CU 301 Search Results

AM200MX-CU

Abstract: S21ANG 139-2 MAG 15529
Contextual Info: AM200MX-CU High Power GaAs Power FET September 2002 Rev. 3 DESCRIPTION AMCOM’s AM200MX-CU is a part of the CU series of GaAs MESFETs. This part has a total gate width of 20mm. The AM200MX-CU is designed for high power microwave applications, operating up to 6 GHz. The CU

Contextual Info: AM072MX-CU-R High Power GaAs Power FET August 2007 Rev. 7 DESCRIPTION AM072MX-CU-R is a GaAs MESFET in high-power ceramic CU package . This part has a total gate width of 7.2mm. The AM072MX-CU-R is designed for high power microwave applications, operating up to 6 GHz. The CU

AM300MX-CU

Contextual Info: AM300MX-CU High Power GaAs Power FET January 2003 Rev. 0 DESCRIPTION AMCOM’s AM300MX-CU is part of the CU series of GaAs MESFETs. This part has a total gate width of 30mm. The AM300MX-CU is designed for high power microwave applications, operating up to 6 GHz. The CU

AM100MX-CU-R

Contextual Info: AM100MX-CU-R April 2010 Rev 7 High Power GaAs Power FET DESCRIPTION AMCOM’s AM100MX-CU-R is a part of the CU series of GaAs MESFETs. This part has a total gate width of 10mm. The AM100MX-CU-R is designed for high power microwave applications, operating up to 6GHz. The CU

AM300MX-CU-R

Contextual Info: AM300MX-CU-R April 2010 Rev 4 High Power GaAs Power FET DESCRIPTION AMCOM’s AM300MX-CU-R is part of the CU series of GaAs MESFETs. This part has a total gate width of 30mm. The AM300MX-CU-R is designed for high power microwave applications, operating up to 6GHz. The CU

AM100MX-CU

Abstract: S21ANG
Contextual Info: AM100MX-CU High Power GaAs Power FET July 2003 Rev. 2 DESCRIPTION AMCOM’s AM100MX-CU is a part of the CU series of GaAs MESFETs. This part has a total gate width of 10mm. The AM100MX-CU is designed for high power microwave applications, operating up to 6 GHz. The CU

AM150MX-CU-R

Contextual Info: AM150MX-CU-R April 2010 Rev 8 High Power GaAs Power FET DESCRIPTION AMCOM’s AM150MX-CU-R is a part of the CU series of GaAs MESFETs. This part has a total gate width of 15mm. The AM150MX-CU-R is designed for high power microwave applications, operating up to 6GHz. The CU

Contextual Info: AM300MX-CU-R High Power GaAs Power FET August 2007 Rev. 3 DESCRIPTION AMCOM’s AM300MX-CU-R is part of the CU series of GaAs MESFETs. This part has a total gate width of 30mm. The AM300MX-CU-R is designed for high power microwave applications, operating up to 6 GHz. The CU

AM072MX-CU-R

Contextual Info: AM072MX-CU-R April 2010 Rev 8 High Power GaAs Power FET DESCRIPTION AM072MX-CU-R is a GaAs MESFET in high-power ceramic CU package. This part has a total gate width of 7.2mm. The AM072MX-CU-R is designed for high power microwave applications, operating up to 6GHz. The CU

S21ANG

Abstract: AM150MX-CU
Contextual Info: AM150MX-CU High Power GaAs Power FET June 2003 Rev. 4 DESCRIPTION AMCOM’s AM150MX-CU is a part of the CU series of GaAs MESFETs. This part has a total gate width of 15mm. The AM150MX-CU is designed for high power microwave applications, operating up to 6 GHz. The CU

ANG-S21

Abstract: AM072MX-CU GaAs S2p
Contextual Info: AM072MX-CU High Power GaAs Power FET September 2002 Rev. 3 DESCRIPTION AMCOM’s AM072MX-CU is a part of the CU series of GaAs MESFETs. This part has a total gate width of 7.2mm. The AM072MX-CU is designed for high power microwave applications, operating up to 6 GHz. The CU

Contextual Info: AM100MX-CU-R High Power GaAs Power FET August 2007 Rev. 5 DESCRIPTION AMCOM’s AM100MX-CU-R is a part of the CU series of GaAs MESFETs. This part has a total gate width of 10mm. The AM100MX-CU-R is designed for high power microwave applications, operating up to 6 GHz. The CU

