CXK* SONY Search Results

Contextual Info: Sony. CXK 58110O TM /YM IS Ö W 131072-word X 8-bit High Speed CMOS Static RAM D escription CXK58110OTM/YM is a 1M bits, 131072 words by 8 bits, CMOS static RAM. It is suitable for portable and CXK581100TM 32 pin TSOP Plastic CXK581100YM 32 pin TSOP (Plastic)

Contextual Info: SONY« CXK 59290 M/TM -70L710U12L 32768-word x 9-bit High Speed CMOS Static RAM D escription CXK59290M 32 pin SOP Plastic The CXK59290M/TM is a 294912 bits high speed CMOS static RAM organized as 32768 words by 9 bits and operates from a single 5V supply. This device is

Contextual Info: SONY, CXK5971AP/AM/AJ 25/30/35 8192-word x 9-bit High Speed CMOS Static RAM Description CXK 5971A P CXK5971 AP/AM/AJ are 73,728 bits high speed 2 8 pin D IP P la s tic C M O S static RAMs organized as 8,192-word by 9-bit and operate from a single 5V supply. These devices are

NG42

Contextual Info: 5 18120 J/TM 12 SONY CXK B 65,536-word x 18-bit High-Speed Bi-CMOS Static RAM Description C XK5B18120J/TM are high speed 1Mbit Bi-CMOS sta tic RAMs orga nize d as 6 5 ,5 3 6 -w o rd s-b y-1 8 -b its. Operating on a single 3.3V supply these asynchronous ICs are suitable for use in high speed and low power

CXK581020J

Abstract: sony cxk581020j static ram 2015
Contextual Info: CXK 581020 SP/J SONY 131072-word X -35/45/55 8-bit High Speed CMOS Static RAM Description CXK581020SP 32 pin DIP Plastic CXK581 0 2 0 S P / J are 1 3 1 ,0 7 2 -w o rd x 8 -b it high speed CMOS sta tic RAMs suitable fo r use in high speed and lo w power applications.

Contextual Info: CXK 59289P/M SONY« 32,768-word x 9-bit High Speed CMOS Static RAM * un d er - 2 0/25 d e v e lo p m e n t D e sc rip tio n The static 9-bit. from CXK59289P 32 pin DIP Plastic C X K 5 9 2 8 9 P / M is a high speed CM OS R A M w hich consists of 32,768-word x

Contextual Info: SONY CXK5V81OOOATM -8 5 L L X /1 0 L L X 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK5V81000ATM is a high speed CMOS static RAM organized as 131072-words by 8-bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data

8257A

Abstract: 58257A
Contextual Info: SONY. CXK58257ATM/AYM •12LB 32768-word x 8-bit High Speed CMOS Static RAM Description CXK58257ATM/AYM is a 256K bits, 32768 words by 8 bits, CMOS static RAM. Operating on a single 2.7 to 5.5V supply. It is suitable for portable and battery back-up systems which require extremely small package and low

Contextual Info: SONY CXK58258AP/AJ - 15720 / 25 / 35 ’ 32,768-word x 8-bit High Speed CMOS Static RAM *äniySo7lSTbie Description The C X K 5 8 2 5 8 A P /A J is a high speed CMOS static RAM which consists of 32,768-word x 8-bit. It operates at 15 / 2 0 / 2 5 / 3 5 n s access

CXK541000J-25

Abstract: CXK541000J-30 SOJ032-P-0400-A
Contextual Info: CXK541000J SONY. -25/30/35 Preliminary 262144-word x 4-bit High Speed CMOS Static RAM Description C X K 5 4 1 0 0 0 J is a 1048576 bits high speed C M O S static R A M organized a s 262144 w ords by 4 bits and operates from a single 5 V supply. T his device is suitable for use in high speed and low

CXK584000

Contextual Info: SONY. CXK584000TM/YM/M/P -55U70ua5L,0L -55LL/70LL/85LL/1 OLL 524288-word x 8-bit High Speed CMOS Static RAM D escription CXK584000TM/YM/M/P is a 4,194,304 bits high speed CMOS static RAM organized as 524,288 words by 8-bits. Polysilicon TFT cell technology realized

1202S

Contextual Info: SONY C X K 1 2 2 S Digital Delay Line Description Package Outline The C X K 1 2 0 2 S is a digital line memory pertaining to 8-bit structure which employs silicon gate CM OS process. It can easily be used to realize compensation for dropout of VTR and used as a digital filter, noise reduction, etc.

Contextual Info: CXK59288P/J -15/20/25 SONY» 32768-word X 9-bit High Speed CMOS Static RAM Description The C X K 5 9 2 8 8 P / J is a high speed CMOS static RAM which consists of 32768-word x 9-bit. It operates at 15 n s / 2 0 n s / 2 5 n s access time from 5V single power supply.

