CURRENT FALL TIME OF IGBT Search Results

SCHEMATIC WITH IGBTS

Abstract: AN8603 thyristor rca MOS-Gated Thyristor Abstract schematic power transistor
Contextual Info: Harris Semiconductor No. AN8603.2 Harris Power MOSFETs December 1993 Improved IGBTs with Fast Switching Speed And High-Current Capability Authors: A.M. Goodman, J.R. Russell, L.A. Goodman, C.J. Nuese and J.M. Neilson Abstract Conventional vertical power MOSFETs are limited at high

"MOSFET Drivers"

Contextual Info: ~ Semiconductor, Inc. TC4421 TC4422 9A HIGH-SPEED MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC4421/4422 are large buffer/drivers built using TelCom Semiconductor1proprietary Tough CMOS process. They can drive the largest MOSFETs and IGBTs now

G34N100E2

Abstract: AN7254 AN7260 HGTG34N100E2
Contextual Info: HGTG34N100E2 S E M I C O N D U C T O R 34A, 1000V N-Channel IGBT April 1995 Features Package • 34A, 1000V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time - 710ns EMITTER COLLECTOR GATE COLLECTOR BOTTOM SIDE METAL • High Input Impedance

FAN7080C

Abstract: FAN7080
Contextual Info: FAN7080_F085 Half Bridge Gate Driver Features Description • Qualified to AEC Q100 The FAN7080_F085_F085 is a half-bridge gate drive IC with reset input and adjustable dead time control. It is designed for high voltage and high speed driving of MOSFET or IGBT, which

CMI-12024SI

Contextual Info: Preliminary COMPOSITE MODULES INCORPORATED Single N-Channel IGBT In A Hermetic TO-258 Package CMI-12024SI Features: u u u u u u SMALL CASE SIZE HIGH INPUT IMPEDANCE HERMETIC PACKAGE LOW Vsat FAST SWITCHING AVAILABLE WITH FREE WHEELING DIODE u ISOLATED PACKAGE

dc-dc power converter IGBT 10kW

Abstract: optocoupler based isolated ac to dc converter VLA500K-01R dc servo igbt diagram 10kw dc-dc isolated dc-to-dc converter high side IGBT driver optocoupler VLA500K IGBT application notes 10KW optocoupler based isolated dc to dc converter
Contextual Info: VLA500K-01R Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 A Hybrid IC IGBT Gate Driver + DC/DC Converter C B D E F D 19 VCC 1 VD G 30 1 2 REGULATOR DETECT CIRCUIT DC-AC CONVERTER 29 ttrip CONTROL PIN 30 DETECT PIN 20 GND

IGBT 50 amp 1000 volt

Abstract: 10 amp igbt 1000 volt OM6517SA OM6526SA transistor tc 144
Contextual Info: 0M 6517SA OM6526SA INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-254AA PACKAGE 1000 Volt, 15 And 20 Am p, N-Channel IGBT In A Herm etic Metal Package FEATURES • • • • • • • • Isolated IG BTs In A Herm etic Package High Input Im pedance

RY 227 Tf 227 10A

Abstract: APT40GF120JRD IGBT 1200V 60A
Contextual Info: APT40GF120JRD 1200V 60A E E Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.

UPS schematics

Abstract: OM6516SC OM6520SC 5.5 volt 1.5 amp. smps
Contextual Info: OM6516SC OM6520SC INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-258AA PACKAGE 1000 Volt, 25 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES • • • • • • • • Isolated IGBTs In A Hermetic Package High Input Impedance Low On-Voltage

MP 130B

Abstract: 35 VOLT 3 AMP smps schematics UPS schematics OM6527SC OM6528SC
Contextual Info: OM6527SC OM6528SC INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-258AA PACKAGE 1000 Volt, 15 Am p, N-Channel IGBT In A H erm etic Metal Package FEATURES • • • • • • • • Isolated IGBTs In A Hermetic Package High Input Impedance Low On-Voltage

10N40F1D

Abstract: 10N50F1D GE 639 transistor 10n50 10N50F1 HGTP10N50F1D GEP diode RN2512
Contextual Info: HGTP10N40F1D, HGTP10N50F1D îs j h a r r i s t u » ™ 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Aprii 1995 Package Features • 10A, 400V and 500V JEOEC TO-220AB • Latch Free Operation EMITTER • Typical Fall Time < 1.4|iS

FAST RECOVERY DIODE 200ns 8A 40V

Abstract: 6A, 100v fast recovery diode Q67040-S4340 SKA06N60 200v 1.5v 3a diode 400v 3a low vf diode
Contextual Info: Preliminary SKA06N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

K375

Abstract: MKL series vai 27 lf OM35F120PB OM45L120PB OM50F60PB OM60L60PB 50F60 60L60
Contextual Info: OM6OL6OPB OM45L120PB Preliminary Data Sheet OM50F60PB OM35F12QPB DUAL IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES High Current, High Voltage 600V And 1200V, Up To 75 Amp Dual IGBTs With FRED Diodes FEATURES • Includes Internal FRED Diode • Rugged Package Design

BT 240A

Abstract: APT30GT60BRD
Contextual Info: APT30GT60BRD A dvanced pow er Te c h n o lo g y 600V 55A Thunderbolt IG B T & FRED The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ combined with an APT free-wheeling ultra Fast Recovery Epitaxial Diode FRED offers

IRGPH40MD2

Abstract: 930 18a C479
Contextual Info: Preliminary Data Sheet PD - 9.1118 IRGPH40MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 1200V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses

IRGPH40MD2

Contextual Info: Preliminary Data Sheet PD - 9.1118 IRGPH40MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 1200V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses

FOR5J

Abstract: IG8T M57160AL-01 115V AC to 5V DC ic cm150 CM150DU-24F
Contextual Info: H YBRID 1C M57160AL-01 Hybrid IC fo r driving IG BT m odules DESCRIPTION M57160AL-01 is an optimal hybrid IC to drive trench gate IGBT module with built-in RTC. This IC is driven by two power supplies and provides the required electrical isolation between the input

Contextual Info: APTGV100H60T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 100A @ Tc = 80°C Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 90A @ Tc = 80°C 13 14 Application Q1 CR1 18 CR3 • Solar converter

k06t60

Abstract: igbt k06t60 IKA06N60T PG-TO220-3-31 Wr1c
Contextual Info: IKA06N60T TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop ® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Features • Very low VCE sat 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs

K06N60

Abstract: fast recovery diode 2a trr 200ns SKB02N60
Contextual Info: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

K30N60

Contextual Info: SKW30N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

c649 transistor

Abstract: diode c649 transistor irf 649 c650 diode C649 IRGP450UD2 IR 649 transistor 500v
Contextual Info: Preliminary Data Sheet PD - 9.1065 IRGP450UD2 UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz

fan7080

Abstract: JESD51-2 JESD51-3 Q100
Contextual Info: FAN7080_F085 Half Bridge Gate Driver Features Description • Qualified to AEC Q100 The FAN7080_F085_F085 is a half-bridge gate drive IC with reset input and adjustable dead time control. It is designed for high voltage and high speed driving of MOSFET or IGBT, which

IKD10N60R

Abstract: J-STA-020 MJ05 PG-TO-252 IKD10N60 k10r60
Contextual Info: IGBT IKD10N60R Datasheet IndustrialPowerControl IKD10N60R