D 772 TRANSISTOR Search Results

Contextual Info: 32E D • Ö2 3L.3SQ Q 0 1 b 7 7 7 «S IP NPN silicon RF Transistor _ S I E M E N S / SPCL-i B F 772 SEMICONDS • For low noise, high gain amplifiers up to 2GHz • For linear broadband amplifiers • For modulators and amplifiers in VCR-tuners Type

R2j diode

Abstract: transistor bul 39 LM117L LM140L LM78LXX LM340LA-5 LM340LAH12 LM340LA12 lm340laz-12
Contextual Info: b501124 D0?fc.37b 772 • N S C 2 LM140L/LM340L 5fiE D National m M Semiconductor NATL SEUICOND LINEAR T - 5 S - U 'l3 LM140L/LM340L Series 3-Terminal Positive Regulators General Description The LM140L series of three terminal positive regulators is available with several fixed output voltages making them

H8S/2240

Abstract: p-qfp100-14x14-0.50 2240 TIMER C LANGUAGE H8S/2241 HITACHI microcontroller H8S family HD6432246 HD6472246 free transistor equivalent book TRANSISTOR 707
Contextual Info: REJ09B0355-0300 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. H8S/2245 Group 16 Hardware Manual

d 772 transistor

Abstract: EE-SX870 772 pnp EE CORES EE-SX772A EE-SX771 ee-sx871 TRANSISTOR b 772 p EE-SX770A K 872
Contextual Info:
EE-SX770/771/772/870/871/872 A/P/R Thin, Compact Photomicrosensor with Attached Cable
Next generation design available with NPN or PNP output
Allows standard M3-screw mounting
Twenty-four models available in standard, L-shaped, and T-shaped
UL, EMC and CE approvals

2SD1397

Abstract: 800VDC
Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SD1397 Features • • With TO-3PN package Horizontal deflection output driver NPN Silicon Power Transistors Maximum Ratings Symbol V CEO

b02a

Abstract: TRANSISTOR b 772 p 772 p sot223
Contextual Info: PZT772 PNP Silicon Epitaxial Transistor COLLECTOR 2, 4 P b Lead Pb -Free 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR BASE 1 2 3 SOT-223 3 EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating 1 Symbol Value Unit Collector to Base Voltage VCBO -40 V Collector to Emitter Voltage

Contextual Info: BCP772 -3 A, -40 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-89 The BCP772 is designed for using in output stage of amplifier, voltage regulator, DC-DC converter and relay driver.

SZD772

Contextual Info: SZD772 PNP Epitaxial Planar Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen-free TO-251 DESCRIPTION The SZD772 is signed for using in output stage of 10W amplifier, voltage regulator, DC-DC converter and relay driver.

TRANSISTOR b 772 p

Contextual Info: SIEMENS BCR 503 NPN Silicon Digital Transistor * Switching circuit, inverter, interface circuit, drive circuit » Built in bias resistor R1=2.2kiî, R2=2.2k£î XAs Q62702-C2370 1= B Package II CO BCR 503 Pin Configuration O Marking Ordering Code LU II CM

TO-251 Outline

Abstract: WTP772 marking ASE
Contextual Info: WTP772 PNP Epitaxial Planar Transistors P b Lead Pb -Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 TO-251 ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) Rating Symbol Collector-Emitter Voltage Collector-B ase Voltage Emitter-B ase Voltage Collector Current (DC) VCEO VCB O

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components HDWXUHV • • MJ431  10 Amp NPN Silicon Power Transistors 125W Collector-Emitter Voltage: VCEX=400V Min)

43G2E71

Abstract: 4410b 2N6044 2N6045
Contextual Info: MARRIS SEMICOND SECTOR SbE T> m 2N6043, 2N6044, 2N6045 43G2E71 GOMOMTl 772 • HAS 7 = 3 '5 File Number 1151 TERMINAL DESIGNATIONS 8-Ampere N-P-N Darlington Power Transistors 60-, 80-, 100-Volts, 75 Watts Gain of 1000 at 4 A 2N6043,2N6044 Gain of 1000 at 3 A (2N6045)

BCW89

Abstract: BS7 marking
Contextual Info: L BCW89 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors Marking BCW89 = H3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 0.60 0.40 _t.02_ 0.89 2.00 1.80 ABSOLUTE MAXIMUM RATINGS

Contextual Info: PN4391 to 4393 yv N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. QUICK REFERENCE DATA Drain-source voltage

Contextual Info: N AMER PHILIPS/DISCRETE b=JE D bbS3T31 OGSfllHD 7D7 I IAPX 2N3904 SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a plastic TO-92 envelope, primarily intended for high-speed, saturated switching applications fo r industrial service. PNP complement is 2N3906.

