CS 630 F Search Results

Contextual Info: PIXYS Phase Control Thyristor CS 630 ITRM Ss =1400A I' = 630 A VRRM = 1200-1600 V tavm Type 3 4 1200 1400 1600 1200 1400 1600 Symbol CS 630-12io1 CS 630-14io1 CS 630-16io1 Maximum Ratings Test Conditions 1400 630 A A 10 ms 50 Hz , sine 8.3 ms (60 Hz), sine

CR thyristor

Abstract: CS thyristor D-68623 thyristor cs 630
Contextual Info: Phase Control Thyristor CS 630 ITRMS = 1400 A ITAVM = 630 A VRRM = 1200 - 1600 V VRSM V RRM VDSM V DRM V V Type 1 2 3 2 4 3 4 1200 1400 1600 1200 1400 1600 CS 630-12io1 CS 630-14io1 CS 630-16io1 1 Symbol Test Conditions ITRMS ITAVM TC = 85°C; 180° sine I TSM

Contextual Info: CS-023E 3.2x2.5mm Crystal Resonator Features: Description: 2111 Comprehensive Drive Aurora, Illinois 60505 Phone: 630- 851- 4722 Fax: 630- 851- 5040 www.conwin.com US Headquarters: 630-851-4722 European Headquarters: +353-61-472221 Model: CS-023E • Frequency: 114.285 MHz

Contextual Info: Model CS-035 Low Profile TO-8 SC Cut Crystal Description: 2111 Comprehensive Drive 2111 Comprehensive Drive Aurora, Illinois 60505 Aurora, Illinois 60505 Phone: 630- 851- 4722 Phone: 630- 851- 4722 Fax: 630- 851- 5040 Fax: 630- 851- 5040 www.conwin.com www.conwin.com

1794A

Abstract: Belden 7855A
Contextual Info: REV. -16.00 [.630]- DATE NC ECR NO. 0 7 /0 2 /1 0 xxxxxx DESCRIPTION INITIAL RELEASE 7.70 [.303] I— 4.00 [.157]- m ÈkmÈm RECO M M ENDED CABLE STRIPPING DIM’S in 1 Î2 5 CS CM £ in ^ ro in o S I in ro tn IO r^ ro o m o in 00 05 S 2 E Œ - 22.00 [. 866 ]-

igct abb

Abstract: IGCT thyristor ABB gct thyristor IGCT thyristor HFBR-2528 IGCT thyristor current max IGCT
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 630 5 1.8 2 2800 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 08F4502 mΩ Ω V Doc. No. 5SYA1223-04 Jan. 02 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs

IGCT thyristor ABB

Abstract: IGCT abb
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 630 5 1.8 2 2800 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 08F4502 mΩ Ω V Doc. No. 5SYA1223-04 Jan. 02 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs

Contextual Info: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 630 5 1.80 2 2800 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 08F4502 mΩ Ω V Doc. No. 5SYA1223-04 Sep. 01 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs

R107

Abstract: R220
Contextual Info: Standard Products UTCAM-EngineTM Dynamically Configurable Content Addressable Memory Engine Advanced Datasheet April 1998 FEATURES External Memory q Drives up to 32 gigabytes of memory q Can drive either SRAM or SDRAM Host Interface q Configurable data bus

K4T1G044QQ

Abstract: M393T5660QZA K4T2G044QQ 63FBGA M393T5160QZA 256Mx4
Contextual Info: RDIMM DDR2 SDRAM DDR2 Registered SDRAM MODULE 240pin Registered Module based on 1Gb Q-die 72-bit ECC 60FBGA and 63FBGA with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE

IGCT thyristor ABB

Abstract: IGCT thyristor current max VT115 A115 B115 HFBR-1528 HFBR-2528 MTA-156 igct abb Pressure transmitter TBD
Contextual Info: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 4500 630 5x103 1.8 2 2800 V A A V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 08F4510 PRELIMINARY Doc. No. 5SYA1223-06 Aug 07 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and

IGCT thyristor ABB

Abstract: high power igct abb 5SHX 08F4502 abb cs 400
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 630 5 1.80 2 2800 V A kA V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 08F4502 Doc. No. 5SYA 1223-04 Aug. 2000 • Direct fiber optic control • Fast response ∆tdon < 3 µs, tdoff < 6 µs

K4T1G044QQ

Contextual Info: RDIMM DDR2 SDRAM DDR2 Registered SDRAM MODULE 240pin Registered Module based on 1Gb Q-die 72-bit ECC 60FBGA and 63DDP with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

