CTM 2S Search Results

OZ 9910

Abstract: OZ 9910 a AX9910 OZ 9910 g amperex 6252 21-GRID 2XL3 2S40 EEL 22d
Contextual Info: / 7 X *9 / I AMPEREX TUBE TYPE % 6252/AX-9910 GENERAL DESCRIPTION » T he 6 2 5 2 /A X - 9 9 I 0 i s a double tetrode intended for u s e a s a C l a s s C a m p lifie r at f r e q u e n c ie s up to 600 me. T o ta l anode d i s s i p a t i o n i s 20 w a tts, C C S. A llo w a b le

Contextual Info: KM416RD8AC D /KM418RD8AC(D) Preliminary Direct RDRAM 1 2 8 /1 4 4 M b it R D R A M 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAM™ Revision 1.0 July 1999 Rev. 1.0 Jul. 1999 Preliminary KM416RD8AC(D)/KM418RD8AC(D)_ Direct RDRAM™ Revision History

IN5248B

Abstract: G5LE-114P-PS toko rcl circuit inter CV 203 TK84819 Toko inductor RCL znr 14k ECK-D2H152KBE Beckman Industrial spw transformer 602
Contextual Info: rSTOKO TK84819 POWER FACTOR CONTROLLER PWM COMBO P^EUMOGMmf 0MF AT0©[N] FEATURES APPLICATIONS • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Reduced Overall Current Consumption Reduced Start-Up Current Slow Start Following Current Limit Shutdown

toshiba tlc 711

Abstract: RDRAM Clock T3D Toshiba
Contextual Info: TO SH IB A T E N T A T IV E TC59RM716 8 MB/RB T O S H IB A M O S D IG IT A L IN T E G R A T E D C IR C U IT SILIC O N M O N O L IT H IC Overview The Direct R a m b u s T M DRAM (Direct RDRAMTM) is a general-purpose high performance memory device suitable for use in a broad range of applications including computer memory, graphics, video

G5LE-114P-PS

Abstract: TOKO fi transformer Beckman Industrial 330
Contextual Info: I&TOKO TK84819 POWER FACTOR CONTROLLER PWM COMBO FEATURES APPLICATIONS • Reduced Overall Current Consumption ■ Switching Power Supplies with PFC ■ Reduced Start-Up Current ■ Computers ■ Slow Start Following Current Limit Shutdown ■ Work Stations

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT ¿¿PD488448, 488488 128/144 M-bit Direct Rambus DRAM Description The Direct Rambus DRAM Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including com puter memory, graphics, video, and any other application where

9T20T

Abstract: BA 59 04A FP TDA 5101 TC59 DL0054 4CZ2 it16t CA-23 1312080bz
Contextual Info: TOSHIBA TENTATIVE TC59RM718MB/RB/GB TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Overview The D irect R a m b u s T M DRAM D irect RDRAM ia a general-purpose high perform ance memory device suitable for use in a broad range of applications including com puter memory, graphics, video

Contextual Info: bq29440, bq2944L0 bq29449, bq2944L9 www.ti.com SLUSA15B – MARCH 2010 – REVISED JUNE 2010 Voltage Protection for 2-Series, 3-Series, or 4-Series Cell Li-Ion Batteries Second-Level Protection Check for Samples: bq29440, bq2944L0, bq29449, bq2944L9 FEATURES

IN5248B

Abstract: ECQV1H105JZ ecff1h ZNR 9k CNY17-2Z ECF-F1H104ZF5 ecqv1h224jz ECK-D2H TK84812 105W
Contextual Info: I&TOKO TK84819 POWER FACTOR CONTROLLER PWM COMBO FEATURES APPLICATIONS • Reduced Overall Current Consumption ■ Switching Power Supplies with PFC ■ Reduced Start-Up Current ■ Computers ■ Slow Start Following Current Limit Shutdown ■ W o rk s ta tio n s

drb PACKAGE texas

Abstract: SLUSA15C bq2944x BQ29440 IS3000
Contextual Info: bq29440, bq2944L0 bq29441, bq29442, bq29443, bq29449, bq2944L9 www.ti.com SLUSA15C – JUNE 2010 – REVISED NOVEMBER 2010 Voltage Protection for 2-Series, 3-Series, or 4-Series Cell Li-Ion Batteries Second-Level Protection Check for Samples: bq29440, bq2944L0, bq29441, bq29442, bq29443, bq29449, bq2944L9

Contextual Info: bq29440, bq2944L0 bq29441, bq29442, bq29443, bq29449, bq2944L9 www.ti.com SLUSA15C – JUNE 2010 – REVISED NOVEMBER 2010 Voltage Protection for 2-Series, 3-Series, or 4-Series Cell Li-Ion Batteries Second-Level Protection Check for Samples: bq29440, bq2944L0, bq29441, bq29442, bq29443, bq29449, bq2944L9

Contextual Info: bq29440, bq2944L0 bq29441, bq29442, bq29443, bq29449, bq2944L9 www.ti.com SLUSA15C – JUNE 2010 – REVISED NOVEMBER 2010 Voltage Protection for 2-Series, 3-Series, or 4-Series Cell Li-Ion Batteries Second-Level Protection Check for Samples: bq29440, bq2944L0, bq29441, bq29442, bq29443, bq29449, bq2944L9

