CW LASER DIODE 808 NM Search Results
CW LASER DIODE 808 NM Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
| CUZ12V |
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Zener Diode, 12 V, USC | Datasheet | ||
| MUZ5V6 |
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Zener Diode, 5.6 V, USM | Datasheet | ||
| CEZ6V8 |
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Zener Diode, 6.8 V, ESC | Datasheet |
CW LASER DIODE 808 NM Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Laser Diode 808 2 pin 1000 mw
Abstract: CW laser diode 808 nm 1200 mw 808 nm 1000 mw 808 nm 1000 mw laser diode
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LCG-808-1000M-9N lcg-808-1000m-9n Laser Diode 808 2 pin 1000 mw CW laser diode 808 nm 1200 mw 808 nm 1000 mw 808 nm 1000 mw laser diode | |
GDOY7041Contextual Info: Aktiv gekühlter Diodenlaser-Barren, 60 W cw bei 808 nm Actively Cooled Diode Laser Bar, 60 W cw at 808 nm SPL E01N81G2 Vorläufiges Datenblatt / Preliminary Data Sheet Besondere Merkmale Features • Laserbarren auf Mikrokanalkühler • Für Dauerstrich- CW und |
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E01N81G2 GDOY7041 | |
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Contextual Info: Preliminary Data Sheet High Power CW Laser Diode LCG-808-1000M-9N Features - High-efficiency MQW structure Wavelength: 808 nm Typ. Optical Power: 1000 mW, CW Integrated Monitordiode Standard Package: 9 mm ∅ Applications - Medical Printing Material Processing |
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LCG-808-1000M-9N LCG-808-1000M-9N | |
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Contextual Info: High Power CW Laser Diode LCG-808-1000M-9N FEATURES High-efficiency MQW structure Wavelength: 808 nm Typ. Optical Powrer: 1000 mW, CW Integrated Monitordiode Standard Package: 9 mm ∅ APPLICATIONS Medical Printing Material Processing Illumination Measurement |
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LCG-808-1000M-9N lcg-808-1000m-9n | |
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Contextual Info: High Power CW Laser Diode LCG-808-1000M-9N FEATURES High-efficiency MQW structure Wavelength: 808 nm Typ. Optical Powrer: 1000 mW, CW Integrated Monitordiode Standard Package: 9 mm ∅ APPLICATIONS Medical Printing Material Processing Illumination Measurement |
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LCG-808-1000M-9N lcg-808-1000m-9n | |
GDOY7042Contextual Info: Aktiv gekühlter Diodenlaser-Barren, 1200 W cw bei 808 nm Actively Cooled Diode Laser Bar, 1200 W cw at 808 nm SPL E20N81G2 Vorläufiges Datenblatt / Preliminary Data Sheet Besondere Merkmale Features • Laserstack mit 20 Laserbarren auf Mikrokanalkühler |
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E20N81G2 GDOY7042 | |
E10N81G2
Abstract: GDOY7043 coolant
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E10N81G2 E10N81G2 GDOY7043 coolant | |
GDOY7031Contextual Info: Aktiv gekühlter Diodenlaser-Barren, 180 W cw bei 808 nm Actively Cooled Diode Laser Bar, 180 W cw at 808 nm SPL E03N81G2 Vorläufiges Datenblatt / Preliminary Data Sheet Besondere Merkmale Features • Laserstack mit 3 Laserbarren auf Mikrokanalkühler • Für Dauerstrich- CW und |
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E03N81G2 GDOY7031 | |
GDOY7041Contextual Info: Aktiv gekühlter Diodenlaser-Barren, 60 W cw bei 808 nm Actively Cooled Diode Laser Bar, 60 W cw at 808 nm SPL E01Y81G2 Vorläufiges Datenblatt / Preliminary Data Sheet Besondere Merkmale Features • Kollimierte Laserstrahlung durch FAC-Linse • Laserbarren auf Mikrokanalkühler |
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E01Y81G2 GDOY7041 | |
GDOY7044
Abstract: MATERIAL SAFETY
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MY81S9 GDOY7044 MATERIAL SAFETY | |
GDOY7044Contextual Info: Passiv gekühlter Diodenlaser-Barren, 35 W cw bei 808 nm Passively Cooled Diode Laser Bar, 35 W cw at 808 nm SPL MY81X2 Vorläufiges Datenblatt / Preliminary Data Sheet Besondere Merkmale Features • Kollimierte Strahlung durch FAC-Linse • Laserbarren auf passiv gekühlter |
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MY81X2 GDOY7044 | |
GDOY7044Contextual Info: Passiv gekühlter Diodenlaser-Barren, 45 W cw bei 808 nm Passively Cooled Diode Laser Bar, 45 W cw at 808 nm SPL MY81G2 Vorläufiges Datenblatt / Preliminary Data Sheet Besondere Merkmale Features • Kollimierte Strahlung durch FAC-Linse • Laserbarren auf passiv gekühlter |
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MY81G2 GDOY7044 | |
