D 2025 AMPLIFIER Search Results

UTC2025

Abstract: UTC 2025 uln 2800 data Avantek* UTO AVANTEK uto Avantek* UTC 2025 UTO 2025 AVANTEK utc UTC 2025 B MLPI
Contextual Info: MME ì> m u m ib b O a v a n tek 00000=13 1 B A V A U T O /U T C 2025 S eries T h in -F ilm C a s c a d a b le A m p lifie r 100 to 2000 M H z • • AVANTEK INC FEATURES APPLICATIONS • Frequency Range: 100 to 2000 MHz • High Dynamic Range • Medium Gain: 11.0 dB Typ

MMZ20363B

Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide
Contextual Info: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless

MRF8P9040N

Abstract: rf Amplifier mhz Doherty 470-860 MRF1513NT1 s2p MRF8S21100H MRF8S21100HS MRF8S9220HR3 AN1643 MRF6P23190H MRF8S9170NR3 MW6S004NT1
Contextual Info: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 35.1 5/2010 RF Product Selector Guide Freescale Semiconductor offers a comprehensive portfolio of RF products, primarily serving the cellular infrastructure, general purpose amplifier, broadcast, aerospace and industrial

Contextual Info: Whpì H EW LETT mL'EM PACKARD Avantek Products Thin-Film Cascadable Amplifier 100 to 2000 MHz Technical Data UTO/UTC 2025 Series Features Description Pin Configuration • Frequency Range: 100 to 2000 MHz The 2025 Series is a wideband, high-power GaAs FET RF ampli­

SHM-LM2

Abstract: ADSD-1405MC ADC-HX12BGC DAC-608C SHM-45MC SHM-45MM CCDs Charge Coupled Devices ADC-810MM SHM-LM-2 ADC-Hx12
Contextual Info: Data Acquisition Products CCD Signal Processor/Imaging Converters A/D Converters Sampling A/D Converters Digital-to-Analog Converters Sample/Hold Amplifiers Single-Package Data Acquisition Sing Multiplexers Amplifiers www.murata-ps.com About Murata Power Solutions

BLD6G21L-50

Abstract: BLD6G21LS-50 4350B
Contextual Info: BLD6G21L-50; BLD6G21LS-50 TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor Rev. 2 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description The BLD6G21L-50 and BLD6G21LS-50 incorporate a fully integrated Doherty solution

Contextual Info: BLC8G21LS-160AV Power LDMOS transistor Rev. 1 — 12 August 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS transistor for base station applications at frequencies from 1805 MHz to 2025 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a Doherty demo board.

C5750X7S2A106KT

Abstract: AFT20P140-4WNR3 aft20p140-4wn aft20p140 TRANSISTOR GF 507 MXc 501
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 24 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P2160H Rev. 1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20160HR3 MRF8P20160HSR3 Designed for CDMA base station applications with frequencies from 1880 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7P20040H Rev. 2, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF7P20040HR3 MRF7P20040HSR3 Designed for CDMA base station applications with frequencies from 1800 to

DARLINGTON POWER PACK STK-0059

Abstract: DARLINGTON POWER PACK STK-0060 STK power amplifier 2145 DARLINGTON POWER PACK STK-0050 stk power amplifier ic Sanyo STK 2025 IC STK 2139 DARLINGTON POWER PACK STK-0105 Sanyo STK 8260 stk power amplifier ic 1035
Contextual Info: FeatUifes General output stage of power amplifier has a d ifficult and complex problem about heat sink designing and its setting. Sanyo's D.P.P. intends to decrease electronic parts and rationalize a manufacturing process by designing 1C of only output stage of power amplifier.

