' SEE NOTE 9 DIM. •B’ DIM. „C" DIM. "D" .54 ( I3.8) .33 (8.4) .50 (12.6) .66 (16.8) .807 (20.50) .972 (24.70) 1.138 (28.90) .945 (24.00) I.IIO (28.20) 1.276 (32.40) .83 (21.0) .99 (25.2)

sfn322

Contextual Info: 83 pftR n? ~7IQ «ctm n i t t r do kwi n Fr vVTT QQ f&5 si DE I ö3böfeiD5 DQDSOtil D inc 70C 02061 T-39-11 SWITCH MOS SFN322 POWER MOS PACKAGE TO-3 MAXIMUM RATINGS SYMBOL VDS rD *DM VGS PD lL TJ oper T stg * UNITS PARAMETER Voltage, Drain to Source 400

Contextual Info: 2 1 + * * 83 00 3 4 Series * * * Material ; * I n s u la t o r : UL 9 4 V - 0 PBT * C o n ta c t : P h o s p h o r Bronze + P la tin g : Tin p la te d 1 2 0 / / m in . o ver 3 0 ~ 5 0 y u ” nickel overall 2.540± 0.05 .lOOi.OOe ii— 3 - - ^ - - ^ —

800w power amplifier circuit diagram

Abstract: 500w power amplifier circuit diagram 800w rf power amplifier circuit diagram GE SCR Manual scr T103 SCR Phase Control IC lN4740A "electronic measurements inc" hcr 220V AC 12V DC regulated switching Fuse t5a 250v
Contextual Info: ELECTRONIC MEASUREMENTS, INC. 405 ESSEX RD., NEPTUNE, N.J. 07753 83 458-001 - FIVE YEAR WARRANTY El e c t r o n i c Me as ur em e nt s, Inc. w a r r a n t s this equipment m a n u f a c t u r e d by l i b and sold by us Dr our a u t h o r i z e d agents to a m a n u f a c t u r e r or

mc7490

Abstract: MC5490 motorola mc7490
Contextual Info: M TTL Complex Functions MOTOROLA DECADE COUNTER 'U M C 5 4 9 0 • M C 7490 M C 93 9 0 • M C 83 9 0 A d d S u ffix F f o r T O - 8 6 c e r a m ic f l a t p a ck< u j‘: S u ffix iQe ¡Case L f o r T O -1 16 d u a l in - lin e c e ra t'i'c S u f f i x P f o r T O - 1 1 6 d u a l i n - l i n e p l a s t i c \ j c: k a t o < C a s e 6 4 0 ; M C ,‘ 4 4 0 , V U ' o

X3717

Contextual Info: HARRIS SEMICOND SECTOR File Number 2356 SbE D 43G2271 004GÖ37 34T H H A S D45VH Series 7 = 3 7 ~ / 7 Silicon P-N-P Transistors Complementary to the D44VH Series Features: • Fast Switching ts < 500 ns resistive t f < 100 ns ■ Low VCEisat < 1.0V @ IC = 8A

A83A marking

Abstract: 113A db 435A 95A 640 marking 113a LTE21009R LTE21009RA transistor 81 110 w 85 MARKING 41B marking code 41b
Contextual Info: -7^33-0^ LTE21009R LT E 21009R A ,{ PHILIPS INTERNATIONAL StE D • 7110fi2b 0041,218 Rbfl ■ PHIN MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor fo r use in common-emitter class-A linear power amplifiers up to 4.2 GHz. Diffused em itter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich

Contextual Info: FS9168-015 Data Sheet FS9168 standard code for digital clinical thermometer application Rev. 1.0 Jan. 2005 Fortune Semiconductor Corp. FS9168-015-DS-10_EN CR-004 FS9168-015 Taipei Office： 28F, No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan

SK 863

Abstract: ff-009-p4x8b
Contextual Info: FIGURE 1 .34 8.6 REF. "B” PANEL -* THICKNESS ». H A REF. FF-001B .79 (20) RM S-76 FF-004B .71 (18) FF-003-P3x5.5B RM S-42 .53 (13.5) FF-005-P4x5B FF-005-P4x6B .79 FF-005-P4x7B (20) FF-005-P4x8B FF-006-P4x6B FF-006-P4x7B .55 FF-006-P4x8B (14) FF-006-P5x6.5B

19085-0005

Abstract: 19294-0001 molex 19019-0044 19285-0052
Contextual Info: m olex NCW PAKT if HAND TOOL # CRIMPING PRESS Dit # PAGI # HCW PART # HAHD TOOL * CRIMPING PRCSS D/f # 11-31 6356 19001-0001 19001-0002 19001-0003 19001-0005 19001-0006 19001-0007 N/A 19285-0042 N/A 19285-0042 N/A 19285-0042 N/A 19285-0042 N/A 19285-0045 N/A

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. D RELEASED FOR PUBLICATION BY AMP INCORPORATED. COPYRIGHT 19 6 5 4 3 2 ,19 LOC ALL RIGHTS RESERVED. DIST REVISIONS 47 AD P LTR F HOUSING. LIQUID CONT A C T S . GROUND D HIGH BUSSES. CONT A C T S E CONTACT PHOSPHOR 0 . 0044S]