Contextual Info: CXK384001/382001 SONY 524,288 /262,144-word X 8-bit CMOS Mask Programmable ROM Description CXK384001 / 382001 is a CMOS m askprogram mable ROM organized as 5 2 4 ,2 8 8 w o rds by 8 -b it C X K 3 8 4 0 0 1 and 2 6 2 ,1 4 4 w o rds by 8-bit (C X K 382001). The chip enable

CXK1206AM

Abstract: SONY CX CXK1206 lr2d CXK1206ATM
Contextual Info: SONY. CXK1206AM/ATM Video Signal Field Memory D escription C XK 1206A M The C X K 1 2 0 6 A M /A T M is a 3 -p o rt VRAM capable o f coping w ith bo th NTSC and PAL and o f s to rin g pictures fo r one 8-bit field w ith tw o chips, and is suitable as a m em ory fo r im proving

NEC D2732

Abstract: 41C1000 41256 81c4256 6264 SRAM 44256 dram NEC 2732 nec 4217400 814400 Texas Instruments eprom 2732
Contextual Info: New Page 1 DRAM ORGANIZATION/ DENSITY FUJISTU GOLDSTAR HITACHI HYNDAI MB GM HM HY 256K x 1 256K 81256 71C256 51256 MICRON MT 53C256 1256 MITSUBISHI M5M 4256 1M x 1(1M) 81C1000 71C1000 511000 531000 4C1024 41000 256K x 4(1M) 81C4256 71C4256 514256 534256 4C4256

2551 vn

Abstract: CXK581120J-15 CXK581120J-12 CXK581120J-17 CXK581120J-20 924i sony aw 15
Contextual Info: 5 4E » 6302303 SO N Y . O O tm S ñ T lb «SO N Y -12/15/20 CXK581120J PRELIMINARY 131,072-WORD X 8-BIT HIGH SPEED CMOS STATIC RAM D ESC R IPTIO N SONY 7 C O R P/C O M PO N E N T PROPS CXK581120J 32 PIN SOJ PLASTIC T he C X K 581120J is a h ig h speed lM -b it CM OS sta tic RAM

5.1 sony

Abstract: CXK58258
Contextual Info: SONY» CXK58258P/SP -35/45/55 32768-word x 8-bit High Speed CMOS Static RAM Description C X K 5 8 2 5 8 P /S P are 262,144 bits high speed CMOS sta tic RAMs suitable fo r use in high speed and lo w power applications. Organized as 3 2 ,7 6 8 w ords by 8 -b it, it operates from a

Contextual Info: C X K 58110OTM/YM -12LB SONY 131072-word x 8-bit High Speed CMOS Static RAM Description CXK581100TM/YM is a general purpose high speed CMOS static RAM organized as 131,072 words by 8 bits. CXK581100TM 32 pin T SO P Plastic CXK581100YM 32 pin T SO P (Plastic)

CXK54256P-35

Abstract: CXK54256P-45 CXK54256P-55 sony cmos 117
Contextual Info: CXK54256P 35/45/55 SONY« 65,536-word X 4-bit High Speed CMOS Static RAM Description CXK54256P is a 2 6 2 ,1 4 4 bits high speed CMOS sta tic RAM organized as 65,536 w ords by 4 bits and operates from a single 5V supply. T his device is suitable fo r use in high speed

CXK54256P-35

Abstract: CXK54256P-45 CXK54256P-55 static ram 2015
Contextual Info: CXK54256P 35/45/55 SONY« 65,536-word X 4-bit High Speed CMOS Static RAM Description C XK54256P is a 2 6 2 ,1 4 4 bits high speed CMOS sta tic RAM organized as 65,536 w ords by 4 bits and operates from a single 5V supply. This device is suitable fo r use in high speed

Contextual Info: SONY. CXK58267AP/ASP/AM -70LU85Ll3^0LL/12LL 32768-word x 8-bit High Speed CMOS Static RAM Description C X K 5 8 2 6 7 A P /A S P /A M is 262,144 bits high speed CMOS sta tic RAM organized as 32,768 w o rds by 8 b its and operates from a single 5V supply. The C X K 5 8 2 6 7 A P /A S P /A M 's tw o chip

Contextual Info: SONY. CXK58257AP/ASP/AM -70LU85LU10LL/12LL 32768-word X 8-bit High Speed CMOS Static RAM Description C X K 5 8 2 5 7 A P /A S P /A M is 262,144 bits high speed CMOS sta tic RAM organized as 32,768 w ords by 8 bits and operates from a single 5V supply. T his device is suitable fo r use in high

CXK581020J

Contextual Info: 54E D 0365303 D0D4fl34 11T MSONY «2.3* - / y CXK581020SP/J -35/45/55 SONY 131072-word x 8-bit High Speed CMOS Static RAM S O NY CORP/COMPONENT Description P ROD S C X K 5 8 1 02 0 S P 3 2 pin DIP Plastic C X K 5 8 1 0 2 0 S P /J are 1 3 1 ,0 7 2 -w o rd x 8 -b it