CW 180 Search Results

BC10 npn transistor

Abstract: BC848C BC846 BC846A BC846B BC847 BC847A BC847B BC848
Contextual Info: BC846AW/BW/CW BC847AW/BW/CW BC848AW/BW/CW General Purpose Transistor NPN Silicon COLLECTOR 3 1 BASE 3 1 2 2 EMITTER SOT-323 SC-70 M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage

Contextual Info: BC846AW/BW/CW BC847AW/BW/CW BC848AW/BW/CW General Purpose Transistor NPN Silicon COLLECTOR 3 1 BASE * “G” Lead Pb -Free 3 1 2 2 EMITTER SOT-323(SC-70) M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage

triac BTA 140

Abstract: TRIAC BTA 137 TRIAC BTA 312 triac BTA 12 600 CW TRIAC BTa 12 600 BW bta 700 triac BTA 80 BTA 800 ST BTA 800 TRIAC BTA 20 600 BW
Contextual Info: BTA24BW/CW BTB24BW/CW SNUBBERLESS TRIACS . . . FEATURES HIGH COMMUTATION : dI/dt c > 22A/ms without snubber HIGH SURGE CURRENT : ITSM = 250A VDRM UP TO 800V BTA family: Insulated voltage = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION G The BTA/BTB24 BW/CW triac family are high performance glass passivated chips technology.

Contextual Info: RLT1800-500HHL TECHNICAL DATA High Power Infrared Laser Diode Features Applications • • • • 500 mW CW Ouput Power 1.79 – 1.81 µm Emission Wavelength Medical Usage Scientific and research Specifications 25°C Item Laser Diode CW Output Power Emitting area

Contextual Info: 2.5 x 2.0 x 1.2mm BUILT-IN CAPACITANCE CERAMIC RESONATOR AWSCR-CW Pb in ceramic exempt per RoHS 2002/95/EC Annex (7 FEATURES: AWSCR-CW RoHS Compliant 2.5 x 2.0 x 1.2mm | | | | | | | | | | | | | | | APPLICATIONS: • Low resonant impedance • Built-in load capacitors

BC846

Abstract: BC846A BC846B BC847 BC847A BC847B BC848 marking tA2
Contextual Info: BC846AW/BW BC847AW/BW/CW BC848AW/BW/CW General Purpose Transistor NPN Silicon P b Lead Pb -Free COLLECTOR 3 3 1 1 BASE 2 EMITTER Maximum Ratings (TA=25°C Unlesso therwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage

laser DFB 1550nm 10mW

Abstract: FOL15TCWA-A fol15tc ODC-4R001B 1550nm 10mW dfb 1550nm TSET25 FOL15TCWA FOL15TCW
Contextual Info: Data Sheet FOL15TCWA-A*-*-* 10mW 1550nm CW Thermally Tunable DFB Laser Module Date February 16, 2005 ODC-4R001B 10mW 1550nm CW Thermally Tunable DFB Laser Module Applications • OC-192/STM-64 DWDM Transmission Systems Features • 100GHz spacing x 4ch 2.4nm Tunability available

Contextual Info: NPTB00025 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz

Contextual Info: SGS-THOMSON BTB24 BW/CW SNUBBERLESS TRIACS FEATURES • HIGH COMMUTATION : dlAJt c > 22A/ms without snubber ■ HIGH SURGE CURRENT : IjS M = 250A ■ VDrm UP TO 800V DESCRIPTION The BTB24 BW/CW triac family are high perform­ ance glass passivated chips technology.

5378-JDSU

Abstract: Laser Head XCYTE JDS Uniphase umbilical connector TEM00 RS-232C umbilical JDSU laser power supply RS232CON
Contextual Info: COMMERCIAL LASERS Quasi-Continuous Wave CW UV Laser Xcyte Series Key Features • • • • • • • • • 355 nm outputs available Quasi-CW UV output Field-proven Direct-Coupled Pump (DCP ) TEM00 mode quality Light-regulated output power level RS232-controllable

2222A

Abstract: AT-38086 AT-38086-BLK AT-38086-TR1
Contextual Info: 4.8 V NPN Silicon Bipolar Common Emitter Transistor Technical Data AT-38086 Features • 4.8 Volt Pulsed pulse width = 577 µsec, duty cycle = 12.5% /CW Operation 85 mil Plastic Surface Mount Package Outline 86 • +28 dBm Pulsed Pout @ 900 MHz, Typ. • +23.5 dBm CW Pout

