CURRENT LIMITING DIODES FET Search Results

cross reference zener diodes

Abstract: power transistors cross reference GERMANIUM SMALL SIGNAL TRANSISTORS
Contextual Info: Table off Contents Page Index / Cross Reference 2 Surface Mounted Devices 47 Small Signal Transistors 65 Power Transistors 93 Junction FETs 109 Silicon Diodes 113 Germanium Diodes 117 Zener Diodes 119 Current Limiting Diodes 135 Rectifiers 157 Bridge Rectifiers

Current limiting diodes

Abstract: staircase generator circuit PCI9030 N-Channel jfet 100V depletion CCLH080 CCLH150 ccl0035-ccl5750
Contextual Info: 49 Semiconductor Practical Applications of Current Limiting Diodes Edited by Aimee Kalnoskas, Editor-In-Chief by Sze Chin, Central Semiconductor Corp. he current limiting diode CLD or current regulating diode (CRD) has been available since the early 1960’s. Unfortunately, despite its simplicity and distinct advantages over conventional

BUK9120-48TC

Abstract: SOT426
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Voltage clamped logic level FET with temperature sensing diodes BUK9120-48TC GENERAL DESCRIPTION Protected N-channel enhancement mode logic level field-effect power transistor in a plastic envelope

Contextual Info: MAX1551/MAX1555 SOT23 Dual-Input USB/AC Adapter 1-Cell Li+ Battery Chargers LE AVAILAB General Description The MAX1551/MAX1555 charge a single-cell lithium-ion Li+ battery from both USB and AC adapter sources. They operate with no external FETs or diodes, and

BUK7L06-34ARC

Contextual Info: BUK7L06-34ARC TrenchPLUS standard level FET Rev. 02 — 21 May 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance, integral gate

PA08U

Contextual Info: PA08PA08 • PA08A • PA08A PA08, PA08A Power Operational Amplifier FEATURES • WIDE SUPPLY RANGE — ±15V to ±150V • PROGRAMMABLE OUTPUT CURRENT LIMIT • HIGH OUTPUT CURRENT — Up to ±150mA • LOW BIAS CURRENT — FET Input APPLICATIONS • HIGH VOLTAGE INSTRUMENTATION

Contextual Info: • PA08A PA08PA08 • PA08A PA08, PA08A Power Operational Amplifier FEATURES • WIDE SUPPLY RANGE — ±15V to ±150V • PROGRAMMABLE OUTPUT CURRENT LIMIT • HIGH OUTPUT CURRENT — Up to ±150mA • LOW BIAS CURRENT — FET Input APPLICATIONS • HIGH VOLTAGE INSTRUMENTATION

BUK7L11-34ARC

Contextual Info: BUK7L11-34ARC TrenchPLUS standard level FET Rev. 02 — 22 May 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance, integral gate

BUK7L06-34ARC

Contextual Info: BUK7L06-34ARC TrenchPLUS standard level FET Rev. 03 — 3 December 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance, integral gate

BUK7L11-34ARC

Abstract: MBL521 buk7l11
Contextual Info: BUK7L11-34ARC TrenchPLUS standard level FET Rev. 03 — 3 December 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance, integral gate

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION PIN SYMBOL PARAMETER Drain-source voltage Drain current DC Tsp = 25 °C Drain current (DC) Tamb = 25 °C Total power dissipation Junction temperature

Contextual Info: Philips Semiconductors Product specification PHP55N03T TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level tield-ettect power transistor in a plastic envelope using ’trench’ technology. The device teatures very low on-state resistance

BF997

Abstract: Dual-Gate Mosfet dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF997 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF997 FEATURES DESCRIPTION • Protected against excessive input voltage surges by

BF989

Abstract: Dual-Gate Mosfet dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF989 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF989 FEATURES DESCRIPTION • Protected against excessive input voltage surges by

BF990A

Abstract: mosfet handbook Dual-Gate Mosfet philips mosfet dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF990A N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF990A FEATURES DESCRIPTION • Protected against excessive input voltage surges by

SOT103

Abstract: transistor SOT103 mosfet BF902 marking C1s philips mosfet
Contextual Info: P H ILIP S INTER NATIONAL 41E D B 7110â2b OQEtfl'ÎS T « ¡P H IN T-31-25 Philips S em iconductors Preliminary specification Silicon n-channel dual gate MOS-FET FEATURES • • BF902 QUICK REFERENCE DATA Short channel transistor with high ratio IYtsl:Cls

BUK7105-40AIE

Contextual Info: BUK7105-40AIE N-channel TrenchPLUS standard level FET Rev. 05 — 9 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing

BUK7909-75AIE

Contextual Info: BUK7909-75AIE N-channel TrenchPLUS standard level FET Rev. 02 — 17 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing

BUK7109-75AIE

Abstract: D2Pak Package dimensions
Contextual Info: BUK7109-75AIE N-channel TrenchPLUS standard level FET Rev. 02 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing

BUK7107-55AIE

Contextual Info: BUK7107-55AIE N-channel TrenchPLUS standard level FET Rev. 02 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing

BUK7907-55AIE

Contextual Info: BUK7907-55AIE N-channel TrenchPLUS standard level FET Rev. 02 — 9 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing

mO2 marking transistor

Abstract: fet dual gate sot143 BF901 marking 550 sot143 SS MARKING CODE BF901R n-channel dual gate MAM040 PHILIPS dual gate mosfets DUAL GATE MOSFET VHF AMPLIFIER N-CHANNEL
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF901; BF901R Silicon n-channel dual gate MOS-FETs Product specification File under Discrete Semiconductors, SC07 November 1992 Philips Semiconductors Product specification Silicon n-channel dual gate MOS-FETs FEATURES BF901; BF901R

BUK7108-40AIE

Abstract: 03nn71
Contextual Info: BUK7108-40AIE N-channel TrenchPLUS standard level FET Rev. 03 — 19 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing

BUK7105-40ATE

Contextual Info: BUK7105-40ATE N-channel TrenchPLUS standard level FET Rev. 02 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for