CS-7 B2 Search Results

hd614120

Abstract: iNEMO M1 HD614P180 hitachi pmos microcomputer hmcs404 HMCS400 HMCS412AC HMCS412C HMCS412CL R22-C
Contextual Info: H I T A C H I / tlCU/HPU IflE D • 4 4 T b 204 0 0 1 7 0 0 S 5 HM CS 412 C /H M C S 412 CL/ HM CS 412 AC H D 6 1 4 1 2 0 /H D 6 1 4 1 2 5 / H D 6 1 4 1 2 8 • Description The HMCS412C/CL/ AC are CMOS 4-bit singlechip microcomputers in the HMCS400 series.

ISO 14405

Abstract: VN118 PS219B2-AS
Contextual Info: PS219B2-S, PS219B2-AS, PS219B2-CS Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697-1800 724 925-7272 www.pwrx.com Intellimod Module Dual-In-Line Intelligent Power Module 5 Amperes/600 Volts PS219B2-S A D N O P 17 16 15 14 13 12 11 10 9 8 7 6

UT69151

Contextual Info: 9.0 SµMMIT RTE PIN IDENTIFICATION AND DESCRIPTION CHA A 15:0 CHA DA(15:0) PROCESSOR INTERFACE CHB ALE 1553 INTERFACE CHB RD R/WR or WR CS DS RDY EA(12:0) AUTOINITIALIZATION BUS UT69151 SµMMIT RTE JTAG (4:0) TERACT READY ED(7:0) BIST ECS EC(2:0) SSYSF JTAG

rta2

Abstract: UT69151
Contextual Info: 13.0 S MMIT XT PIN IDENTIFICATION AND DESCRIPTION CHA A 15:0 CHA DA(15:0) PROCESSOR INTERFACE CHB ALE CHB RD R/WR or WR CS DS RDY EA(12:0) AUTOINITIALIZATION BUS 1553 INTERFACE TRST TCK UT69151 S MMIT XT JTAGS(2:0) JTAGM(2:0) TERACT READY ED(7:0) BIST ECS

Contextual Info: THE INFORMATION CONTAINED HEREIN IS CONSIDERED "PROPRIETARY" TO B EL FOSE INC, AND SHALL NOT DE COPIED, REPRODOCED OR DISCLOSED WITHOUT THE V R IT T FN APPROVAL OF B EL FUSE INC, LED 1 P E L A R I T Y PIN 7 PIN 8 CELER + YELLEW - ELECTRICAL C H AR AC TE RI STI CS

Contextual Info: CYPRESS 4LE SEMICONDUCTOR T -4 6 -2 3 -T 4 H 5fl% b2 » 128IC x 32 Static RAM Module F e a tu re s F u n c tio n a l D e sc rip tio n • H igh-density 4-m egabit SRAM m odule T h e C Y M 1838 is a very high p erform ance 4-m egabi[ static R A M m odule organized

7eh0

Contextual Info: b2E D • b427525 GG3b04G 0b2 MNECE r NEC ELECTRONICS INC HPD17P103 4 - B IT S IN G L E - C H IP M IC R O C O N T R O L L E R The /¿PD17P103 is a t in y m icrocontro lle rs consisting o f a IK - b y te RO M , 16-w ord R A M , and 11 in p u t/o u tp u t ports,

MJ8-SL

Abstract: 1206 di pm7102 ON B34 PM710 data sheet 74ls373 sot23 a36 a26 sot23 AMP-MJ8 74ls373 datasheet
Contextual Info: P1 P2 P3V VDD VIO P3V VIO VIO VDD A1 1 1 B1 A2 2 2 B2 TCK A3 3 A4 4 1 A5 5 A6 6 INTA TDO 2 6 B6 0603 1812_MICDYN 7 B7 A8 8 X49 A9 9 2 C36 0.1 0.1 2 2 2 1812_MICDYN 10 B10 A11 11 11 B11 A12 12 12 B12 A13 13 13 B13 A14 14 C38 10 16V 8 B8 9 B9 X50 A10 10 1 1

b1a12

Abstract: K4S1G0632B PC133 SDRAM registered DIMM 512MB samsung M390S2950BTU-C7A M390S2953BT1-C7A M390S5658BT1-C7A M390S5658BTU-C7A M390S6553BT1-C7A M390S6553BTU-C7A K4S510832
Contextual Info: 512MB, 1GB, 2GB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module based on 512Mb B-die with 72-bit ECC Revision 1.0 January 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.0 January 2004

b1a12

Abstract: PC133 SDRAM registered DIMM 512MB samsung pc133 sdram 512mb ECC unbuffered K4S560832E M390S2858ET1-C7A M390S2858ETU-C7A M390S3253ET1-C7A M390S3253ETU-C7A M390S6450ET1-C7A M390S6450ETU-C7A
Contextual Info: 256MB, 512MB, 1GB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module based on 256Mb E-die with 72-bit ECC Revision 1.2 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 February 2004