DV2840S

Abstract: 0Q004
Contextual Info: 5642205 M/A-COM P H I DV2840S INC ^ 85D 00450 SL422DS □G0045Q D 3 * - / '4 2 N-Channel Enhancement - Mode RF Power FETs 175 MHz 2 0 -3 5 V 40 W 10 dB HF/VHF Amplifiers Class A, B or C High Dynamic Range Amp. Package Type S FEATURES • 20:1 VSWR ■ No Thermal Runaway

Contextual Info: Schottky-Barrier Diodes Dual package Ratings and characteristics Maximum rating Vrrm lo *1 TS802C06 TS802C09 TP802C04 TP802C06 TP802C09 ESAC82-004 ESAC82M-004 O II CO ^1 5.0 Mass Grams Fig. No. Irrm * 3 Max. mA Dimensions -40 t o +125 0.55 If=2.5A 5.0 0.6

Contextual Info: \ DWG. NO. DO NOT SCALE DRAWING SD-59370-004 feB4NO. DRWN: CH'K: APPR: CD feB3NO. DRWN: CH'K: APPR: feB2NO. DRWN: CH'K: APPR: feBINO. DRWN: CH'K: APPR:_ RELEASED L bono. J C 2 0 0 0 - 0 5 5 0 D R W N :T .Y A S U I '00/2/22 CH'K: T .Y A M A G U C H 1

Arco 262 capacitor

Abstract: arco 462 TRIMMER capacitor arco capacitors 462 transistor 1005 oj arco TRIMMER capacitor 262 arco 468 arco capacitors 262 Arco 426 trimmer arco TRIMMER capacitor 463 arco TRIMMER capacitor
Contextual Info: 5642205 M / A - C O M P H I INC 85D 00418 D T - 31 ~ of DV42Q5S n/A-con p h i as inc de | s m e e o s n-channel enhancement-moae RF Power FETs designed for. HF/VHF Amplifiers Class A, B, or C High Dynamic Range Amp Benefits ooGoma t | 175mhz 6"25yJ 10dB

Contextual Info: V \ CD DO NOT S CAL E DRAWING DWG. NO. SD -54867-004 o feB4NO. DRWN: CH'K: CD DO m APPRs o o fel33NO. DRWN: CH'K: O APPR: CD i t m Tl p feB2N0. DRWN: s CD CH'K: APPR: feBINO. DRWN: CH'K: APPR: RELEASED feB NO. JD 2 0 0 1-0339 drwn: S.H0SH1KAWA '00/09/84 CH'K:

Contextual Info: 2i3 iJ i PRODUCT NR: 70296-001 70296-002 70296-003 70296-004 70296-005 70296-006 70296-007 |! PCB SIZE MAX. 3.25 2.45 1.65 4.05 4.85 5.65 2.05 DIM A 19.00 18.20 17.40 19.80 20.60 21.40 17.80 DIM B 5.05 4.25 3.45 5.85 6.65 7.45 3.85 : DIM C 12.00 1 1.20 10.40

26166

Abstract: BA223 AM band switching diode diode D 07-15 15
Contextual Info: SbE T> 71100Sb m 00400*13 333 • P H I N BA223 T-D7-! S' PHILIPS INTERNATIONAL SbE ]> T O SILICON A.M. BAND SWITCHING DIODE The B A 223 is a switching diode in whiskerless glass encapsulation. It is intended fo r band switching in a.m. radio receivers. Q U IC K R E F E R E N C E D A T A

Contextual Info: DWG. NO. SD-54030-004 DO NOT S C A L E DRAWING kB4NO. DRWN: CH'K: APPR: 2.3 F i.9 " fel33NO. DRWN: CH'K: APPR: feB2N0. DRWN: CH'K: APPR: feBINO. DRWN: CH'K: APPR: PROPOSED '00/1/20 feBONO. J C 2 0 0 0 - 0 4 8 7 drw ni T .A S A K A W A CH'K: T .Y A M A G U C H I

1N4723

Contextual Info: ~ 6 TÏ5 95 0 M ICROSEM I CORP/POWER 02Ë 00484 DS D E |b l l S T S O ODDOMfiM S | p jQ gß2 PTC 864 PTC 866 Power Technology Components . HIGH VOLTAGE FAST RECOVERY POWER RECTIFIERS 40 AMPERES 200-600 VOLTS JEDEC Reverse Recovery Circuit L1 Tt 120 VA< 60 Hz

940-004, 941-004 and 942-004

Contextual Info: Sav-Con connector savers MIL-DTL-38999 Series II 940-004, 941-004 and 942-004 Bayonet Coupling 940-004 GENERAL DUTY, 941-004 ENVIRONMENTAL AND 942-004 HIGH RELIABILITY How To Order Sample Part Number B 94 Series 94 Class 0 = General Duty 1 = Environmental

BF484

Abstract: BF486 BF488
Contextual Info: BF484 BF486 BF488 J . PHILIPS INTERNATIONAL 5bE D I 711002b 0042174 147 invideo PHIN T-31-Z3 SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistors in a TO -92 envelope and intended fo r use white and colour television receivers. • o utpu t stages o f biaok and

M30624FGAFP

Abstract: M30833FJFP M32C USART code examples
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog