CS 630 F Search Results

MT41J256M4

Abstract: MT18JSF25672PZ-1G4 MT18JSF25672PZ
Contextual Info: 2GB, 4GB x72, ECC, SR 240-Pin DDR3 RDIMM Features DDR3 SDRAM RDIMM MT18JSF25672PZ – 2GB MT18JSF51272PZ – 4GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C C) • DDR3 functionality and operations supported as per the component data sheet • 240-pin, registered dual in-line memory module

Contextual Info: 2GB, 4GB x72, ECC, DR 240-Pin DDR3 VLP RDIMM Features DDR3 SDRAM VLP RDIMM MT18JDF25672PDZ – 2GB MT18JDF51272PDZ – 4GB Features Figure 1: 240-Pin VLP RDIMM (MO-269 R/C L) Module height: 18.75mm (0.738in) • DDR3 functionality and operations supported as defined in the component data sheet

64KA15

Contextual Info: 2GB, 4GB, 8GB x72, DR 240-Pin 1.35V DDR3L RDIMM Features 1.35V DDR3L SDRAM RDIMM MT18KSF25672PDZ – 2GB MT18KSF51272PDZ – 4GB MT18KSF1G72PDZ – 8GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C B, R/C B1) • DDR3L functionality and operations supported as

Contextual Info: Product Specifications PART NO.: VL41B5263A-K9S/F8S/E7S-S1 REV: 1.0 General Information 4GB 512MX72 DDR3 SDRAM ECC SO-UDIMM 204 PIN Description The VL41B5263A is a 512Mx72 DDR3 SDRAM high density SO-UDIMM. This memory module consists of eighteen CMOS 256M x 8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages and a 2K EEPROM in an 8-pin MLF

MT18JSF51272PDZ-1G

Abstract: MT18JSF25672PDZ MT18JSF25672PDZ-1G4 2403 GB 123 MT18JSF51272PDZ-1G6 MT18JSF51272PDZ
Contextual Info: 2GB, 4GB x72, ECC, DR 240-Pin DDR3 RDIMM Features DDR3 SDRAM RDIMM MT18JSF25672PDZ – 2GB MT18JSF51272PDZ – 4GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C B1) • DDR3 functionality and operations supported as defined in the component data sheet • 240-pin, registered dual in-line memory module

RCAS 4150

Abstract: M393T5750EZA M393T6553EZ3
Contextual Info: DDR2 SDRAM RDIMM DDR2 Registered SDRAM MODULE 240pin Registered Module based on 512Mb E-die 72-bit ECC 60FBGA with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

MT18KSF51272HZ-1G6

Abstract: MT18KSF1G72HZ-1G6 MT18KSF51272HZ-1G4 MT18KSF1G72HZ MT18KSF1G72 DDR3 ECC SODIMM Fly-By Topology SO-DIMM DDR3 ECC MT18KSF1G72HZ-1G4
Contextual Info: 2GB, 4GB, 8GB x72, ECC, DR 204-Pin 1.35V DDR3L SODIMM Features 1.35V DDR3L SDRAM SODIMM MT18KSF25672HZ – 2GB MT18KSF51272HZ – 4GB MT18KSF1G72HZ – 8GB Features Figure 1: 204-Pin SODIMM (MO-268 R/C D) • DDR3L functionality and operations supported as

Contextual Info: 4GB x72, ECC, DR 244-Pin DDR3 Mini-UDIMM Features DDR3 SDRAM Mini-UDIMM MT18JSF51272AKZ – 4GB Features Figure 1: 244-Pin Mini-UDIMM (MO-244 R/C B) • DDR3 functionality and operations supported as defined in the component data sheet • 244-pin, 82mm, unbuffered dual in-line memory

2SK1823-01

Abstract: DDQ3114 2sk mosfet
Contextual Info: 2SK1823-01 S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET _ . _ - _ _ _ _ _ _ FAP-IIIA SERIES • Features Outline Drawings • High cu rren t • L ow o n-resistance • N o secondary b reakd ow n

a2305

Abstract: A2307 2sk1969 N CH MOSFET
Contextual Info: 2SK1969-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET _ -FAP-IIIA SERIES • Features IOutline Drawings • Hig i current • Low on-resistance • No secondary breakdown • L o v driving power • H ig i forward Transconductance

Contextual Info: KMM374S823CTS PC100 Unbuffered DIMM Revision History Revision 0.1 Mar. 24, 1999 - Changed "Detail C" in PCB Dimension. - Changed decoupling capacitance from two 0.1uF to one 0.1uF and one 0.33 uF. Rev.0.1 Mar 1999 KMM374S823CTS PC100 Unbuffered DIMM KMM374S823CTS SDRAM DIMM

DDR200

Abstract: DDR266 DDR333 DDR400 W3EG72128S-D3
Contextual Info: W3EG72128S-D3 -JD3 White Electronic Designs ADVANCED* 1GB – 2x64Mx72 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION Double-data rate architecture the W3EG72128S is a 2x64Mx72 Double data Rate SDRAM memory module based on 512Mb DDR SDRAM components. The module consists of eighteen 64Mx8

