D 368 S 10 Search Results

368D

Abstract: SC8A 610C RB420D RB421D RB425D RB441Q RB450F RB471E RB501H
Contextual Info: 205 D 368 A 669 669 205 A 368 D 610 F 205 F 610 D 610 A 368 D 610 A 368 D 610 A 1730 G <64 : 610 D 368 A 1563 < Û < C JQ LO co O O O 368 A 610 A 205 A ,3680 | S 10A 421 B 421 B 78 E 420 E 610 A <c <s CJ> w w u. <c -c o if ü k*J £ & -PI Q "rv vr1 ^ ÍK ,

Vrsm

Abstract: 368D 610C RB420D RB421D RB425D RB441Q RB450F RB471E RB501H
Contextual Info: 205 D 368 A 669 669 205 A 368 D 610 F 205 F 610 D 610 A 368 D 610 A 368 D 610 A 1730 G <64 : 610 D 368 A 1563 <Û <C JQ LO co O O O 368 A 610 A 205 A ,3680 | S 10 A 421 B 421 B 78 E 420 E 610 A <c <s CJ>w w u. <c -c o if ü k*J £ & -PI Q "rv vr1 ^ ÍK , •Ç-. ^ i

D368S

Abstract: 81-MIT
Contextual Info: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 368 S 10.14 S Elektrische Eigenschften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak forward reverse voltage

MC68hc785

Abstract: hc68hc705 mc68hc705bd7b 9948 P 181 YE 98994
Contextual Info: MC68HC705BD7B - 1 FCR4.0MC5 Fig .a- e Vdd- 5 CVD * a. V1H/V1L 7 5 1 -1 7 VJL VZH ! c. Fosc .3 .1 -.1 -.3 -.5 800 600 400 4*9 — -.4 3.2 5;3 - - r- 2 f s - 8 -.2 - f i 1 « • d . Trtse -« ■ CuS] 90B 368 2 * _ - I 368 • e. Duty i 1 1X1 - 53.1

Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C123BH6PM Microcontroller identical to LM4F210H5QR D ATA SHE E T D S -T M 4C 123BH6 P M - 1 4 6 0 2 . 2 6 4 8 S P M S 368 C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright

K1V 40 N

Abstract: AD650 AD650S
Contextual Info: - 368 - AD650 * Œ -flâ M M S » # o -ss A D 3 69 - AD650 A (o o i) SU -*3 D (VS= ± 1 5 V , T„ = 25'C) '¡ë & t f t 'J> I Ii» ft ai « f t 'h m m m m ft A m m ft * 100' 40 100- ±20- ±8 ±20* . # S te A £ 40 100’ 40 ¡ fx tS A tl ±8 ±20- ±8

MAX368cpn

Contextual Info: Fault-P rotected Analog M u ltip lexer w ith Latch _ G eneral D escription M axim 's M A X 368/369 are 8 c ha nnel s in g le -e n d e d 1 of 8 and 4 c ha nnel diffe ren tial (2 of 8) fa u lt-p ro te c te d m u ltip lexers w ith o n -c h ip da ta latches. U sing a series

Contextual Info: H EX BUS BUFFER TC74AC367P/F/FN TC74AC388P/F/FN NON-INVERTED, 3-STA TE OUTPUTS INVERTED. 3-STATE OUTPUTS T h e T C 74A C 367 a n d 368 a r e a d v an c e d h ig h sp e e d C M O S H E X B U S BUFFERS f a b r ic a te d w ith silic o n g a te a n d d o u b le

LA 7376

Contextual Info: 8 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 4 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. DIST REVISIONS 00 GP LTR AE D 9 .3 5 •0.1 3 0.25 .368 .005 .01 0 DESCRIPTION DATE DWN 28 APR 05 REVISED PER EC 0 S 1 2 - 0 5 5 4 - 0 4

sb4b

Contextual Info: M/Â-COM/ MIC RO EL EC TR ON IC S 5b4Elä3 DGD0713 MIS « M A G O b'ìE D Aß GaAs Solid State Relay DC-2 GHz SW-368 TO-5-4 Features • High IP2 and IP3 at Low Frequencies • High Compression Point at Low Frequencies • Low Insertion Loss Guaranteed Specifications1

Contextual Info: NUMBE* C -160 388 -E E > D IM E N SIO N S IN IN C H E S — DO NOT 8 C A LC PRINT •71 pOSO-OSO INS, DIA, 020 MAX r amp m 160 388-1 160 388-2 110 388-3 160 388-4 1 >250 ‘I FINISH non« tlrwlattd *llv*r platid goldplat«d MATERIAL BRASS 160 368-6 .141 non*

4000B

Abstract: 74LS368 M74HC367 M74HC368 M74HC368DP M74HC368P
Contextual Info: M IT S U B IS H I HIGH S P E E D C M O S M 74H C 368P M 74HC368DP H E X 3 -S T A T E IN V E R T IN G B U F F E R W IT H DESCRIPTION The M 74H C 368 is a sem ico ndu ctor inte grated circuit con­ sisting of six buffers w ith 3-state inverted outputs, the 4 -b it

ac238

Abstract: D368A ac237 AC239
Contextual Info: TC74AC367PI FI FN. TC74AC368P/F/FN HEX BUS BUFFER T C 7 4 A C 3 6 7 P /F /F N T C 7 4 A C 3 M P /F /F N N O N -IN V E R T E D , 3 -S T A T E O U TPU TS IN V E R T E D . 3 -S T A T E O U TPU TS T he TC74AC367 an d 368 a re advanced high speed CMOS HEX BUS BUFFERS fa b ric a te d w ith silicon g a te an d double

S200P

Abstract: S30V LM368 2.5 100mw 1952R LM368-2
Contextual Info: LM 368-2.5 ffim. tft. è ^1 Ì f l E 0 Ì + 2.5 v rej a , ( S ia H ' J 7 N ] - « 3 iS i= - « i|ilK F F J p |i« T - . t B * * t £ Ì Ì f c i f f llp p m /'C I; M J 5 y « i i t T Ì , 0 . 0 0 0 1 % / V T - Ì> Ì >. m . ib £ .V $ L lg :& m tJ itiZ :ti< D 0 .0 2 %

220n 400V capacitor MKT

Abstract: K 368 PCMT 368 capacitor polyester 100n 100nj PCMT368 368 marking L 64105 62183 MKT 100n
Contextual Info: Pilkor components Metallized Polyester film capacitors PCMT 368 MKT RADIAL LACQUERED CAPACITORS Dipped Type Pitch 10.0/15.0/22.5/27.5mm (reduced pitch : 7.5mm) QUICK REFERENCE DATA Capacitance range (E12 series) 0.01 to 6.8㎌ Capacitance tolerance ±10%, ±5%

Contextual Info: 10 | - DIM CONTACT LENGTH IWI I w f I w 2.00 I I in w a n w LA DIM P COPLANARITY SEE NOTE 3 4.90 0.90 2X DIM A I 2.00 I 0.6 0 TYP *T| 0 .2 0 T z l 1 2.50 iU U U L M NOTE: 1) 12 CIRCUIT SIZE SHOWN FOR ILLUSTRATION ONLY. SEE CHART FOR AVAILABLE PART SIZES.

Contextual Info: IHURGE RXB Aluminum Electrolytic Capacitors F eature • 105°C, 5 ,0 0 0 h o u rs assu red • S u itab le for sw itch in g p o w er sup p lies, U P S, B allast • S m aller size w ith large p erm issib le rip p le cu rrent • R oH S C o m p lian ce SPECIFICA TIO N S

Contextual Info: F-206-1 PC/104+ SOCKETS ESQT -368 , PTHF SERIES S P E C IF IC A T IO N S For complete specifications and recommended PCB layouts see www.samtec.comvESQT or www.samtec.com?PTHF Insulator Material: Black Liquid Crystal Polymer (ESQT) Black High Temp Nylon (PTHF)

DIN IEC 62

Abstract: DIN 41652 HARTING siemens b 58 468 PART MARKING R11 IEC 168 insulator "sub-d 25" connector 6605
Contextual Info: -fl«_ _ iTI^CvO Electronics _ 108-90002 Product S pec if ication 09/jun/00 Rev. A Sub-D angled at 90° with press-in terminals for Harting 1. GENERAL 1.1 Application This ‘Engineering obligation for delivery’ describes the Sub-D connector angled at 90° with press-in

el 509

Abstract: D368S
Contextual Info: EUPEC Fast rectifier diodes Type If r m s m V rrm V r sm = If sm / ¡ 2dt blE » lFAVM/tc • 3403217 0001333 bOb W U P E C V TO rT Ir m R th JC tv j max Outline VRRM + 50 V1) A V 10 ms, 10 ms, tv) = tvj = tyj ~ tv, max ^vj max t,| max t., max 1F = IfaVM

Contextual Info: Rev D A T E :_ Description AW O# 10616 • APPROVED: Date 10/19/10 RELEASED Appr TITLE: -.701 [1 7 .8 0 ]-.368 [9 .3 5 ]- I-— .236 [6 .0 0 ]— 0.031 [0 .8 0 ] .024 p - [0 .6 0 ] 0.187 [4 .7 5 ] ~ r ~ .126 [3 .2 0 ] L .102 [2 .6 0 ] .236 .398 [6 .00 ]

D67U

Contextual Info: Fast rectifier diodes Type If r m s m V rrm V rsm = V rrm Ifsm ./¡2dt If a v m ^ c V TO rT Ir m RthJC tv i m ax Outline +100 V1) 10 ms, 10 ms, tvi = t»i = tv j = tvj max 180 “el tvj max tv , tvj max tvj max ip = Ifavm sin. d ip /d t = V V m ii °c/w

F366

Contextual Info: 366 • 368 54F/74F366 • 54F/74F368 Connection Diagrams Hex Inverter Buffer W ith 3-State Outputs • 3-Stat* Buff • High-Speed • Bus-Oriented Vtputs Sink 64 mA GND 10 zpoorfci; y [Te [n] Ï8 ’F366 Ö IT E E B E 0 Œ 1 nL Ö 1 O E ' S NC □ :

STR 456

Abstract: 1600626-X 1600616 1600616-X 1-292499-1 HDR 2x10
Contextual Info: 107-68703 Packaging Specification 18Jan10 Rev S MBXL HSG 1. PURPOSE 目的 Define the packaging specifiction and packaging method of MBXL HSG. 订定 MBXL HSG 产品之包装规格及包装方式。 2. APPLICABLE PRODUCT 适用范围 PKG TYPE Part Number Description