CT RAC 70 Search Results

7270m

Contextual Info: WHITE /MICROELECTRONICS W PD32M 72-XM DC 32Mx72 DRAM DIM M GENERAL DESCRIPTION FEATURES ^RAC cT" > o Perform ance range: ^RC ^PC W PD32M 72-60M DC 60ns 20ns 110ns 40ns W PD32M 72-70M DC 70ns 25ns 130ns 45ns The W P D32M 72-XM DC is an 32M x 72 bit Dynamic RAM high

ct rac 70

Abstract: preset Potentiometers carbon 2322 350 1S473 ecp10
Contextual Info: ECP10 2322 483 A _ 10mm ENCLOSED CARBON PRESET Q U IC K R E F E R E N C E D A TA Resistance range E3-series , linear law, log law on request 100 i i to 4,7 Maximum dissipation at 40 °C at 70 °C at 85 °C 0,1 W 0,05 W 0,025 W Temperature coefficient (range 1 k£2 to 2.2 MS2)

Contextual Info: 16 M EDO DRAM 2-Mword x 8-bit 2 k Refresh E0156H10 (Ver. 1.0) (Previous ADE-203-630D (Z) Jun. 27, 2001 LP EO Description HM5117805 Series The HM5117805 is a C MOS dynamic R AM orga nize d 2, 097,152-w ord × 8-bit. It employs the most adva nce d C MOS tec hnology for high per forma nce and low powe r. The HM5117805 off ers Extende d Da ta

ct rac 70

Contextual Info: 16 M EDO DRAM 2-Mword x 8-bit 2 k Refresh E0156H10 (Ver. 1.0) (Previous ADE-203-630D (Z) Jun. 27, 2001 LP EO Description HM5117805 Series The HM5117805 is a C MOS dynamic R AM orga nize d 2, 097,152-w ord × 8-bit. It employs the most adva nce d C MOS tec hnology for high per forma nce and low powe r. The HM5117805 off ers Extende d Da ta

ct rac 70

Abstract: HM5117805 HM5117805J-5 HM5117805J-6 HM5117805J-7 HM5117805LJ-5
Contextual Info: 16 M EDO DRAM 2-Mword x 8-bit 2 k Refresh E0156H10 (Ver. 1.0) (Previous ADE-203-630D (Z) Jun. 27, 2001 LP EO Description HM5117805 Series The HM5117805 is a C MOS dynamic R AM orga nize d 2, 097,152-w ord × 8-bit. It employs the most adva nce d C MOS tec hnology for high per forma nce and low powe r. The HM5117805 off ers Extende d Da ta

17805

Abstract: ct rac 70 HM51W17805 HM51W17805J-5 HM51W17805J-6 HM51W17805LS-6
Contextual Info: 16 M EDO DRAM 2-Mword x 8-bit 2 k Refresh E0155H10 (Ver. 1.0) (Previous ADE-203-631D (Z) Jun. 27, 2001 LP EO Description HM51W17805 Series The HM51W 17805 is a C MOS dynamic R AM orga nized 2, 097,152-w ord × 8-bit. It employs the most adva nce d C MOS tec hnology for high per forma nce and low powe r. The HM51W 17805 off ers Extende d Da ta

cm6800

Abstract: CM6500 CM6902 CM6501 CM6901 power supply cm6800 Champion CM6800 CM6900 CM6802 Champion CM6802
Contextual Info: PFC/PWM CONTROLLER DESIGN ALGORITHMS PFC-PWM CM6800/01/02/24 and CM6900/01/02 Design Algorithms Also, for Single PFC, CM6500 and CM6501, Please use the equations for CM6800/01/02 Prepared By: Jeffrey H. Hwang All the values should be typical values unless it was specified otherwise.