Contextual Info: LED Display L E D K ’y h " 7 b V K7 * Dot ConfigulMcin m dot Com.-Anode y f Z m L E D £ TuDA No Com.-Cathode 8x8 1 6 x 16 M a t r i x D i s p l a y s Ip /d o t iFP/dO t VR/dot Pd Topr nm Color mA mA V W ”C mA Absolute Maximum Ratings Electro-Optical Characteristics

Contextual Info: 8GB x72, ECC, SR 240-Pin DDR3 RDIMM Features DDR3 SDRAM RDIMM MT18JSF1G72PZ – 8GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C C2) • DDR3 functionality and operations supported as per the component data sheet • 240-pin, registered dual in-line memory module

TR zo 103 ma

Abstract: CA3420 CA3420A ZO 103 NA
Contextual Info: - 100 - CA3420 M ÌE HARRIS BiMOS • * •«ZgitE*gffl:2~20V •À*1«Sft:lpA 0 u - j u • h , . w-^ottì^/SEìgffl % " X l '— ss. w ft t t • * 22 V A ~h * S EE - V s - 0 . 5— +V s+ 8 - V s - 0 . 5— +V s+ 8 V U S U A R IE ±1 5 ±15 V S8 -55-+125

Contextual Info: Product Specifications PART NO: REV: 1.1 VL41B5663A-K9S-F8S-E7S General Information 2GB 256MX72 DDR3 SDRAM ECC UNBUFFERED SO-UDIMM 204-PIN Description: The VL41B5663A is a 256Mx72 DDR3 SDRAM high density SO-UDIMM. This memory module consists of eighteen CMOS 128Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, and a 2K EEPROM

DDR3 rDIMM

Contextual Info: 4GB x72, ECC, DR 244-Pin DDR3 SDRAM Mini-RDIMM Features DDR3 SDRAM Mini-RDIMM MT18JSF51272PKZ – 4GB Features Figure 1: 244-Pin Mini-RDIMM (MO-244 R/C C) • DDR3 functionality and operations supported as defined in the component data sheet • 244-pin, registered dual in-line, 82mm, memory

101490

Contextual Info: HM101490 Series 65536-Words x 1-Bit Fully Decoded Random Access Memory • DESCRIPTION The HM101490 is ECL 100K compatible, 65536-words by 1-bit read/write random access memory developed for high speed sys­ tems such as scratch pads and control/buffer storage.

REF022

Contextual Info: +5V Precision Voltage Reference/Temperature Transducer REF-02 ANALOG DEVICES FEATURES G E N E R A L D E S C R IP T IO N • 5 Volt Output . ±0.3% Max • Temperature Voltage O u tp u t.2.1mV/°C

Contextual Info: M A C RO NIX 34E IN C M X 2 3 1 0 2 4 S b a ô fiô a » Q O O G lb ? 3 EVIA PRELIM INARY 1 3 1 . 0 7 0 X 8 S T A T I C M E A D O N L Y MLI 1ÜIIY T 4 t-t3-1$ FEATURES D E S C R IP T IO N . 131,07 0 X 8 -b it organization . Access lime - ISO ns max , Current-Operating: 100 mA max

Contextual Info: HB56C19A/AT/B-8A/10A/12A 1,048,576-Word x 9-Bit High Density Dynamic RAM Module Pin No. • DESCRIPTION Pin Name Pin No. Pin Name 1 Vcc 16 dq4 2 CS 17 3 DQo 18 A8 a9 4 Ao 19 NC 5 A, 20 dq5 6 DQ, 21 WE 7 A2 22 Vss ■ FEATURES 8 A3 23 dq6 • 30-Pin Single In-Line Package

Contextual Info: CLD-CT1135.001 PRODUCT FAMILY DATA SHEET Cree P4 LED CP43B-RGS CP43B-AGS PRODUCT DESCRIPTION FEATURES APPLICATIONS This revolutionary package design • Size mm : 7.6 x 7.6 • Channel Letter • Color and Typical Dominant Wavelength: Red (624nm) Amber(591nm)

Contextual Info: f i - û IL-FPR SERIES CONNECTORS 0.5mm (.020" Pitch; ZIF Type Connectors for FPC/FFC IL-FPR Series SM T connectors meet today's requirements for smaller size and lighter weight. These connectors have ex­ tremely high contact density and low profiles. The connectors have 0.5mm (.020") centers and a 2.0mm (.079")

Contextual Info: bJE 1 • MMRbSDB QDS3b74 5 m HB56A169 Series ■HITS HI TA C H I / L O G I C / A R R A Y S / M E M — 1 6 ,7 7 7 ,2 1 6 -W o rd x 9 -B it H igh D e n s ity D y n a m ic R A M M o d u le T he H B 56A 169 is a 16 M x 9 dyn am ic RA M m o d u le , m o u n te d 9 p iec es o f 16-M bit D R A M