1990 1142

Contextual Info: AH212 1 Watt High Linearity, High Gain InGaP HBT Amplifier Product Features Product Description • 1800 – 2400 MHz Functional Diagram The AH212 is a high dynamic range two-stage driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve superior performance

ATC600F100JT250XT

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20161HS Rev. 0, 10/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base

Contextual Info: DATA SHEET SKY66002-11: 1900 to 2025 MHz, +19 dBm Linear Power Amplifier Applications Description • Residential femtocells The SKY66002-11 linear Power Amplifier PA is a fully matched surface mount module developed for WCDMA applications operating from 1900 to 2025 MHz. The device meets the stringent

Amplifonix

Contextual Info: About Amplifonix. Amplifonix is a manufacturer o f Hybrid Bi-Polar and GaAs FET Low to Medium Power Amplifiers, Voltage Controlled Oscillators VCO's and Pin Diode and GaAs M M IC Control Device Products that operate in the frequency range o f kHz to 6,000 MHz.

bu 5027

Abstract: 335 for hen nta IHB60T240512C NME1205S NTH0505MC nmv1515s LSM-T/10-D12-C NMA2412D HL02R24S05Y HL02R05D15YC
Contextual Info: DC/DC Converters Isolated Point-of-Load Bus Converters Processor Support Memory Support www.murata-ps.com Overview PoL Converters P If you need a DC/DC converter look no further than… Bus Converters B 5IF
8PSMEhT
/P IIsolated Single About Murata Power Solutions

NMA2415SC

Abstract: NKE0505DC NMS0505C ndy2405c NTE0505MC nma2412sc bwr-15/275-d5a-c NDY2409C BMP-15/1.3-D48-C DATEL BWR-12/335-D5A-C
Contextual Info: DC/DC Converters Isolated Point-of-Load Bus Converters Processor Support Memory Support www.murata-ps.com Overview PoL Converters Bus Converters Isolated Single Isolated Dual/Bipolar Isolated Dual/Asymmetric Isolated Triple Processor Power Memory Support 2

IPG YLR

Abstract: YLR-10000 YLR-5000 YLR-3000 YLR-2000-SM IPG Photonics YLR-1000-SM YLR-20000 500W amplifier YLR-2000
Contextual Info: High Power Fiber Lasers for Industrial Applications T h e P o w e r t o Tr a n s f o r m T M High Power Fiber Laser Advantages IPG’s low-order-mode kilowatt-class fiber lasers range in power from 1kWatts to 50kWatts, operating in CW or modulated modes up to 20 kHz with wall-plug efficiencies of greater than 25%. The dynamic operating range of

Contextual Info: Æ a n A M P com pany High Performance Amplifiers, 29 dB Gain 5 - 200 MHz AM-/AMC-140 FP-9 Features • +4? dBm Typical M idband Third O rder Intercept • +28 dBm Typical M idband 1 dB Com pression • 5.4 dB Typical M idband Noise Figure ¡1 : NTT- Guaranteed Specifications*

TCA 2025

Abstract: 2N6674-2N6678 TFA 0305 RCP700 2N4036 2N6673 2N6674 2N6675 2N6676 2N6677
Contextual Info: lc sat Features •Excellent switching performance at high volt­ age and current (to 650 V V q e v . 15 A lc(sat) •100% testing of switching parameters, in­ cluding turn-off time and saturation voltage, at Tc=:25°C and T q > 100 °C to provide limit values for worst-case design

Contextual Info: CPL-WB-00D3 Wide band directional coupler with ISO port Datasheet - production data Features • 50 Ω nominal input / output impedance • Wide operating frequency range 704 MHz to 2570 MHz • Low insertion Loss (< 0.2 dB) • 34 dB typical coupling factor

Contextual Info: ASW314 5 ~ 3000 MHz MMIC Amplifier Features Description  16 dB Gain at 900 MHz The ASW314, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide range of frequency, being suitable for use in both receiver and transmitter of telecommunication systems

TRANSISTOR C 6090 npn

Abstract: RCA Power Transistor TO-3 4 225 TRANSISTOR C 6090 2n6675 rca pnp transistor beta values 2N62* rca to3 transistor 6090 audio output TRANSISTOR NPN driver transistor hfe 60-100 2N5415
Contextual Info: lc sat Features •Excellent switching performance at high volt­ age and current (to 650 V V q e v . 15 A lc(sat) •100% testing of switching parameters, in­ cluding turn-off time and saturation voltage, at Tc=:25°C and T q > 100 °C to provide limit values for worst-case design