JCT612TC
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Jiangsu JieJie Microelectronics Co Ltd
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12 A SCR with 600 V repetitive peak off-state and reverse voltage, designed for medium power switching and phase control applications, featuring IGT ≤ 5 mA, TO-220C package, and junction temperature up to 125 ℃. |
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JCT612TA
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Jiangsu JieJie Microelectronics Co Ltd
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12 A SCR with 600 V repetitive peak off-state and reverse voltage, designed for medium power switching and phase control, featuring TO-220A insulated package and operating junction temperature up to 125℃. |
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JCT612K
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Jiangsu JieJie Microelectronics Co Ltd
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12 A SCR with 600 V repetitive peak off-state voltage, high dV/dt rate, and strong electromagnetic interference resistance, in a TO-252 RoHS-compliant package. |
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JCT612A
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Jiangsu JieJie Microelectronics Co Ltd
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12 A SCR with 600 V repetitive peak off-state and reverse voltage, 2500 VRMS rated insulation, TO-220A package, high dV/dt immunity, suitable for solid state relays, power chargers, and motor applications. |
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JCT612A-FO
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Jiangsu JieJie Microelectronics Co Ltd
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Silicon Controlled Rectifier (SCR) JCT612A-FO with 600V repetitive peak off-state voltage, 12A RMS on-state current, 3 to 6mA gate trigger current, TO-220A insulated package, 2500V RMS insulation voltage, and high dv/dt capability. |
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JCT612E
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Jiangsu JieJie Microelectronics Co Ltd
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JCT612E is a 12A SCR with 600V repetitive peak off-state and reverse voltage, TO-263 package, high dV/dt capability, and suitability for high-current surge applications. |
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JCT612F
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Jiangsu JieJie Microelectronics Co Ltd
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12 A SCR with 600 V repetitive peak off-state and reverse voltage, 2000 VRMS rated insulation, TO-220F package, high dV/dt capability, and 150 A/μs critical rate of rise of on-state current. |
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JCT612C
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Jiangsu JieJie Microelectronics Co Ltd
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12 A SCR with 600 V repetitive peak off-state and reverse voltage, high dV/dt immunity, TO-220C package, suitable for solid state relays, power chargers, and motor applications. |
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JCT612TF
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Jiangsu JieJie Microelectronics Co Ltd
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12 A SCR with 600 V repetitive peak off-state and reverse voltage, designed for medium power switching and phase control, featuring TO-220F insulated package and junction temperature up to 125℃. |
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JCT612H
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Jiangsu JieJie Microelectronics Co Ltd
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12 A SCR with 600 V repetitive peak off-state and reverse voltage, 15 mA gate trigger current, TO-251 package, suitable for high current shock loading applications. |
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JCT612TC