Contextual Info: NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3300 - 3800 MHz • 18W P3dB CW Power • 25W P3dB peak envelope power

pj 3059

Abstract: UG-704 UG-709 UG-573 HN-P-8U UG-556 UG-706 PJ-55 PJ59 1E54
Contextual Info: IMilitary Cross Reference M IL IT A R Y J IS N U M B ER N U M B ER CW- i 23/U | 8N C -C for fem ale C W - I2 3 A /U | 8N C -C (for fem ale) L DD K ¡ P a rt no ! j PAG E 2001 CW- 155/U BNC-C(for fem ale) - C W - I5 5 A /U BNC-C(for fem aie) 2565 CW- 1S9/U

Contextual Info: NPT1012 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC-4000MHz • 25W P3dB CW power at 3000MHz • 16-20W P3dB CW power from 1000-2500MHz in

Laser SDL 980

Abstract: Laser SDL
Contextual Info: M Ë ¡3 m S E R I E S t 03 980 nmr 150 mW CW InGaAs LASER DIODES 3 le y Features 980 nm Output Single Transverse Mode 150 mW cw Power Proven High Reliability Demonstrated High Coupling Effciency Erbium-Doped Fiber Amplifier Pumps Diffraction Limited Beam

TP-105

Abstract: TP-122 TE11 TP105 TP-117 TP-118 105 Thyratron thyratron water gas separator 832 tetrode
Contextual Info: Return To Product Page S93419E Power Tetrode VHF Linear Beam Power Tetrode • Full Input to 300 MHz Liquid Cooled Anode • 125 kW CW Power Output 16dB Gain 75% Efficiency The BURLE S93419E is designed specifically for use in high-gain, high efficiency, high linearity VHF CW

NPT1012

Abstract: NPT1012B AC200BM-F2 AC200B
Contextual Info: NPT1012 Preliminary Datasheet Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC-4000MHz • 25W P3dB CW power at 3000MHz • 20-25W P3dB CW power from 1000-2500MHz in

Contextual Info: NPT1010 Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz • 60-95 W PSAT CW power from 500-1000MHz in

Contextual Info: BC846AW/BW BC847AW/BW/CW BC848AW/BW/CW General Purpose Transistor NPN Silicon P b Lead Pb -Free COLLECTOR 3 3 1 1 BASE 2 2 EMITTER SOT-323(SC-70) Maximum Ratings (TA=25°C Unlesso therwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage

rca 7708

Abstract: an 6161 TS-2150 rca 645 RCA RF power devices 100J
Contextual Info: 6161 UHF POWER TRIODE Small Size Coaxial Elec­ trode Structure Forced-Air-Cooled, Grounded-Grid Type 400 Watts CW Input to 900 Me 250 Watts CW Input at 2000 Me 3-13/32" Max. Length 1.760" Max. Diameter Integral Radiator TE NTA TIV E DATA RCA-6I6I is a very

Contextual Info: NPT1010 Datasheet Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz • 60-95 W PSAT CW power from 500-1000MHz in

Contextual Info: OS-IN-2007-007 Productlist Introduction of new Lens Design for OSTAR Lighting Products affected: LE W E2B LE CW E2B LE W E3B LE CW E3B OSRAM Opto Semiconductors GmbH Wernerwerkstr.2 D-93049 Regensburg OS-IN-2007-007-A CIP Introduction of new Lens Design for OSTAR Lighting

4CX250B

Abstract: 4X250B amplifier 4cx250b 4cx250 G2L 113 cx250b 4cx250B tube CCS11 4X250 HAI+7203
Contextual Info: 7203/4CX250B Beam Power Tube FORCED-AIR COOLED CERAMIC-METAL SEALS 400 WATTS CW OUTPUT TO 175 Me COAXIAL-ELECTRODE STRUCTURE 250 WATTS CW OUTPUT AT 500 He COMPACT DES IGN INTEGRAL RADIATOR For Use at Frequencies up to 500 Me The 72 0 3 i s b ila te ra lly

TP-118

Abstract: TP-105 TP-122 A 4661 cermolox
Contextual Info: Return To Product Page 4661 Power Tube CERMOLOX Beam Power Tube • • • • • • • Ruggedized Reliable Forced-Air Cooled Matrix Cathode Full Input to 400 MHz Over 1000 Watts CW FM Over 250 Watts CW AM Linear BURLE 4661 is designed to meet the low noise and