N9301

Abstract: beckman sp 101 TK84
Contextual Info: r& TO K O TK84819 POWER FACTOR CONTROLLER PWM COMBO FEATURES APPLICATIONS • Reduced Overall Current Consumption ■ Switching Power Supplies with PFC ■ Reduced Start-Up Current ■ Computers ■ Slow Start Following Current Limit Shutdown ■ Workstations

bq2944x

Abstract: drb PACKAGE texas
Contextual Info: bq29440, bq2944L0 bq29441, bq29442, bq29443, bq29449, bq2944L9 www.ti.com SLUSA15C – JUNE 2010 – REVISED NOVEMBER 2010 Voltage Protection for 2-Series, 3-Series, or 4-Series Cell Li-Ion Batteries Second-Level Protection Check for Samples: bq29440, bq2944L0, bq29441, bq29442, bq29443, bq29449, bq2944L9

Contextual Info: bq29440, bq2944L0 bq29441, bq29442, bq29443, bq29449, bq2944L9 www.ti.com SLUSA15C – JUNE 2010 – REVISED NOVEMBER 2010 Voltage Protection for 2-Series, 3-Series, or 4-Series Cell Li-Ion Batteries Second-Level Protection Check for Samples: bq29440, bq2944L0, bq29441, bq29442, bq29443, bq29449, bq2944L9

Contextual Info: bq29440, bq2944L0 bq29441, bq29442, bq29443, bq29449, bq2944L9 www.ti.com SLUSA15C – JUNE 2010 – REVISED NOVEMBER 2010 Voltage Protection for 2-Series, 3-Series, or 4-Series Cell Li-Ion Batteries Second-Level Protection Check for Samples: bq29440, bq2944L0, bq29441, bq29442, bq29443, bq29449, bq2944L9

drb PACKAGE texas

Abstract: DRB ti
Contextual Info: bq29440, bq2944L0 bq29441, bq29442, bq29443, bq29449, bq2944L9 www.ti.com SLUSA15C – JUNE 2010 – REVISED NOVEMBER 2010 Voltage Protection for 2-Series, 3-Series, or 4-Series Cell Li-Ion Batteries Second-Level Protection Check for Samples: bq29440, bq2944L0, bq29441, bq29442, bq29443, bq29449, bq2944L9

j3y transistor

Abstract: marking R33 .j3y transistor transistor J3Y .j3y J3Y Transistor MARKING 2SC4176 HIGH SPEED SWITCHING NPN N/j3y transistor
Contextual Info: SILICON TRANSISTOR 2SC4176 HIGH SPEED SWITCHING NPN SILICON EPITAXIALTRANSISTOR FEATURE PACKAGE DIMENSIONS in millim eters 2.1 • High Speed: t on < 12 ns t off < 18 ns + 0.1 1 .25+0.1 ABSOLUTE M AXIM UM RATINGS M axim um Voltages and Current T a = 25 °C

Contextual Info: DATA SHEET NEC / SILICON TRANSISTOR _ / 2SB798 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S B798 is designed fo r audio frequency pow er a m p lifie r a pp lica tion, especially in H y b rid Integrated C ircuits. FEATURES PACKAGE DIMENSIONS

Contextual Info: Not Recommended for New Designs bq29440, bq2944L0 bq29441, bq29442, bq29443, bq29449, bq2944L9 www.ti.com SLUSA15C – JUNE 2010 – REVISED NOVEMBER 2010 Voltage Protection for 2-Series, 3-Series, or 4-Series Cell Li-Ion Batteries Second-Level Protection

Contextual Info: NEC NPN SILICON TRANSISTOR ELECTRON DEVICE 2SC1674 DESCR IPTIO N The 2SC1674 is designed fo r use in FM RF am p lifie r and PAC KAG E DIM EN SIO N S local oscillator o f FM tuner. FE A TU R E S in millimeters inches 5 2 MAX. (0204 MAX.) • High gain bandw idth p roduct ( f t = 6 0 0 MHz TYP.)

BQ29200DRBR

Abstract: BQ29209DRBR
Contextual Info: bq29200 bq29209 www.ti.com SLUSA52A – SEPTEMBER 2010 – REVISED NOVEMBER 2010 Voltage Protection with Automatic Cell Balance for 2-Series Cell Li-Ion Batteries Check for Samples: bq29200 , bq29209 FEATURES 1 • • • • • • 2-Series Cell Secondary Protection

BQ29200DRBR

Abstract: BQ29209DRBR
Contextual Info: bq29200 bq29209 www.ti.com SLUSA52A – SEPTEMBER 2010 – REVISED NOVEMBER 2010 Voltage Protection with Automatic Cell Balance for 2-Series Cell Li-Ion Batteries Check for Samples: bq29200 , bq29209 FEATURES 1 • • • • • • 2-Series Cell Secondary Protection

Ba 33 bco

Contextual Info: Direct RDRAM RAMBUS TM 32/36-M bit 256K x16/18x8d ADVANCE INFORMATION O verview The R am bus Direct RDRAM is a general p u rp o se high-perform ance m em ory device suitable for use in a broad range of applications including com puter mem ory, graphics, video, an d any other application