D 650 S14 Search Results

Contextual Info: SiHA15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.28 76 Qgs (nC) 11 Qgd (nC) 17 Configuration Single D APPLICATIONS

Contextual Info: SiHF15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.28 78 Qgs (nC) 9 Qgd (nC) 17 Configuration Single APPLICATIONS D

Contextual Info: SiHG23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.158 95 Qgs (nC) 16 Qgd (nC) 25 Configuration Single D APPLICATIONS

Contextual Info: SiHB33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C (Ω) • • • • • • 650 VGS = 10 V 0.099 Qg (Max.) (nC) 150 Qgs (nC) 24 Qgd (nC) 42 Configuration Single D APPLICATIONS

Contextual Info: SiHP30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.125 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single D APPLICATIONS

Contextual Info: SiHA15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.28 76 Qgs (nC) 11 Qgd (nC) 17 Configuration Single D APPLICATIONS

VARISTOR S10k275

Abstract: S10K275 S14K250 S10K250 S20K175 siemens S14K250 S10K130 S20K130 S20K250 S10K115
Contextual Info: SIEMENS AKTIENGESELLSCHAF LOE D Electrical Specifications, cont. Disc Types • A235bG5 D 0 S 1 4 U BSD « S I E C C haracteristics 25 C Maxim um Ratings (85°C) C ontinuous Part N umber S05K75 S07K75 S10K75 S14K75 S20K75 S05K95 S07K95 S10K95 S14K95 S20K95

s20k320

Abstract: S14K250 SIOV-S14K275 S14K420 SIOV-S14K385 SIOV-S20K50 SIOV-S10K300 S14K510 s07k17 S14K300
Contextual Info: Scheiben-Varistoren, S Standard Aufbau ● Runder Varistorkörper ● Umhüllung: Epoxidharz, schwer entflammbar nach UL 94 V-0 ● Anschlüsse: Kupferdraht, verzinnt Eigenschaften/Neuheiten ● Neue Hochenergie-Varistoren S14/S20 … E2 ● PSpice-Modelle

S14K320

Abstract: siemens RWF S14K420 varistor s20 k320 510k14 S20K320 S20K230 SIOV-S14K275 s14 k320 S14K460
Contextual Info: Disk Varistors, S Standard Construction • Round varistor element • Coating: epoxy resin, flame-retardant to UL 94 V-0 • Terminals: tinned copper wire New features • New high-energy varistors S14/S20 . E2 • PSpice models Approvals • • • •

S4112

Abstract: S25920
Contextual Info: Other Types of Si Photodiode S i P h o t o d i o d e s W it h P r e - a m p lif ie r Atfive Area TyceNo F oas SSRStMfy Waueiength Spectral Response Rango X dm rnm) 190 to 1100 S1406-04 320 to 1100 2.4x2.4 S 1406-06 SSS80 960 «2.54 320 to 1060 920 High-speed response

S144

Abstract: Siltronics
Contextual Info: Û r 'K 006687 — tír K i- Delta S144 PROGRAMMABLE TRIPLE OPERATIONAL AMPLIFIER Sheet FEATURES APPLICATIONS - Medical - Battery Powered - Active - State-Variable Su- Electronics - Progr a m m a b l e for Supply Current Gain-Bandwidth - Micropower Operation

Contextual Info: Si Photodiodes with Pre-amp Type No. Active Area Feature mm S1406 Series 2.4 X S5590 2.4 X S5591 5.8 X Uses a photodiode chip of the S1226 or S1336 series and a borosilicate glass or quartz glass 2.4 window. Low noise operation suitable for precision measurement at low-light-level.

transistor buz 10

Abstract: wo3 TRANSISTOR KDS -5a DIODE BUZ 537 KDS 38 BUZ 271 BUZ271 C67078-S1453-A2 DIODE BUZ BUZ-271
Contextual Info: SIEMENS £2^ - ^ 3 SIPMOS Power Transistor BUZ 271 • P channel • Enhancement mode • Avalanche rated Type Vds Io •^DS on Package 1> Ordering Code BUZ 271 -5 0 V -2 2 A 0.15 Q. TO-220 AB C67078-S1453-A2 Maximum Ratings Parameter Symbol Continuous drain current, Tc 38 2 6 *C

DIODE BUZ 537

Abstract: C67078-S1453-A2 BUZ271
Contextual Info: SIPMOS Power Transistor BUZ 271 ● P channel ● Enhancement mode ● Avalanche rated Type VDS ID RDS on Package 1) Ordering Code BUZ 271 – 50 V – 22 A 0.15 Ω TO-220 AB C67078-S1453-A2 Maximum Ratings Parameter Symbol Values Continuous drain current, TC = 26 ˚C

