CS-550 IS Search Results

Contextual Info: 0.362-INCH SEVEN SEGMENT DISPLAYS OPTOELECTRONI CS RED FND350C FND357C FND358C HI-BRITE RED FND360C FND367C FND368C PACKAGE DIMENSIONS O R IE N T A T IO N M AR KS um I I .560 14.224 .550 (13.970) dpO .070 (2.73) .110 (2.794) I T X V D _! .030 (.762)— — 5192

AP03-049

Abstract: EML DRIVER E2550H57 E2550H58 E2550H59 E2580 IEC60825-1 10 gb laser diode
Contextual Info: Data Sheet October 2003 E2550 10 Gb/s EML Modules for up to 40 km Transmission Description 10 G b/ s Tr iQ ui E2 LEC nt OP TO E La 550 TRO NI se CS rM od ul e The E2550 EML, with integral driver IC, is designed for 10 Gb/s DWDM or TDM transmission applications. It

thermistor 054

Contextual Info: N EC b2E T> • ELECTRONI CS INC b42752S DQ3fiG5b EDM H N E C E DATA SHEET N EC LASER DIODE MODULE NDL5853P, NDL5853PA ELECTRON DEVICE 1 550 nm O PTICAL FIBER COMMUNICATIONS InGaAsP PH A SE-SH IFTED DFB-DC-PBH LA SER DIODE MODULE FOR 2 .5 Gb/s DESCRIPTIO N

SC1418

Abstract: SC1418* TRIAC sc151d triac 06040J7 SC151D 06010R5 3FT 85 Q2006
Contextual Info: TECCÔR ELECTRONICS INC S4E D flflTSfln 0GQ12ÌS 2 * T Z Ç - I S TECCOR II III ELECTRONICS, INC. 1801 HURD DRIVE IRVING, TEXAS 75038-4385 PHONE 214/580-1515 FAX 214/550-1309 MT2 o MT1 GATED TRIA CS 1-40 AMPS G e n e r a l especially for steady state power handling capability. The

laser diode chip

Abstract: nec 2222 NDL5850D DIODE CHIP
Contextual Info: N E C ELECTRONI CS I NC fc.EE D • b4 5 7 S2 S 0 0 3 0 0 4 3 b5b H N E C E DATA SHEET NEC LASER DIODE NDL5850D ELECTRON DEVICE 1 550 nm OPTICAL FIBER CO M M UNICATIONS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE FOR 2 .4 Gb/s DESCRIPTION NDL5850D is 1550 nm DFB Distributed Feed-back laser diode chip on carrier with ribbon lead. This device is designed

Contextual Info: -2.354 [59.79] MAX.- DATE REV 2/2/06 ECN A2 7457 JM 3 -2 1 -0 6 A3 7549 TRM 7—15—08 A4 8488 TRM APP’D. BY - .550 [13.97] — TYP. 25 ' TYP. GO ro 9 10 B B I -.060 [1.52] TYP. cs o T.280 [7.11] TYP. ^ i—i ro 1 1 i n + H f.3 ^ 4 - 7 2+4+6+S+ 2+4+6+B+

L7550

Abstract: DL7500 L5070 7550P
Contextual Info: N E C ELECTRONI CS I NC b2E D • bME7S2S 0 0 3 0 0 0 2 D33 « N E C E DATA SHEET NEC LASER DIODE MODULE N D L 755 0P ELECTRON DEVICE 1 550 nm In G a A sP M Q W -D C -P B H -P U L S E D L A S E R D IO D E 14 PIN D IP M O D U L E W IT H S IN G L E M O D E FIBER

Contextual Info: CYM1611 — ^ 16K x 16 Static RAM Module CYPRESS SEMICONDUCTOR Features Functional Description • High-density 256-kbit SRAM module T he CYM1611 is a very high performance 256-kbit static R A M module organized as 16K words by 16 bits. T he module is constructed from four 16K x 4 SRAMs in

Contextual Info: _ CYM1610 = =r SEMICONDUCTOR 16K x 16 Static RAM Module Features Functional Description • High-density 256K-bit SRAM module The CYM1610 is a high-performance 256-kbit static RAM module organized as 16K words by 16 bits. This module is

CYM1610

Abstract: LI330
Contextual Info: ss= , — ^ This is a partial data sheet. For complete data sheet, see Section 2, Static RAMs. _ CYM1610 SEMICONDUCTOR 16K x 16 Static RAM Module Features • High-denslty 256-kbit SRAM module • High-speed CMOS SRAMs — Access time of 12 ns

LIFO

Abstract: WD1510 WD1511 417-834 MI132 WD1510-00 WD1510-01 WD1510-02 cs-550 is
Contextual Info: LIFO/FIFO Buffer Register WD1510-00,-01,-02 OPERATION The WDlSlOcontains a 132 x 9 buffer which may be programmed for 128 x 9 operation. Setting the 128/132 pin to a Logic 0, enables the EMPTY and FULL lines to be activated when 128 bytes are read or written. When the 128/132 line is set to a Logic 1

Contextual Info: Product Specifications PART NO.: VL33B5663A-K9S/F8S/E7S REV: 1.0 General Information 2GB 256M x 72 DDR3 SDRAM ECC RDIMM 240-PIN Description The VL33B5663A is a 256M x 72 DDR3 SDRAM high density RDIMM. This memory module consists of eighteen CMOS 128M x 8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered buffer/PLL clock in BGA

DDR3 timing diagram

Abstract: 240-PIN DDR3-1066 DDR3-1333 PC3-10600 samsung DDR3 SDRAM 2GB
Contextual Info: Product Specifications PART NO.: VL33B5663A-K9S/F8S/E7S REV: 1.0 General Information 2GB 256M x 72 DDR3 SDRAM ECC RDIMM 240-PIN Description The VL33B5663A is a 256M x 72 DDR3 SDRAM high density RDIMM. This memory module consists of eighteen CMOS 128M x 8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered buffer/PLL clock in BGA

Contextual Info: This is a partial data sheet. F o r com plete data sheet, see Section 8, M odules. CYM1611 CYPRESS' SEMICONDUCTOR 16K x 16 Static RAM Module Features Functional Description • High-density 256-kbit SRAM module The CYM1611 is a very high performance 256-kbit static RAM module organized

Contextual Info: Product Specifications PART NO: REV: 1.0 VL53B5663A-K9S-F8S-E7S General Information 2GB 256MX72 DDR3 SDRAM ECC 244 PIN Mini-RDIMM Description: The VL53B5663A is a 256Mx72 DDR3 SDRAM high density Mini-RDIMM. This memory module consists of eighteen CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered

PC3-10600

Contextual Info: Product Specifications PART NO: REV: 1.0 VL43B5663A-K9S/F8S/E7S General Information 2GB 256MX72 DDR3 SDRAM ECC 204 PIN SO-RDIMM Description: The VL43B5663A is a 256Mx72 DDR3 SDRAM high density SO-RDIMM. This memory module consists of eighteen CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered

Contextual Info: Product Specifications PART NO: REV: 1.0 VL43B5663A-K9S/F8S/E7S General Information 2GB 256MX72 DDR3 SDRAM ECC 204 PIN SO-RDIMM Description: The VL43B5663A is a 256Mx72 DDR3 SDRAM high density SO-RDIMM. This memory module consists of eighteen CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered

240-PIN

Abstract: DDR3-1066 DDR3-1333 PC3-10600 VL33B5663F-K9
Contextual Info: Product Specifications PART NO.: VL33B5663F-K9S/F8S/E7S-H REV: 1.2 General Information 2GB 256Mx72 DDR3 SDRAM ULP ECC RDIMM 240-PIN WITH HEAT SPREADER Description The VL33B5663F is a 256Mx72 DDR3 SDRAM high density RDIMM. This memory module consists of eighteen CMOS

Contextual Info: Product Specifications PART NO.: VL33B5663F-K9S/F8S/E7S-H REV: 1.2 General Information 2GB 256Mx72 DDR3 SDRAM ULP ECC RDIMM 240-PIN WITH HEAT SPREADER Description The VL33B5663F is a 256Mx72 DDR3 SDRAM high density RDIMM. This memory module consists of eighteen CMOS

Contextual Info: FLS0116 MOSFET Integrated Smart LED Lamp Driver IC with PFC Function Features Description • •               The FLS0116 LED lamp driver is a simple IC with integrated MOSFET and PFC function. The special “adopted digital” technique automatically detects input

ST8008

Abstract: 112X64 CS 78 SEG79 U/25/20/TN26/15/850/SEG72
Contextual Info: ST ST8008 80 Output LCD Segment Driver IC PRELIMINARY Notice: Sitronix Technology Corp. reserves the right to change the contents in this document without prior notice. specification. Some parameters are subject to change. This is not a final DESCRIPTION The ST8008 is a 80-output segment driver IC suitable for driving small/medium scale dot matrix LCD panels, and is

Contextual Info: CYM1611 CYPRESS SEMICONDUCTOR 16K x 16 Static RAM Module Features Functional Description • High-density 256-kilobit SRAM module • High-speed — Access time of 12 ns The CYM1611 is a very high performance 256-kilobit static RAM module organized as 16K words by 16 bits. The module is con­

1618H

Contextual Info: _ CYM1610 SEMICONDUCTOR 16K x 16 Static RAM Module Features Functional Description • H igh-density 256-kbit SRAM module • H igh-speed CM OS SRAMs T h e CY M 1610 is a h igh-perform ance 256-kbit static R A M m odule organized

1611H

Abstract: 1611L
Contextual Info: CYM1611 r — c y p p fss y — SEMICONDUCTOR 16K x 16 Static RAM Module Features F unctional D escription • T h e CYM 1611 is a very high perform ance 256-kilobit static R A M m odule organized as 16K words by 16 bits. T h e module is con­ structed using four 16K x 4 static RAM s