D 2025 AMPLIFIER Search Results

ndr 550

Abstract: Si4136 Si4136-BT
Contextual Info: Si4136 I SM RF S Y N T H E S I Z E R W I T H I N T E G R A T E D VCO S FOR WIRELESS COMMUNICATIONS Features ! Dual-Band RF Synthesizers ! RF1: 2300 MHz to 2500 MHz RF2: 2025 MHz to 2300 MHz ! " " ! IF Synthesizer " ! ! Minimal External Components Required

Si4136XM-BT

Abstract: ndr 550 Si4136XM
Contextual Info: Si4136XM R F S Y N T H E S I Z E R W I T H I N T E G R A T E D V CO S F O R SATELLITE RADIO Features ! Dual-Band RF Synthesizers ! RF1: 2300 MHz to 2500 MHz RF2: 2025 MHz to 2300 MHz ! " " ! IF Synthesizer " ! ! ! 62.5 MHz to 1000 MHz Integrated VCOs, Loop Filters,

UTC2025

Abstract: UTC 2025 uln 2800 data Avantek* UTO AVANTEK uto Avantek* UTC 2025 UTO 2025 AVANTEK utc UTC 2025 B MLPI
Contextual Info: MME ì> m u m ib b O a v a n tek 00000=13 1 B A V A U T O /U T C 2025 S eries T h in -F ilm C a s c a d a b le A m p lifie r 100 to 2000 M H z • • AVANTEK INC FEATURES APPLICATIONS • Frequency Range: 100 to 2000 MHz • High Dynamic Range • Medium Gain: 11.0 dB Typ

Si4126-F-BM

Abstract: Si4126-F-GM Si4136 Si4136-F-BM Si4136-F-BT Si4136-F-GM Si4136-F-GT
Contextual Info: Si4136/Si4126 I S M R F S Y N T H E S I ZE R W I T H I N T E G R A T E D V C O S F O R W I R E LE S S C O M M U N I C A T I O N S Features  Dual-band RF synthesizers 2300 MHz to 2500 MHz RF2: 2025 MHz to 2300 MHz  RF1:  MHz to 1000 MHz

TDA 2025

Abstract: TDA2025 30w tda power amplifier ic TDA 3612 TDA 2056 20w tda tda 50w TDA 1512 30w tda ic IC tda 2140
Contextual Info: SIEM ENS % y TDA 2025 50 Watt Power Amplifier Pin Configuration Pin Definitions Pin Function Non-Inverting Output Input Vs Power Ground Hum Suppression Pre-Stage Ground Inverting Output The TDA 2025 is a 20W to 50W watt power amplifier for Automotive and Entertainment applications featuring

MMZ20363B

Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide
Contextual Info: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless

MRF8P9040N

Abstract: rf Amplifier mhz Doherty 470-860 MRF1513NT1 s2p MRF8S21100H MRF8S21100HS MRF8S9220HR3 AN1643 MRF6P23190H MRF8S9170NR3 MW6S004NT1
Contextual Info: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 35.1 5/2010 RF Product Selector Guide Freescale Semiconductor offers a comprehensive portfolio of RF products, primarily serving the cellular infrastructure, general purpose amplifier, broadcast, aerospace and industrial

Contextual Info: Whpì H EW LETT mL'EM PACKARD Avantek Products Thin-Film Cascadable Amplifier 100 to 2000 MHz Technical Data UTO/UTC 2025 Series Features Description Pin Configuration • Frequency Range: 100 to 2000 MHz The 2025 Series is a wideband, high-power GaAs FET RF ampli­

SHM-LM2

Abstract: ADSD-1405MC ADC-HX12BGC DAC-608C SHM-45MC SHM-45MM CCDs Charge Coupled Devices ADC-810MM SHM-LM-2 ADC-Hx12
Contextual Info: Data Acquisition Products CCD Signal Processor/Imaging Converters A/D Converters Sampling A/D Converters Digital-to-Analog Converters Sample/Hold Amplifiers Single-Package Data Acquisition Sing Multiplexers Amplifiers www.murata-ps.com About Murata Power Solutions

smd 501 transistor

Abstract: smd transistor 501 BLD6G21LS-50 SOT1130A TD-SCDMA TRANSISTOR 2025 4350B BLD6G21L-50 Rogers 4350B 123J capacitor
Contextual Info: BLD6G21L-50; BLD6G21LS-50 TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor Rev. 01 — 28 October 2009 Objective data sheet 1. Product profile 1.1 General description The BLD6G21L-50 and BLD6G21LS-50 incorporate a fully integrated Doherty solution

Contextual Info: BLD6G21L-50; BLD6G21LS-50 TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor Rev. 2 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description The BLD6G21L-50 and BLD6G21LS-50 incorporate a fully integrated Doherty solution

BLD6G21L-50

Abstract: BLD6G21LS-50 4350B
Contextual Info: BLD6G21L-50; BLD6G21LS-50 TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor Rev. 2 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description The BLD6G21L-50 and BLD6G21LS-50 incorporate a fully integrated Doherty solution

LS 2027 audio amp

Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Contextual Info: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3

Contextual Info: BLC8G21LS-160AV Power LDMOS transistor Rev. 1 — 12 August 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS transistor for base station applications at frequencies from 1805 MHz to 2025 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a Doherty demo board.

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P2160H Rev. 1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20160HR3 MRF8P20160HSR3 Designed for CDMA base station applications with frequencies from 1880 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 24 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7P20040H Rev. 2, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF7P20040HR3 MRF7P20040HSR3 Designed for CDMA base station applications with frequencies from 1800 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 1, 11/2013 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs This 24 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 1, 1/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs This 24 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth

DARLINGTON POWER PACK STK-0059

Abstract: DARLINGTON POWER PACK STK-0060 STK power amplifier 2145 DARLINGTON POWER PACK STK-0050 stk power amplifier ic Sanyo STK 2025 IC STK 2139 DARLINGTON POWER PACK STK-0105 Sanyo STK 8260 stk power amplifier ic 1035
Contextual Info: FeatUifes General output stage of power amplifier has a d ifficult and complex problem about heat sink designing and its setting. Sanyo's D.P.P. intends to decrease electronic parts and rationalize a manufacturing process by designing 1C of only output stage of power amplifier.

1990- 2335

Abstract: AH212-S8G 0 DFN triquint AH212 AH212-EG AH212-EPCB1960 AH212-EPCB2140 AH212-S8PCB1960 AH212-S8PCB2140
Contextual Info: AH212 1 Watt High Linearity, High Gain InGaP HBT Amplifier Product Features Product Description • 1800 – 2400 MHz Functional Diagram The AH212 is a high dynamic range two-stage driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve superior performance

AH212

Abstract: AH212-EG AH212-EPCB1960 AH212-EPCB2140 AH212-S8G AH212-S8PCB1960 AH212-S8PCB2140 add 5201
Contextual Info: AH212 1 Watt High Linearity, High Gain InGaP HBT Amplifier Product Features Product Description • 1800 – 2400 MHz Functional Diagram The AH212 is a high dynamic range two-stage driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve superior performance

1990 1142

Contextual Info: AH212 1 Watt High Linearity, High Gain InGaP HBT Amplifier Product Features Product Description • 1800 – 2400 MHz Functional Diagram The AH212 is a high dynamic range two-stage driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve superior performance

AM-1635

Contextual Info: MITEQ AM-1635 SERIES AMPLIFIER MODEL NUMBER GAIN dB (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) 200–1000 AM-1635-1000 14 0.5 2.0:1 50/50 3.3 27 15 235 7H 200–2000 AM-1635-2000 13 0.75 2.2:1 50/50