GP 809 DIODE

Abstract: BUZ,271
Contextual Info: SIEMENS BUZ 271 SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Type BU Z 271 Vos -50 V b -22 A flbsion Package Ordering Code 0.15 n TO-220 A B C67078-S1453-A2 Maximum Ratings Parameter Symbol Continuous drain current Values

SIOV-S18K150

Abstract: Q69X3139 SIOV-S10K95 Q69X3038 SIOV-S20K140 Q69X3120 Q69-X3227 Q69X3121 SIOV-S14K95 Q69X3229
Contextual Info: Disk Varistors Maximum ratings T'a = 85 C Type Ordering code Surge current Energy absorption Power dissipation ^D C V ia x W m ax p 1 m ax V V 8/20 (.is (2 ms) J A Opera ing voltag< ^R M S W SIOV-S05K95 SIOV-S07K95 SIOV-S07S95AGS2 1) SIOV-S10K95 SIOV-S14K95

transistor buz 36

Abstract: BUZ271
Contextual Info: BUZ 271 SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 271 -50 V -22 A 0.15 Ω TO-220 AB C67078-S1453-A2 Maximum Ratings Parameter Symbol Continuous drain current

hJST

Abstract: B12B-CZHK-B-1
Contextual Info: IDC 1.5mm CZ FAMILY SERIES/CZ.CZW.TZ.TZW Disconnectable Insulation displacement connectors .059" pitch Features –––––––––––––––––––––––– CZ connector • Distortion resistant construction The header is fully shrouded and thus protects the receptacle

hJST

Abstract: B07B-CZHK-B-1 S17B-CZHK-B-1 hJST32 "h jst" connector 03CZ B04B-CZHK S03B-CZHK-B-1 UL10272 BU26P-TZW-S
Contextual Info: IDC 1.5mm CZ FAMILY SERIES/CZ.CZW.TZ.TZW Disconnectable Insulation displacement connectors .059" pitch Features –––––––––––––––––––––––– CZ connector • Distortion resistant construction The header is fully shrouded and thus protects the receptacle

LC RESONATOR 455kHz

Abstract: 455KHZ CM2915 RLCD5
Contextual Info: CM2915 LCD Driver 19*4 with Key Scan (4*8) . General Description: 此 IC 是針對 VCD/DVD LCD 面板而設計，CM2221整合 LCD driver 功能，並精簡 CM2221 的應用線路，達到成本降低的目標，希望讓客戶的產品更有競爭力。

varistor* s20

Abstract: ECG1V020 varistor S20 mov s20 ECG2V025 ECG4902 ECG4990 S201 ECG4934 S20 Metal Varistor
Contextual Info: Overvoltage Transient Suppressors Metal Oxide Varistors MOV Maximum Voltage ECG Type RMS VACM (Volts) DC V dcm (Volts) Clamping VCL (Volts) Nominal Varistor Voltage V nom Volts Energy W tm (Joules) Peak Current Itm (Amps) Transient Power Dissipation Pd (Watts)

epcos 800 256

Abstract: S10K300E2 S14K275E2 S20K460 S10K275E2 SIOV-S07K320 SIOV-S07K275E2 S14K150E2 s14k385 SIOV-S14K510E2
Contextual Info: Leaded Varistors AdvanceD Series Construction • Round varistor element, leaded ■ Coating: epoxy resin, flame-retardant to UL 94 V-0 ■ Terminals: tinned copper wire Features ■ ■ ■ ■ ■ High-energy AdvanceD series E2 High surge current ratings up to 10 kA

V170R

Abstract: SO7K40 so7k SO7K250 sanken snr ERZC07DK330 varistor 420 s 14k sanken varistor SNR varistor 7k 270 ZOV Varistor
Contextual Info: VARISTORS /> S C 32 i< !K <o Style Designation: (typical Standard Marking: R6921ZOV511RA110 Where: RCoating identification, R means standard flame-retardant fluid bed epoxy. 69 Size code, 2 numbers. See Dimensions Table. 21 Lead Configuration code, 1 or 2 numbers used only for non­

ECG1V020

Abstract: ECG4990 ECG2V025 ECG4970 ECG4934 varistor S14 300 ECG4848 ECG4938 ECG4920 ECG1V014
Contextual Info: O vervoltage T ransient S u p p re sso rs M etal O xide V a risto rs MOV M axim um V o lta g e ECG T ype E C G 1V 01 0 E C G 2V 01 0 E C G 1V 01 4 E C G 2V 01 4 E C G 1V 01 5 E C G 2V 01 5 E C G 1V 01 7 E C G 2V 01 7 E C G 1V 02 0 E C G 2V 02 0 E C G 1V 025