Contextual Info: AM200MX-CU-R High Power GaAs Power FET August 2007 Rev. 6 DESCRIPTION AMCOM’s AM200MX-CU-R is a part of the CU series of GaAs MESFETs. This part has a total gate width of 20mm. The AM200MX-CU-R is designed for high power microwave applications, operating up to 6 GHz. The CU

AM200MX-CU-R

Contextual Info: AM200MX-CU-R April 2010 Rev 7 High Power GaAs Power FET DESCRIPTION AMCOM’s AM200MX-CU-R is a part of the CU series of GaAs MESFETs. This part has a total gate width of 20mm. The AM200MX-CU-R is designed for high power microwave applications, operating up to 6GHz. The CU

filotex

Abstract: NFC 93-521 WCT filotex WCF24 19-CE filotex et KY 58 TR6420
Contextual Info: 1n FILS POUR CONNEXIONS ENROULEES Ame Référence FILOTEX Code Produit W CP 30 0 ext. mm Jauge AWG Section mm 2 0 mm nature mini maxi 83 300 30 0,05 0,254 X Cu Ag 0,52 0,58 WCT 30 83 301 30 0,05 0,254 X Cu Ag 0,52 0,58 W CZ 30 83 596 30 0,05 0,254 X Cu Ag

Contextual Info: Ergebnisseite der Teileliste Partlist 09 12 002 3011 Male insert, Han-Brid Cu < Series Number of contacts Size of hood/housing Termination Insert material Contacts Electrical data > other series Han-Brid Cu 4-poles + PE 3A Bustermination without PCB for Housing

k0353

Abstract: ROP101116 MP9801 rop101 ROP1011 rop10111 delamination leadframe 371P160C3
Contextual Info: TEXAS INSTRUMENTS Informational Notification of Leadframe Coating and Solder Plate Changes for PLCC Packages July 17, 1996 Abstract As part of our continuing efforts to improve the quality and reliability of lead finish on our Plastic Leaded Chip Carrier PLCC products, Texas Instruments. will convert from Cu/Ni coated to Cu/Cu

Contextual Info: SK13GD063 C- R PO S$@ 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT T$LA CU R PO S$ E$ CU R XPO S$ E$[¥ *'-) MWW T XY Z C- R YW S$ XN Z PW Z ] PW T CU R XPO S$ XW a- C- R PO S$ PP Z C- R YW S$ XO Z E$[¥R P : E$0%& T$$ R NWW T^ TFL _ PW T^

Contextual Info: SK45GD063 C- R PO S$@ 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT T$LA CU R PO S$ E$ CU R XPO S$ E$¥] *'-) MWW T YO Z C- R [W S$ NW Z XWW Z ^ PW T CU R XPO S$ XW b- C- R PO S$ NM Z C- R [W S$ PY Z E$¥]R P : E$0%& T$$ R NWW T_ TFL ` PW T_

Contextual Info: S c re w T y p e S e rie s 301 S e rie s Technical Data: Material: • HOUSING: NYLON UL 94 V-0. • Metal Housing: Brass Cu Zn Cu, Tin plated. • Wire guard: Stainless steel. • Screw: Steel galvanized and chrom atized. M2.6 Electrical: • Current rating: 10 Am ps/way max.

ECN30102

Contextual Info: Lead: Cu alloy + Pb-Free plating [Applied IC: ECN30102/30105/30107/30204/30207/30206/ 30611/30601/30603/30604/30671SP/SPV/SPR]

Contextual Info: Technical Data Effective January 2014 Industrial grade 15/10A Non-NEMA locking devices Project Name: Prepared By: Description Project Number: Date: Non-NEMA 15A, 125V/AC, 10A, 250V/AC, 3P-3W Catalog Number: Type: G CU CU G Receptacle Plug Non-NEMA 15A 125V; 10A 250V

amcom

Abstract: AM150MX-CB AM150MX-CU AMCOM Communications
Contextual Info: High Power GaAs Power FET The RF Power House AM150MX-CB DESCRIPTION AMCOM's AM150MX-CU is part of the CU Series of GaAs MESFETs. This FEATURES device has a total gate width of 15.0 mm. The AM150MX-CB is designed for • High Frequency Applications up to 6 GHz

Contextual Info: 1 oo I cu en cu oo + o o ir ; I CD LO cr^ S- 2 1 .2 + 0 .2 26 .5 ± 0.2 31± 0.3 457942 6 5 4 3 2 1 3020400007 3010400012 3021000027 3021000022 3020400006 3010200033 m ^ mM SR m ?l m íf # « X "ir. « % 1 1 3 1 1 1 I I H 62 PA H 62 H 62 65Mn ZZnAl4-l /v}