Contextual Info: IIP ^ Y ^ ^QT72 4 f l 0 0 2 ñ 2 cí i:í ñ 01 TC51V16400BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description TheTC51V16400BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. TheTC51 V16400BST uti­ lizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating mar­

ct rac 70

Abstract: HM5116405LS-5 HM5116405LS-6 HM5116405LS-7 HM5116405S-5 HM5116405S-6 HM5116405S-7 HM5117405s HM51W16405
Contextual Info: 16 M EDO DRAM 4-Mword x 4-bit 4 k Refresh/2 k Refresh LP EO Description HM5116405 Series HM5117405 Series E0151H10 (Ver. 1.0) (Previous ADE-203-633D (Z) Jul. 6, 2001 (K) The HM5116405 Series, HM5117405 Series are CMOS dynamic RAMs organized 4,194,304-word × 4-bit.

ct rac 70

Abstract: HM51W16405 HM51W16405LS-5 HM51W16405LS-6 HM51W16405LS-7 HM51W16405S-5 HM51W16405S-6 HM51W16405S-7 HM51W17405
Contextual Info: 16 M EDO DRAM 4-Mword x 4-bit 4 k Refresh/2 k Refresh LP EO Description HM51W16405 Series HM51W17405 Series E0152H10 (Ver. 1.0) (Previous ADE-203-647D (Z) Jul. 6, 2001 (K) The HM51W16405 Series, HM51W17405 Series are CMOS dynamic RAMs organized 4,194,304-word ×

HM5118165

Abstract: HM5118165J-5 HM5118165J-6 HM5118165J-7 HM5118165LJ-5 HM5118165LJ-6 ct rac 70
Contextual Info: 16 M EDO DRAM 1-Mword x 16-bit 1 k Refresh E0154H10 (Ver. 1.0) (Previous ADE-203-636D (Z) Jul. 6, 2001 (K) LP EO Description HM5118165 Series The HM5118165 is a CMOS dynamic RAM organized as 1,048,576-word × 16-bit. It employs the most advanced 0.5 µm CMOS technology for high performance and low power. The HM5118165 offers Extended

Contextual Info: HB56A472E Series 4,194,304-word x 72-bit High Density Dynamic RAM Module HITACHI Description The HB56A472E belongs to 8 Byte DIMM Dual In-line Memory Module family, and has been developed as an optimized main memory solution for 4- and 8-byte processor applications. The HB56A472E is a 4 M

Kamaya OHM RMC

Abstract: kamaya RMC RHC resistor RMC 210 10GH resistor rnc 55 150GA RHC16 150GQ FCR18
Contextual Info: HIGH OHM THICK FILM CHIP RESISTORS RHC16,20,32 K a m a y a ’s high ohm thick film chip resistors are available up to 150GQ. These resistors are primarily vised in current sensing applications such as pyroelectric sensors and compact measuring instruments.

Contextual Info: W9816G6JH 512K  2 BANKS  16 BITS SDRAM Table of Contents1. 2. 3. 4. 5. 6. 7. 8. 9. 10. GENERAL DESCRIPTION . 3 FEATURES . 3

tc5118165bj

Abstract: TC5118165B TC5118165 ct rac 70 TC5118165BFT
Contextual Info: TOSHIBA TC5118165BJ/BFT60/70 PRELIM INARY 1,048,576 W O RD X 16 BIT HYPER PAGE EDO DYNAMIC RAM Description The TC5118165BJ/BFT is the hyper page (EDO) dynamic RAM organized 1,048,576 words by 16 bits. The TC5118165BJ/ BFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operat­

