D 368 S 12 Search Results

368D

Abstract: SC8A 610C RB420D RB421D RB425D RB441Q RB450F RB471E RB501H
Contextual Info: 205 D 368 A 669 669 205 A 368 D 610 F 205 F 610 D 610 A 368 D 610 A 368 D 610 A 1730 G <64 : 610 D 368 A 1563 < Û < C JQ LO co O O O 368 A 610 A 205 A ,3680 | S 10A 421 B 421 B 78 E 420 E 610 A <c <s CJ> w w u. <c -c o if ü k*J £ & -PI Q "rv vr1 ^ ÍK ,

Vrsm

Abstract: 368D 610C RB420D RB421D RB425D RB441Q RB450F RB471E RB501H
Contextual Info: 205 D 368 A 669 669 205 A 368 D 610 F 205 F 610 D 610 A 368 D 610 A 368 D 610 A 1730 G <64 : 610 D 368 A 1563 <Û <C JQ LO co O O O 368 A 610 A 205 A ,3680 | S 10 A 421 B 421 B 78 E 420 E 610 A <c <s CJ>w w u. <c -c o if ü k*J £ & -PI Q "rv vr1 ^ ÍK , •Ç-. ^ i

D368S

Contextual Info: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 368 S 10.14 S Elektrische Eigenschften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak forward reverse voltage

D368S

Contextual Info: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 368 S 10.14 S Elektrische Eigenschften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak forward reverse voltage

D368S

Abstract: 81-MIT
Contextual Info: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 368 S 10.14 S Elektrische Eigenschften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak forward reverse voltage

D368S

Contextual Info: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 368 S 10.14 S Elektrische Eigenschften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak forward reverse voltage

MC68hc785

Abstract: hc68hc705 mc68hc705bd7b 9948 P 181 YE 98994
Contextual Info: MC68HC705BD7B - 1 FCR4.0MC5 Fig .a- e Vdd- 5 CVD * a. V1H/V1L 7 5 1 -1 7 VJL VZH ! c. Fosc .3 .1 -.1 -.3 -.5 800 600 400 4*9 — -.4 3.2 5;3 - - r- 2 f s - 8 -.2 - f i 1 « • d . Trtse -« ■ CuS] 90B 368 2 * _ - I 368 • e. Duty i 1 1X1 - 53.1

HC367

Abstract: M74HCXXX 74HC HC368 365BY
Contextual Info: HS-CMOS" INTEGRATED CIRCUITS & b c> Ô i ’ ( M54HC367/368 M74HC367/368 P R E LIM IN A R Y D A TA HEX BUS BUFFER (3-STATE) HC367 NON-INVERTING HC368 INVERTING i6 Y DESCRIPTION Th e M 5 4/7 4 H C 3 6 7 and the M 5 4 /7 4 H C 3 6 8 are high speed C M O S H E X B U S B U F F E R (3-S TA TE )

Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C123BH6PM Microcontroller identical to LM4F210H5QR D ATA SHE E T D S -T M 4C 123BH6 P M - 1 4 6 0 2 . 2 6 4 8 S P M S 368 C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright

Westinghouse 368a

Abstract: N370MH12
Contextual Info: lilESTCOtE S E IU C O N tU C T O R S 1 “1 E D • G O D l^ Q r -a r -i? Technical Publication W ESTCODE $g SEMICONDUCTORS Issue 3 October 1985 Convertor Grade Flat-Base Thyristor Type N370M 368 amperes average: up to 1800 volts VRRm Ratings € TN370M

D 92 02 78P DIODE

Abstract: Transistors Bipolar NPN TO-3P sk9391 SK9390 SK9423 SK9418 EPAK rca 036 SK9373 V 325T
Contextual Info: THOMSON/ DISTRIBUTOR OTE D | T02ba73 0003371 b | Bipolar Transistors cont’d _ _ CHARACTERISTICS LIMIT CONDITIONS BREAKDOWN VOLTAGE Pt W Collector Current Contin­ uous •c A S K 9 368/325f N PN Si PNPSi NPN Si PNPSi N PN Si 30 ’

PPT Diode specifications

Abstract: 74AHCT Zytrex 74als power consumption
Contextual Info: hflrex ZXS4AH CT ZX 74AH C T 365/367 sæ366/368 Hex Bus-Drivers with 3-State Outputs February 1985 OBJECTIVE SPECIFICATIONS Features D escription • Function, pin-out, speed and drive com patibility w ith 54/74A L S logic fam ily These high-speed Hex bus drivers are designed specifi­

7 SEGMENT DISPLAY COMMON CATHODE pin configuration

Abstract: 10 pin 7 segment display pin configuration 7 SEGMENT DISPLAY COMMON anode pin configuration C1737 12 pin 7 segment display pin configuration common cathode 7 segment display 4.0 INCH 7 SEGMENT 7 segment common cathode display 7 segment common anode pin configuration PIN CONFIGURATION of 10 pin 7 segment display
Contextual Info: [*13 0.362 • INCH 7 -SEGMENT DISPLAY OPTOELECTRONICS HIGH EFFICIENCY RED FND310C FND317C FND318C PACKAGE DIMENSIONS .020 .508 .016 (.406) .170 (4.318) .130 (3.302) S E A T IN G P LA N E FND 358 FN D 368 .050 • (1.270) .050 (1.270) h - ,2 0 0 (5.080)