2sk88

Abstract: 2SK881 1030Y 2sk8
Contextual Info: TOSHIBA 2SK881 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK881 Unit in mm FM TUNER APPLICATIONS. VHF BAND AM PLIFIER APPLICATIONS. 2.1 ± 0.1 1.25±0.1 990 ' 990 • oo Low Noise Figure : NF = 2.5dB Typ. (f=100MHz) High Forward Transfer Admittance

Contextual Info: 3SE D • 023fc>3EQ G D l? n 3 T I SIP PZT 3904 NPN Silicon Switching Transistor SIEMENS/ SPCLi SEMICONDS _ T - s s r - \\ • High DC current gain 0.1 to 100 mA • Low collector -emitter saturation voltage • Complementary type: PZT 3906 PNP Type Marking

Contextual Info: P h ilip s S em iconductors M ^53*131 00317S3 bflO >| NPN 1 GHz video transistors BFQ236; BFQ236A N AMER PHILIPS/DISCRETE FEATURES b'lE ]> PINNING • High breakdown voltages PIN • Low output capacitance 1 • High gain bandwidth product 2 base • Good thermal stability

LXT312NE

Abstract: Schott B3 LXT312 LXT312PE LXT315 LXT315NE LXT315PE sinusoidal pulse width modulation technique white noise generator
Contextual Info: DATA SHEET SEPTEMBER, 1997 Revision 2.2 LXT312 / LXT315 Low Power T1 PCM Repeaters / Transceivers General Description Features The LXT312 and LXT315 are integrated repeater/transceiver circuits for T1 carrier systems. The LXT312 is a dual repeater/transceiver and the LXT315 is a single repeater/

MP1613

Abstract: MPT613 adc 515 pnp germanium low power transistor 100-C Germanium power
Contextual Info: MP1613 GERMANIUM S T Y L E 1: PIN I. B A S E 2. E M IT T E R C A S E: C O L L E C T O R Medium-current germanium PNP power transistor, designed for use in 12 Volt: vertical deflection circuits in television receivers; features: high breakdown voltage, low leakage current, and low saturation volt­

lN914

Abstract: TIP29 TIP29A TIP29B TIP29C TIP30
Contextual Info: TIP 29 Series NPN POWER TRANSISTORS 40-100 VOLTS 1 AMP, 30 WATTS COMPLEMENTARY TO THE TIP30 SERIES The T IP 29 Series pow er transistors are designed for use in general purpose am plifier and switching applications. Features: • Designed for complementary use with TIP 30 series

transistor D 4515

Abstract: PJ 1179 D 4515 ST2000 4463 SL71Y STE2001 701023 Pj 1189 1 928 403 226
Contextual Info: Solutions for Sales Offices 69050-002 Manaus/AM Costantino Nery Street, 2789 80 Stair - 806 Room Chapada Tel. +55 92 657 0017 Fax +55 92 657 0157 COLORADO Longmont Tel. +303 772 9729 Fax +303 381 3680 CONNECTICUT Woodstock Tel. +860 928 7700 Fax +860 928 2722

sinusoidal pulse width modulation technique

Abstract: Schott B3 LXT312 LXT312A LXT312NE LXT312PE LXT315NE LXT315PE
Contextual Info: LXT312A/LXT315A Low Power T1 PCM Repeaters/Transceivers Datasheet This data sheet also applies to the LXT312/LXT315 products. The LXT312A and LXT315A are integrated repeater/transceiver circuits for T1 carrier systems. The LXT312A is a dual repeater/transceiver and the LXT315A is a single repeater/transceiver.

LXT312

Abstract: LXT312A LXT312NE LXT312PE LXT315NE LXT315PE
Contextual Info: DATA SHEET NOVEMBER 1999 Revision 1.0 LXT312A/LXT315A Low Power T1 PCM Repeaters/Transceivers General Description Features This data sheet also applies to the LXT312/LXT315 products. The LXT312A and LXT315A are integrated repeater/ transceiver circuits for T1 carrier systems. The LXT312A