GDOY7030Contextual Info: Passiv gekühlter Diodenlaser-Barren, 50 W cw bei 808 nm Passively Cooled Diode Laser Bar, 50 W cw at 808 nm SPL MN81G2 Vorläufiges Datenblatt / Preliminary Data Sheet Besondere Merkmale Features • Laserbarren auf passiv gekühlter Wärmesenke, kein Kühlwasser erforderlich |
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MN81G2 GDOY7030 | |
GDOY7030Contextual Info: Passiv gekühlter Diodenlaser-Barren, 40 W cw bei 808 nm Passively Cooled Diode Laser Bar, 40 W cw at 808 nm SPL MN81X2 Vorläufiges Datenblatt / Preliminary Data Sheet Besondere Merkmale Features • Laserbarren auf passiv gekühlter Wärmesenke, kein Kühlwasser erforderlich |
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MN81X2 GDOY7030 | |
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Contextual Info: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS High Power Diode Laser Bars 808 nm, 80 W cw JDL-BAB-50-47-808-TE-80-2.0 Features: Applications: • High laser power • Pumping of solid-state lasers and fiber lasers |
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JDL-BAB-50-47-808-TE-80-2 | |
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Contextual Info: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS High Power Diode Laser Bars 808 nm, 60 W cw JDL-BAB-30-19-808-TE-60-2.0 Features: Applications: • High laser power • Pumping of solid-state lasers and fiber lasers |
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JDL-BAB-30-19-808-TE-60-2 | |
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Contextual Info: Passively Cooled Diode Laser Bar, 45 W cw at 808 nm SPL MY81G2 Preliminary Data Sheet Features Applications • Fast-axis collimated radiation • Laser bar mounted on passive mount, no water required • For continuous wave cw and quasi continuous wave (qcw) operation |
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MY81G2 | |
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Contextual Info: Passively Cooled Diode Laser Bar, 45 W cw at 808 nm SPL MY81G2 Preliminary Data Sheet Features Applications • Fast-axis collimated radiation • Laser bar mounted on passive mount, no water required • For continuous wave cw and quasi continuous wave (qcw) operation |
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MY81G2 MN81G2 Q65110A6235 200ny | |
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Contextual Info: Actively Cooled Diode Laser Bar, 60 W cw at 808 nm SPL E01N81G2 Preliminary Data Sheet Features Applications • Micro channel cooled laser bar • For continuous wave cw and quasi continuous wave (qcw) operation • Highly reliable InGa(Al)As/GaAs material with |
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E01N81G2 | |
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Contextual Info: Passively Cooled Diode Laser Bar, 35 W cw at 808 nm SPL MY81X2 Preliminary Data Sheet Features Applications • Fast-axis collimated radiation • Laser bar mounted on passive mount, no water required • For continuous wave cw and quasi continuous wave (qcw) operation |
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MY81X2 Q65110A4157 200ny | |
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Contextual Info: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS High Power Diode Laser Bars 808 nm, 60 W cw JDL-BAB-50-47-808-TE-60-1.5 Features: Applications: • High laser power • Pumping of solid-state lasers and fiber lasers |
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JDL-BAB-50-47-808-TE-60-1 | |
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Contextual Info: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS High Power Diode Laser Bars 808 nm, 40 W cw JDL-BAB-30-19-808-TE-40-1.0 Features: Applications: • High laser power • Pumping of solid-state lasers and fiber lasers |
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JDL-BAB-30-19-808-TE-40-1 | |
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Contextual Info: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS High Power Diode Laser Bars 808 nm, 60 W cw JDL-BAB-20-19-808-TE-60-2.0 Features: Applications: • High laser power • Pumping of solid-state lasers and fiber lasers |
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JDL-BAB-20-19-808-TE-60-2 | |
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Contextual Info: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS High Power Diode Laser Bars 808 nm, 40 W cw JDL-BAB-50-47-808-TE-40-1.0 Features: Applications: • High laser power • Pumping of solid-state lasers and fiber lasers |
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JDL-BAB-50-47-808-TE-40-1 | |