HM538253BTT-7

Abstract: HM534253B DTH circuit diagram HM538253B HM538253BJ-10 HM538253BJ-7 HM538253BJ-8 HM538254B TMS34020 ct rac 70
Contextual Info: 2 M VRAM 256-kword x 8-bit Hyper Page Mode (HM538254B) LP EO Description HM538253B Series HM538254B Series E0163H10 (Ver. 1.0) (Previous ADE-203-264A/265 (Z) Jul. 6, 2001 (K) Features ro The HM538253B/HM538254B is a 2-Mbit multiport video RAM equipped with a 256-kword × 8-bit dynamic

jeida dram 88 pin

Abstract: STI321000C2
Contextual Info: STI321000C2-xxV,-xxSV 88-PIN CARDS 1M X 32 DRAM Card FEATURES • GENERAL DESCRIPTION Performance range: I ^RAC ^CAC *RC STI3210O0C2-60 60ns 15ns 120ns STI321000CZ-70 70ns 20ns 140ns STI3210OOC2-8O 80ns 20ns 160ns The Simple Technology STI321000C2 is a 1M bil x3 2 Dynamic

ML4800 - 24v

Abstract: ML4800 24v ml4800 FAN4800AS FAN480X FAN4800 AN-6078SC fan4800a cm6800 7485 ic comparator
Contextual Info: FAN4800AS / FAN4801S PFC/PWM Controller Combination Features Description ƒ Pin-to-Pin Compatible with ML4800 and FAN4800 and CM6800 and CM6800A ƒ PWM Configurable for Current Mode or Feedforward Voltage-Mode Operation ƒ Internally Synchronized Leading-Edge PFC and

ML4800 24v

Abstract: ML4800 - 24v AN-6078SC fairchild ML4800 power supply circuit FAN480X ML4800 battery charger FAN4800ASNY FAN4800 FAN4800AS ML4800
Contextual Info: FAN4800AS/CS/01S/2S PFC/PWM Controller Combination Features Description ƒ Pin-to-Pin Compatible with ML4800 and FAN4800 and CM6800 and CM6800A ƒ PWM Configurable for Current Mode or Feedforward Voltage-Mode Operation ƒ Internally Synchronized Leading-Edge PFC and

AN6078

Abstract: FAN4800 FAN4800C ML4800 FAN4802 FAN4800AS
Contextual Info: FAN4800AS/CS/01S/2S PFC/PWM Controller Combination Features Description ̇ Pin-to-Pin Compatible with ML4800 and FAN4800 and CM6800 and CM6800A ̇ PWM Configurable for Current Mode or Feedforward Voltage-Mode Operation ̇ Internally Synchronized Leading-Edge PFC and

Contextual Info: A tm ens TOSHIBA oosassR íe s c TC514265DJ/DFT-50/60/70 III < tQ PRELIMINARY oe o s QU<t 4 262,144 WORD X 16 BIT EDO HYPER PAGE DYNAMIC RAM Description TheTC514265DJ/DFT is an EDO (hyper page) dynamic RAM organized as 262,144 words by 16 bits. TheTC514265DJ/

TC51V4260

Contextual Info: TOSHIBA TC51V4260DFTS60/70 PRELIM IN ARY 262,144 WORD X 16 BIT DYNAMIC RAM Description TheTC51V4260DFTS is the new generation dynamic RAM organized 262,144 word by 16 bits. TheTC51V4260DFTS uti­ lizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

HFBR-1204

Abstract: HP transistor cross reference 820 nm laser diode M2.2 self tapping screws HFBR-2208 HFBR-4202 HP8501A self tapping screws metric HP8503A self tapping screws
Contextual Info: <vrK-% HEWLETT-PACKARD/ m CNPNTS HEW LETT PACKARD 34E D 44475Û4 ODGTbbT PIN PHOTODIODE FIBER OPTIC RECEIVER 1 B H P A HFBR-2208 T -* Features • GUARANTEED PERFORMANCE: 60 MHz Bandwidth at 5 V Reverse Bias Low Capacitance: Less than 1.6 pF 0.29 A/W Minim um Responsivity

Contextual Info: SIEM EN S 2M x 8-Bit Dynamic RAM 2k Refresh Hyper Page Mode-EDO HYB 5117805/BSJ-50/-60 HYB 3117805/BSJ-50/-60 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode-EDO-operation • Performance: