CW 180 Search Results

BGF944

Abstract: BGY916 BGY925 BGY2016 BGF1801-10 BGF1901-10
Contextual Info: CELLULAR BASESTATIONS CROSS REFERENCE LIST BIPOLAR vs LDMOS RF POWER MODULES BIPOLAR LDMOS Mode of operation f MHz VS1; VS2 (V) CW CW CW CW CW CW CW CW CW CW CW CW 920 to 960 920 to 960 920 to 960 920 to 960 920 to 960 920 to 960 920 to 960 920 to 960 1805 to 1990

fld3c2pj

Abstract: FSX51 FLD5F6CX FMM362HE Fujitsu FLD5F6CX FLD148G3NL FRM5W231DR 382CG single frequency laser 1550 butterfly FMM381CG
Contextual Info: LIGHTWAVE COMPONENTS & M ODULES LASER DIODE MODULES OPTICAL AND ELECTRICAL CHARACTERISTICS TL = 25°C or Tc = 25°C Part Number Ith (mA) Vf (V) CW CW (typ) If = Pf Pth (mW) (mW) CW (min.) CW dF=lth) CW at Pf VDR=5V - 0.2 9* en •> 3.0 (lp=600 mA) o o o o

vcsel 100w

Abstract: princeton optronics class iv laser
Contextual Info: Multichip VCSEL Array Module 180W-CW Part # PCW-MC-180-W0808 • Vertical-Cavity Surface-Emitting Laser technology • Twelve 15W CW chips mounted together total CW power 180W • 808nm wavelength • Stackable in one direction • Custom wavelengths available (8081064nm)

DRUCK 910

Abstract: GDOY7031
Contextual Info: Aktiv gekühlter Diodenlaser-Barren, 180 W cw bei 915 nm Actively Cooled Diode Laser Bar, 180 W cw at 915 nm SPL E03N91G2 Vorläufiges Datenblatt / Preliminary Data Sheet Besondere Merkmale Features • Laserstack mit 3 Laserbarren auf Mikrokanalkühler • Für Dauerstrich- CW und

GDOY7031

Contextual Info: Aktiv gekühlter Diodenlaser-Barren, 180 W cw bei 808 nm Actively Cooled Diode Laser Bar, 180 W cw at 808 nm SPL E03N81G2 Vorläufiges Datenblatt / Preliminary Data Sheet Besondere Merkmale Features • Laserstack mit 3 Laserbarren auf Mikrokanalkühler • Für Dauerstrich- CW und

0280 130 085

Abstract: CWP41 P339 CWP41-12 CWP71 thyristor MT431-50-12
Contextual Info: Phase Control Thyristor Chips CW P CW P 7 - 08/125' 8-08/12 CW P 16-12/16 CW P 22 -12/16 CW P 25-12/16 Hr?Wr & ws*c as-c V mA mA A 800 - 1200 800 - 1200 1 1 25 30 1.45 1.55 20 44 0.90 32.0 0.90 18.0 200 300 10 19 2.3 1.65 326 229 2 1 1200 - 1600 1200 - 1600

Contextual Info: ROCKER AND POWER SLIDE SWITCHES 2000-B/06 CW INDUSTRIES. . . CW INDUSTRIES. . . Reliability by Design Imagination by Design For more than eighty years, CW has provided innovative products through automated manufacturing and quality assurance techniques unmatched in

CW65

Contextual Info: BCW65 BCW66 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 - AUGUST 1935_ P A R T M A R K IN G D E T A IL S B C W 65A - EA B CW 65A R - BCW 65B - EB B C W 65B R - 4V 5V B CW 65C - EC B C W 65C R - 6V B CW 66F - EF B CW 66FR -

BC10 npn transistor

Abstract: BC848C BC846 BC846A BC846B BC847 BC847A BC847B BC848
Contextual Info: BC846AW/BW/CW BC847AW/BW/CW BC848AW/BW/CW General Purpose Transistor NPN Silicon COLLECTOR 3 1 BASE 3 1 2 2 EMITTER SOT-323 SC-70 M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage

BLF1822-30

Abstract: BGY916 CDMA-120 BGF1801-10 BGF802-20 BGF944 BLF2022-40 blf2043 BGF1901-10 BGF844
Contextual Info: CELLULAR BASESTATIONS RF POWER TRANSISTORS & MODULES For All Cellular Standards RF POWER MODULES Mode of Operation PL W CW CDMA CW EDGE 20 3 avg 20 4 avg SOT365C CW EDGE BGY916 BGY915/5 BGY925 BGY925/5 SOT365A SOT365A SOT365A SOT365A BGF1801-10 SOT365C BGF1901-10

Contextual Info: BC846AW/BW/CW BC847AW/BW/CW BC848AW/BW/CW General Purpose Transistor NPN Silicon COLLECTOR 3 1 BASE * “G” Lead Pb -Free 3 1 2 2 EMITTER SOT-323(SC-70) M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage

TRIAC BTA 137

Abstract: bta 137 triacs btb 15 700 triac BTA 140 TRIAC BTB 16 600 BW BTA 600 btb 15 600 b C22A TRIAC 137 BTA24B
Contextual Info: BTA24BW/CW BTB24BW/CW  SNUBBERLESS TRIACS . . . FEATURES HIGH COMMUTATION : dI/dt c> 22A/ms without snubber HIGH SURGE CURRENT : ITSM = 250A VDRM UP TO 800V BTA family: Insulated voltage = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION G The BTA/BTB24 BW/CW triac family are high performance glass passivated chips technology.

triac BTA 140

Abstract: TRIAC BTA 137 TRIAC BTA 312 triac BTA 12 600 CW TRIAC BTa 12 600 BW bta 700 triac BTA 80 BTA 800 ST BTA 800 TRIAC BTA 20 600 BW
Contextual Info: BTA24BW/CW BTB24BW/CW SNUBBERLESS TRIACS . . . FEATURES HIGH COMMUTATION : dI/dt c > 22A/ms without snubber HIGH SURGE CURRENT : ITSM = 250A VDRM UP TO 800V BTA family: Insulated voltage = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION G The BTA/BTB24 BW/CW triac family are high performance glass passivated chips technology.

833A tube

Abstract: triode 833a 833A Triode pl 833 Power Triode tube 833a 833 triode tca 780 triode FU 33 833-A
Contextual Info: 833A Power Triode THORIATED-TUNGSTEN F I LAMENT RUGGED STRUCTURE ZIRCON IUH-COATED ANODE POST TERMINALS 1250 WATTS CW INPUT CCS TO 30 Me WITH NATURAL COOLING 1800 WATTS CW INPUT (CCS) TO 20M cW IT H FORCED-AIR COOLING GENERAL DATA E le c t r ic a l: F i la m e n t , T h o r i a t e d T un gsten :

Contextual Info: Actively Cooled Diode Laser Stack, 180 W cw at 915 nm SPL E03N91G2 Preliminary Data Sheet Features Applications • Micro channel cooled laser stack with 3 bars • For continuous wave cw and quasi continuous wave (qcw) operation • Highly reliable InGa(Al)As/GaAs material with

Contextual Info: Actively Cooled Diode Laser Stack, 180 W cw at 808 nm SPL E03N81G2 Preliminary Data Sheet Features Applications • Micro channel cooled laser stack with 3 bars • For continuous wave cw and quasi continuous wave (qcw) operation • Highly reliable InGa(Al)As/GaAs material with

Contextual Info: Actively Cooled Diode Laser Stack, 180 W cw at 808 nm SPL E03N81G2 Preliminary Data Sheet Features Applications • Micro channel cooled laser stack with 3 bars • For continuous wave cw and quasi continuous wave (qcw) operation • Highly reliable InGa(Al)As/GaAs material with

Contextual Info: High Power CW Laser Diode LCG-808-1000M-9N FEATURES High-efficiency MQW structure Wavelength: 808 nm Typ. Optical Powrer: 1000 mW, CW Integrated Monitordiode Standard Package: 9 mm ∅ APPLICATIONS Medical Printing Material Processing Illumination Measurement

Contextual Info: High Power CW Laser Diode LCG-808-1000M-9N FEATURES High-efficiency MQW structure Wavelength: 808 nm Typ. Optical Powrer: 1000 mW, CW Integrated Monitordiode Standard Package: 9 mm ∅ APPLICATIONS Medical Printing Material Processing Illumination Measurement

Contextual Info: Preliminary Data Sheet High Power CW Laser Diode LCG-808-1000M-9N Features - High-efficiency MQW structure Wavelength: 808 nm Typ. Optical Power: 1000 mW, CW Integrated Monitordiode Standard Package: 9 mm ∅ Applications - Medical Printing Material Processing

BC856BW

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-323 Plastic-Encapsulate Transistors BC856AW, BW TRANSISTOR BC857AW, BW,CW BC858AW, BW,CW PNP SOT-323 1. BASE FEATURES y Ideally suited for automatic insertion y For Switching and AF Amplifier Applications

Laser Diode 808 2 pin 1000 mw

Abstract: CW laser diode 808 nm 1200 mw 808 nm 1000 mw 808 nm 1000 mw laser diode
Contextual Info: High Power CW Laser Diode LCG-808-1000M-9N FEATURES High-efficiency MQW structure Wavelength: 808 nm Typ. Optical Power: 1000 mW, CW Integrated Monitor Diode Standard Package: 9 mm ∅ APPLICATIONS Medical Printing Material Processing Illumination Measurement

Contextual Info: Limit Switches SinglePole StandardEnvironment Super Sealed • • • • • Limit Switches Multiple Contacts — SPDT Epoxy Sealed Generous Overtravel Heavy Duty Cam Operated Flexibility of Motion CW, CCW and CW/CCW Butt Contacts Wide range of operation.modular

Contextual Info: QQ-44 Digitally Controlled Analog Phase Shifters Features • 8 bit Digital logic standard • Octave bands up to 18 GHz • RF power operation 10mW peak/CW, RF power survival 100mW peak/CW • Custom configurations available Speciications: Parameter Speciication