JCT610H
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Jiangsu JieJie Microelectronics Co Ltd
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10 A SCR with 600 V repetitive peak off-state and reverse voltage, 6.5 A average on-state current, TO-251 package, high dV/dt capability, and RoHS compliance. |
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JCT610K
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Jiangsu JieJie Microelectronics Co Ltd
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10 A SCR with 600 V repetitive peak off-state and reverse voltage, high dV/dt rate, strong electromagnetic interference resistance, TO-252 package, suitable for solid state relay, power charger and T-tools applications. |
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JCT612TC
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Jiangsu JieJie Microelectronics Co Ltd
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12 A SCR with 600 V repetitive peak off-state and reverse voltage, designed for medium power switching and phase control applications, featuring IGT ≤ 5 mA, TO-220C package, and junction temperature up to 125 ℃. |
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JCT612TA
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Jiangsu JieJie Microelectronics Co Ltd
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12 A SCR with 600 V repetitive peak off-state and reverse voltage, designed for medium power switching and phase control, featuring TO-220A insulated package and operating junction temperature up to 125℃. |
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JCT616F
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Jiangsu JieJie Microelectronics Co Ltd
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JCT616F is a 600 V, 16 A RMS silicon controlled rectifier in a TO-220F insulated package, featuring high dV/dt immunity, 2000 V RMS insulation, and suitability for solid state relays, power chargers, and motor applications. |
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JCT616C
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Jiangsu JieJie Microelectronics Co Ltd
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JCT616C is a 600 V, 16 A SCR in TO-220C package with high dV/dt capability, 150 A surge current tolerance, and RoHS compliance, suitable for solid state relays, motor controls, and power chargers. |
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JCT610A
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Jiangsu JieJie Microelectronics Co Ltd
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10 A SCR with 600 V repetitive peak off-state and reverse voltage, 2500 VRMS rated insulation, TO-220A package, high dV/dt capability, and 110 A non-repetitive surge current for 10 ms. |
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JCT616E
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Jiangsu JieJie Microelectronics Co Ltd
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16A SCR with 600V repetitive peak off-state and reverse voltage, high dV/dt rate, strong electromagnetic interference resistance, suitable for solid state relay, power charger, and T-tools, in TO-263 package. |
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JCT612K
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Jiangsu JieJie Microelectronics Co Ltd
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12 A SCR with 600 V repetitive peak off-state voltage, high dV/dt rate, and strong electromagnetic interference resistance, in a TO-252 RoHS-compliant package. |
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JCT612F
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Jiangsu JieJie Microelectronics Co Ltd
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12 A SCR with 600 V repetitive peak off-state and reverse voltage, 2000 VRMS rated insulation, TO-220F package, high dV/dt capability, and 150 A/μs critical rate of rise of on-state current. |
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JCT612E
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Jiangsu JieJie Microelectronics Co Ltd
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JCT612E is a 12A SCR with 600V repetitive peak off-state and reverse voltage, TO-263 package, high dV/dt capability, and suitability for high-current surge applications. |
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JCT612A
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Jiangsu JieJie Microelectronics Co Ltd
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12 A SCR with 600 V repetitive peak off-state and reverse voltage, 2500 VRMS rated insulation, TO-220A package, high dV/dt immunity, suitable for solid state relays, power chargers, and motor applications. |
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JCT612A-FO
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Jiangsu JieJie Microelectronics Co Ltd
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Silicon Controlled Rectifier (SCR) JCT612A-FO with 600V repetitive peak off-state voltage, 12A RMS on-state current, 3 to 6mA gate trigger current, TO-220A insulated package, 2500V RMS insulation voltage, and high dv/dt capability. |
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JCT610F
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Jiangsu JieJie Microelectronics Co Ltd
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10 A SCR with 600 V repetitive peak off-state and reverse voltage, 2000 VRMS rated insulation, TO-220F package, high dV/dt capability, and 110 A non-repetitive surge current for 10 ms. |
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JCT616A-FO
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Jiangsu JieJie Microelectronics Co Ltd
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16A SCR with 600V repetitive peak off-state and reverse voltage, rated insulation voltage of 2500 V RMS, high dv/dt capability, TO-220A insulated package, suitable for solid state relays, power chargers, and motor applications. |
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JCT610C
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Jiangsu JieJie Microelectronics Co Ltd
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10 A SCR in TO-220C package with 600 V repetitive peak off-state and reverse voltage, designed for high dV/dt and surge current resistance, suitable for solid state relays, power chargers, and motor control applications. |
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JCT616H
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Jiangsu JieJie Microelectronics Co Ltd
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600V 16A SCR in TO-251 package with high dV/dt, 150 A/μs dI/dt, and 150A non-repetitive surge current capability, suitable for solid state relays, motor controls, and power tools. |
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JCT616K
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Jiangsu JieJie Microelectronics Co Ltd
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16 A SCR with 600 V repetitive peak off-state and reverse voltage, high dV/dt rate, TO-252 package, suitable for solid state relay, power charger and T-tools applications. |
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JCT612C
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Jiangsu JieJie Microelectronics Co Ltd
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12 A SCR with 600 V repetitive peak off-state and reverse voltage, high dV/dt immunity, TO-220C package, suitable for solid state relays, power chargers, and motor applications. |
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JCT612TF
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Jiangsu JieJie Microelectronics Co Ltd
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12 A SCR with 600 V repetitive peak off-state and reverse voltage, designed for medium power switching and phase control, featuring TO-220F insulated package and junction temperature up to 125℃. |
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JCT610H
