D 1556 TRANSISTOR Search Results

transistor d 1556

Abstract: d 1556 transistor CQ 629 2SC1556 f632 transistor 2sc
Contextual Info: 5/U D :/N PN ie5>*S/>W 7U -:f-fêh5>î>a5> À SILICON NPN EPITAXIAL PLANAR TRANSISTOR O U H F * * * * « * !« o U H F« jtm m 2SC 1556 ü it X m m INDUSTRIAL APPLICATIONS U n i t in mm O UHF Band Medium Power A m p l i f i e r A p p l i c a t i o n s O UHF Band O s c i l l a t o r A p p l i c a t i o n s

Contextual Info: Proximity Sensors Inductive Stainless Steel Housing Type EI, M30, High Noise Immunity • Stainless steel housing, cylindrical • Diameter: M30 • Sensing distance: 9 mm • Hysteresis: 25 - 45% • Power supply: 24 VDC • Output: Transistor PNP, make switching

Contextual Info: ANALOG DEVICES 24-Bit X - A ADC PRELIMINARY TECHNICAL DATA FEATURES: A D 1555 4th Order 2 -A M o d ulato r Large Dynam ic Range: 118 dB m in, 121 dB typical @ 1 ms 118 dB typical @ 0.5 ms Low Distortion: -116 dB m ax, -120 dB typical Sam pling Rate a t 256 kSPS

Contextual Info: SEP 2 d t IM S G 1 7 3 high colour palette-DAC with “PixMix"” mos Advance information The information in this document is subject to change PCIk PixMix VSync Blank Iref FEATURES FEATURES • Compatible with VGA standard IMS G171/176 • Triple 6-bit DACs with output comparators

AN1556

Abstract: RB140 AN-138 ISL28127 Mark Alexander
Contextual Info: Application Note 1556 Author: Don LaFontaine Building an Accurate SPICE Model for Low Noise, Low Power Precision Amplifiers Abstract In today's fast moving competitive markets, more and more customers are requesting SPICE models to run comprehensive circuit simulations. System engineers are

D 1556

Abstract: D1555 z-a capacitor 1556A BW 3010 T D 1555
Contextual Info: ANALOG DEVICES 24-Bit Z-A ADC Preliminary Technical Information FEATURES AD1555 4th Order E-A M odulator Large Dynam ic Range: 118 dB guaranteed @ 405 Hz 121 dB typical 118 dB typical @ 810 Hz Low Distortion: -116 dB guaranteed 120 dB typical Sam pling Rate of 256 ksps

transistor d 1556

Abstract: d 1556 transistor transistor af 126 AF279S transistor 1555 UHF pnp transistor AF279 PNP UHF transistor flE35b05 AF 279
Contextual Info: ESC D • flE35bG5 OODMO?^ 7 m S I Z G ' PNP Germanium UHF Transistor A F 279 S SIEMENS A K T I E N G E S E L L S C H A F 25C 04079 D - — fo r in p u t stages up to 9 0 0 M H z fly ' A n ' AF 279 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package similar to T 0 119. This transistor is particularly

d 1556 transistor

Contextual Info: • bbS3T31 0025fc.Qfl ISM « A P X N AMER PHILIPS/DISCRETE BSS64 b?E 3> HIGH VOLTAGE N-P-N TRANSISTORS Silicon planar epitaxial transistor in a microminiature plastic envelope intended for application in thick and thin-film circuits. This transistor is intended fo r high-voltage general purpose and switching

transistor d 1556

Abstract: d 1556 transistor BSS64
Contextual Info: • bbS3T31 D025fci0ô ISM BIAPX N AUER PHILIPS/DISCRETE BSS64 b?E D HIGH VOLTAGE N-P-N TRANSISTORS Silicon planar epitaxial transistor in a m icrom iniature plastic envelope intended fo r application in thick and th in -film circuits. This transistor is intended fo r high-voltage general purpose and switching

Contextual Info: NSL12AW High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com Features: • • • • High Current Capability (3 A) High Power Handling (Up to 650 mW) Low VCE(s) (170 mV Typical @ 1 A) Small Size

t559

Contextual Info: SIEMENS BFP 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7,5GHz F = 1 .5 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!