25q64fvsig

Abstract: 25q64fv 25Q64FVAIG WINBOND 25Q64FVSIG 25q64 W25Q64FV 25q64f 25Q64FVFIG 25q64fva W25Q64FVSSIQ
Contextual Info: W25Q64FV 3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI -1- Publication Release Date: April 13, 2012 Revision D W25Q64FV Table of Contents 1. GENERAL DESCRIPTION . 5

Contextual Info: W25Q80BW 1.8V 8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI -1- Publication Release Date: July 30, 2013 Revision J W25Q80BW Table of Contents 1. GENERAL DESCRIPTIONS. 5

25Q80BVA

Abstract: 25q80bv 25q80 25Q80bvs 25q80bvaig 25q80bvsig land pattern for vsop 8 pins winbond* W25Q W25Q80b w25q80bv
Contextual Info: W25Q80BV 8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI -1- Publication Release Date: April 23, 2012 Revision F W25Q80BV Table of Contents 1. GENERAL DESCRIPTION . 5

Contextual Info: W25Q64FW 1.8V 64M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI Publication Release Date: November 11, 2013 Revision E W25Q64FW Table of Contents 1. GENERAL DESCRIPTIONS. 4

WINBOND 25Q64CVSIG

Contextual Info: W25Q64CV 3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI -1- Publication Release Date: May 07, 2012 Revision F W25Q64CV Table of Contents 1. GENERAL DESCRIPTION . 5

Winbond 25Q16dVSIG

Contextual Info: W25Q16DV 3V 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI -1- Publication Release Date: October 15,13 Revision F W25Q16DV Table of Contents 1. GENERAL DESCRIPTION . 5

Contextual Info: W25Q128BV 3V 128M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI -1- Publication Release Date: October 03, 2013 Revision H W25Q128BV Table of Contents 1. GENERAL DESCRIPTION . 5

100PF

Abstract: AM93LC56
Contextual Info: ATC AM93LC56 2048-bits Serial Electrically Erasable PROM Features General Description The AM93LC56 is the 2048-bit non-volatile serial EEPROM. It is manufactured by using ATC's advanced CMOS EEPROM technology. The AM93LC56 provides efficient non-volatile read/write

Contextual Info: TLV1543C, TLV1543I, TLV1543M 3.3-V 10-BIT ANALOG-TO-DIGITAL CONVERTERS WITH SERIAL CONTROL AND 11 ANALOG INPUTS SLAS072D – DECEMBER 1992 – REVISED JULY 2000 D D D D D D D D D D 3.3-V Supply Operation 10-Bit-Resolution A/D Converter 11 Analog Input Channels

Contextual Info: W25Q64FW 1.8V 64M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI Publication Release Date: June 17, 2013 Revision D1 W25Q64FW Table of Contents 1. GENERAL DESCRIPTIONS. 5

W25Q128FW

Contextual Info: W25Q128FW 1.8V 128M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI Publication Release Date: August 30, 2013 Revision D W25Q128FW Table of Contents 1. GENERAL DESCRIPTIONS. 5

Contextual Info: W25Q256FV 3V 256M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI Publication Release Date: October 16, 2013 Preliminary - Revision F W25Q256FV Table of Contents 1. GENERAL DESCRIPTIONS . 5

W25Q80BW

Abstract: 25q80 W25Q80BWSSIG W25Q80BWBYIG W25Q80BWSNIG W25Q80B
Contextual Info: W25Q80BW 1.8V 8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI -1- Publication Release Date: June 21, 2012 Preliminary - Revision F W25Q80BW Table of Contents 1. GENERAL DESCRIPTION . 5

Contextual Info: TLC1542ĆEP, TLC1543ĆEP 10ĆBIT ANALOGĆTOĆDIGITAL CONVERTERS WITH SERIAL CONTROL AND 11 ANALOG INPUTS SGLS152 − JANUARY 2004 D Controlled Baseline D D D D D D D D D D D D D DW PACKAGE TOP VIEW − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of