DDR3 jedec 21-c

Abstract: MT41J256M4 micron quad die ddr3 MICRON ddr3
Contextual Info: 2GB, 4GB x72, ECC, SR 240-Pin DDR3 VLP RDIMM Features DDR3 SDRAM VLP RDIMM MT18JDF25672PZ – 2GB MT18JDF51272PZ – 4GB Features Figure 1: 240-Pin VLP RDIMM (R/C M) • DDR3 functionality and operations supported as defined in the component data sheet • 240-pin, very low-profile registered dual in-line

Contextual Info: 2GB, 4GB, 8GB x72, ECC, DR 240-Pin DDR3 UDIMM Features DDR3 SDRAM UDIMM MT18JSF25672AZ – 2GB MT18JSF51272AZ – 4GB MT18JSF1G72AZ – 8GB Features Figure 1: 240-Pin UDIMM (MO-269 R/C E) Module height: 30.0mm (1.181in) • DDR3 functionality and operations supported as

micron ddr3

Contextual Info: 2GB, 4GB x72, ECC, SR 240-Pin DDR3 VLP RDIMM Features DDR3 SDRAM VLP RDIMM MT18JDF25672PZ – 2GB MT18JDF51272PZ – 4GB Features Figure 1: 240-Pin VLP RDIMM (R/C M) • DDR3 functionality and operations supported as defined in the component data sheet • 240-pin, very low-profile registered dual in-line

MT41J256M8

Abstract: 2403 GB 123 DDR3 UDIMM SPD JEDEC MT41J512M8
Contextual Info: 2GB, 4GB, 8GB x72, ECC, DR 240-Pin DDR3 UDIMM Features DDR3 SDRAM UDIMM MT18JSF25672AZ – 2GB MT18JSF51272AZ – 4GB MT18JSF1G72AZ – 8GB Features Figure 1: 240-Pin UDIMM (MO-269 R/C E) Module height: 30.0mm (1.181 in.) • DDR3 functionality and operations supported as

MT18JSF25672PZ

Abstract: MT18JSF51272PZ-1G9
Contextual Info: 2GB, 4GB x72, ECC, SR 240-Pin DDR3 RDIMM Features DDR3 SDRAM RDIMM MT18JSF25672PZ – 2GB MT18JSF51272PZ – 4GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C C2) • DDR3 functionality and operations supported as defined in the component data sheet • 240-pin, registered dual in-line memory module

max 1782

Abstract: DDR3-1866 RDIMM SPD JEDEC MT18JSF25672PZ
Contextual Info: 2GB, 4GB x72, ECC, SR 240-Pin DDR3 RDIMM Features DDR3 SDRAM RDIMM MT18JSF25672PZ – 2GB MT18JSF51272PZ – 4GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C C2) • DDR3 functionality and operations supported as defined in the component data sheet • 240-pin, registered dual in-line memory module

MT18KSF1G72PZ-1G4

Abstract: MT18KSF1G72PZ-1G6 MT18KSF1G72 MT18KSF25672PZ MT41K1G4
Contextual Info: 2GB, 4GB, 8GB x72, ECC, SR 240-Pin 1.35V DDR3L RDIMM Features 1.35V DDR3L SDRAM RDIMM MT18KSF25672PZ – 2GB MT18KSF51272PZ – 4GB MT18KSF1G72PZ – 8GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C C and C2) • DDR3L functionality and operations supported as

M393T5663QZ3

Abstract: M393T5160QZA M393T5663QZA M393T5160QZA-CF7 M393T5660QZA
Contextual Info: RDIMM DDR2 SDRAM DDR2 Registered SDRAM MODULE 240pin Registered Module based on 1Gb Q-die 72-bit ECC 60FBGA and 63DDP with Pb-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

MT41J256M4

Abstract: MT18JSF25672PZ-1G4 MT18JSF25672PZ
Contextual Info: 2GB, 4GB x72, ECC, SR 240-Pin DDR3 RDIMM Features DDR3 SDRAM RDIMM MT18JSF25672PZ – 2GB MT18JSF51272PZ – 4GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C C) • DDR3 functionality and operations supported as per the component data sheet • 240-pin, registered dual in-line memory module

Contextual Info: Small, High Performance, Chassis Mount Transformers SINGLE FOR SIZES 3, 4, & 5 DUAL FOR SIZES 3, 4, & 5 CS/DCS Series The CS/DCS series of small power transformers is specifically designed for size and weight reduction. The result is a line where, for a given VA rating, size and weight are reduced approximately 50%.

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS THM 91002S/L-85, 10 , 12 description! The THM91002S/L is a 1,048,576 words by 9 bits dynamic RAM module which assembled 9 pcs of TC511002J on the printed circuit board. The THM91002S/L is optimized for application to the systems which are required