M74HC367

Contextual Info: r z 7 S G S -T H O M S O N ^7# M 54/M 74HC367 M 54/M 74HC 368 HEX BUS BUFFER 3-STATE HC367 NON INVERTING, HC368 INVERTING • H IG H SP EE D tpD = 11 ns (TYP.) AT Vcc = 5 V ■ LOW POWER DISSIPATION Ice = 4 nA (MAX.) AT T a = 25 °C ■ HIGH NOISE IMMUNITY

MAX368cpn

Contextual Info: Fault-P rotected Analog M u ltip lexer w ith Latch _ G eneral D escription M axim 's M A X 368/369 are 8 c ha nnel s in g le -e n d e d 1 of 8 and 4 c ha nnel diffe ren tial (2 of 8) fa u lt-p ro te c te d m u ltip lexers w ith o n -c h ip da ta latches. U sing a series

Contextual Info: H EX BUS BUFFER TC74AC367P/F/FN TC74AC388P/F/FN NON-INVERTED, 3-STA TE OUTPUTS INVERTED. 3-STATE OUTPUTS T h e T C 74A C 367 a n d 368 a r e a d v an c e d h ig h sp e e d C M O S H E X B U S BUFFERS f a b r ic a te d w ith silic o n g a te a n d d o u b le

LA 7376

Contextual Info: 8 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 4 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. DIST REVISIONS 00 GP LTR AE D 9 .3 5 •0.1 3 0.25 .368 .005 .01 0 DESCRIPTION DATE DWN 28 APR 05 REVISED PER EC 0 S 1 2 - 0 5 5 4 - 0 4

sb4b

Contextual Info: M/Â-COM/ MIC RO EL EC TR ON IC S 5b4Elä3 DGD0713 MIS « M A G O b'ìE D Aß GaAs Solid State Relay DC-2 GHz SW-368 TO-5-4 Features • High IP2 and IP3 at Low Frequencies • High Compression Point at Low Frequencies • Low Insertion Loss Guaranteed Specifications1

K1V 40 N

Abstract: AD650 AD650S
Contextual Info: - 368 - AD650 * Œ -flâ M M S » # o -ss A D 3 69 - AD650 A (o o i) SU -*3 D (VS= ± 1 5 V , T„ = 25'C) '¡ë & t f t 'J> I Ii» ft ai « f t 'h m m m m ft A m m ft * 100' 40 100- ±20- ±8 ±20* . # S te A £ 40 100’ 40 ¡ fx tS A tl ±8 ±20- ±8

7336

Abstract: RG316
Contextual Info: 13 12 M A T E R IA L S 10 AN D FIN IS H ES : 9.36 HOUSING: ZINC A L L O Y P L A T E D .368 ' SEE T A B LE C E N T E R C O N TA C T: B R A S S / P L A T E D 4 .1 4 , NIN .163 GOLD IN S U L A T O R : T E F L O N . 3.80 O U T E R C O N TA C T: B E R Y L L IU N C O P P E R / P L A T E D

RLA600-12

Abstract: RLA600-15
Contextual Info: 6-1/8" Rigid Hanger Type RLA600B-13-SW Type B in mm D in (mm) RLA600B-13-SW 14.50 2.25 4.25 1.0 0.688 21.6 (368) (57) (108) (25.6) (17.5) (9.82) Weight lb (kg) B l'-qcido-tisrl M&ium C in (mm) E in (mm) A in (mm) System s Hangers attach to top section. Use one for up to 1000 ft

4000B

Abstract: 74LS368 M74HC367 M74HC368 M74HC368DP M74HC368P
Contextual Info: M IT S U B IS H I HIGH S P E E D C M O S M 74H C 368P M 74HC368DP H E X 3 -S T A T E IN V E R T IN G B U F F E R W IT H DESCRIPTION The M 74H C 368 is a sem ico ndu ctor inte grated circuit con­ sisting of six buffers w ith 3-state inverted outputs, the 4 -b it

BC369

Abstract: TRANSISTOR bH Silicon Epitaxial Planar Transistor philips
Contextual Info: I 1 N AUER P H I L I P S / D I S C R E T E L I E J> ^53*331 D027S43 152 H A P X BC369 I SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a plastic TO -92 envelope, intended for low-voltage, high-current LF applications. BC 368/B C 369 is the matched complementary pair suitable for class-B output stages up to 3 W.

705k1

Abstract: 68HC05E0
Contextual Info: • • MFT, RTI MC68HC05E1 4K 368 MFT, RTI X C 68H C05F2 2K 256 16-bit: 1IC, 1 0C M C68HC05F5 5K 224 MFT, RTI M C68HC05F6 4K 320 16-bit: (1IC, IO C ) X C 68H C05F8 8K 320 MC68HC05G1 8K MC 68H C05G 3 SPI l2C 20 i/o 32 kH z PLL C lock S ynthesizer 28 D I P - P