pm4020

Abstract: AF279 p21b AF279S AF240 900 mhz germanium diode Germanium Q60106-X240 S400 d 1556 transistor
Contextual Info: f 25C D • flS3SbOS 00DMQ7b 1 H S I E 6 PIMP Germanium RF Transistor - SIEMENS AKTIENGESELLSCHAF A F240 for m ixer and oscillator stages up to 9 0 0 M H z AF 2 4 0 is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads

transistor D 1557

Abstract: d 1556 transistor transistor d 1556 1557 b transistor transistor 1555
Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding, DC/DC and AC/DC

vqe 24 d

Abstract: vqe 24 e VQE 23 E vqe 23 vqe 14 E VQE 21 d vqe 23 f vqe 23 c IGT6D20 IGT6E20
Contextual Info: IGT6D20,E20 20 AMPERES 400,500 VOLTS EQUIV. Rd S ON = 0.12 0 Insulated Gate Bipolar Transistor This IG T" Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and

sd1555

Abstract: s2055af 4 s2055af S2055 2SD142 2SD871 2sd820
Contextual Info: TOSHIBA 6 D eflection System 6-1 D eflection System * : U nd er developm ent 6-2 V ertical Deflection O u tp u t T ransistors '^ ^ -v ^ ^ P a ck ag e Characteristics V C E O = 160 V l c = 1A V c e o = 150 V *c* 1-5A TO -1 2 6 TO -2 0 2 2 SC 2 3 83 2SA1Q 13

Contextual Info: Diagonal 6.0mm Type 1/3 Progressive Scan CCD Image Sensor for Color Cameras ICX445AQA Description The ICX445AQA is a diagonal 6.0mm (Type 1/3) interline CCD solid-state image sensor with a square pixel array and 1.25M effective pixels. Progressive scan enables all pixel signals to be output separately within 1/22.5 second.

icx445

Abstract: ICX445AQA asa16 ICX44 h1a transistor transistor BUD 129 2SC4250 2SC5095 CM500S CXD3400N
Contextual Info: Diagonal 6.0mm Type 1/3 Progressive Scan CCD Image Sensor for Color Cameras ICX445AQA Description The ICX445AQA is a diagonal 6.0mm (Type 1/3) interline CCD solid-state image sensor with a square pixel array and 1.25M effective pixels. Progressive scan enables all pixel signals to be output separately within 1/22.5 second.

ICX445al

Abstract: icx445 ICX44
Contextual Info: Diagonal 6.0mm Type 1/3 Progressive Scan CCD Image Sensor for B/W Cameras ICX445ALA Description The ICX445ALA is a diagonal 6.0mm (Type 1/3) interline CCD solid-state image sensor with a square pixel array and 1.25M effective pixels. Progressive scan enables all pixel signals to be output separately and sequentially within 1/22.5 second.

Contextual Info: Diagonal 6.0mm Type 1/3 Progressive Scan CCD Image Sensor for B/W Cameras ICX445ALA Description The ICX445ALA is a diagonal 6.0mm (Type 1/3) interline CCD solid-state image sensor with a square pixel array and 1.25M effective pixels. Progressive scan enables all pixel signals to be output separately and sequentially within 1/22.5 second.

SGH30N60RUF

Abstract: Transistor GE 67
Contextual Info: IGBT SGH30N60RUF Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT RUF series provides low conduction and switching losses as well as short circuit ruggedness. RUF series is designed for the applications such as motor control, UPS and general

icx445

Abstract: Sony ICX445ALA ICX445ALA h1a transistor asa16 ICX445al transistor H1A 2SC4250 2SC5095 CM500S
Contextual Info: Diagonal 6.0mm Type 1/3 Progressive Scan CCD Image Sensor for B/W Cameras ICX445ALA Description The ICX445ALA is a diagonal 6.0mm (Type 1/3) interline CCD solid-state image sensor with a square pixel array and 1.25M effective pixels. Progressive scan enables all pixel signals to be output separately and sequentially within 1/22.5 second.

SGH30N60RUF

Contextual Info: SGH30N60RUF Short Circuit Rated IGBT General Description Features Fairchild's RUF series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control,

RUFD

Abstract: IGBT 60A Diode UJ igbt 30A SGH30N60RUFD DSA003144
Contextual Info: SGH30N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control,

Contextual Info: SGH30N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control,