CS 46 204 Search Results

adc 515

Abstract: MAX19710EVKIT AD10 MAX1910 MAX19710ETN 184212-1
Contextual Info: 19-0526; Rev 0; 5/06 KIT ATION EVALU E L B AVAILA 10-Bit, 7.5Msps, Full-Duplex Analog Front-End Applications Portable Communication Equipment MAX19710ETN+ DA4 DA5 DA6 DA7 DA8 DA9 DOUT DIN SCLK VDD CS/WAKE GND VDD 28 DA3 DAC3 44 27 DA2 DAC2 45 26 DA1 DAC1 46

Contextual Info: a t i o n a l Semiconductor NM93C06LZ/C46LZ/C56LZ/C66LZ 256-/1024-/2048-/4096-Bit Serial EEPROM with Zero Power and Extended Voltage 2.7V to 5.5V (MICROWIRE Bus Interface) General Description Features The NM93C06LZ/C46LZ/C56LZ/C66LZ devices are 256/ 1024/2048/4096 bits respectively, of CMOS non-volatile

Contextual Info: September 1996 Semiconductor NM93C06LZ/C46LZ/C56LZ/C66LZ 256-/1024-/2048-/4096-Bit Serial EEPROM with Zero Power and Extended Voltage 2.7V to 5.5V (MICROWIRE Bus Interface) General Description Features The NM93C06LZ/C46LZ/C56LZ/C66LZ devices are 256/

11778

Abstract: 66LZ diode Lz 66 C1996 M08A NM93C06LZ NM93C06LZN NM93C56LZN
Contextual Info: NM93C06LZ C46LZ C56LZ C66LZ 256- 1024- 2048- 4096-Bit Serial EEPROM with Zero Power and Extended Voltage 2 7V to 5 5V (MICROWIRE TM Bus Interface) General Description Features The NM93C06LZ C46LZ C56LZ C66LZ devices are 256 1024 2048 4096 bits respectively of CMOS non-volatile

diode Lz 66

Abstract: M08A NM93C06
Contextual Info: General Description Features The NM93C06LZ/C46LZ/C56LZ/C66LZ devices are 256/ 1024/2048/4096 bits respectively, of CMOS non-volatile electrically erasable memory divided into 16/64/128/256 16-bit registers. They are fabricated using Fairchild Semiconductor’s floating-gate CMOS process for high reliability

M08A

Abstract: KJe rn
Contextual Info: N a t i o n a l S e m i c o n d u c t o r NM93C06LZ/C46LZ/C56LZ/C66LZ 2 56-/1024-/2048-/4096-Bit Serial EEPROM with Zero Power and Extended Voltage 2.7V to 5.5V (MICROWIRE Bus Interface) General Description Features The NM93C06LZ/C46LZ/C56LZ/C66LZ devices are 256/

HMT125S6TFR8C

Abstract: HMT112S6TFR8C
Contextual Info: APCPCWM_4828539:WP_0000005WP_000000 APCPCWM_4828539:WP_0000005WP_0000005 204pin DDR3 SDRAM SODIMM DDR3 SDRAM Unbuffered SODIMMs Based on 1Gb T-die HMT112S6TFR8C HMT125S6TFR8C *Hynix Semiconductor reserves the right to change products or specifications without notice.

Contextual Info: GMM27333233ANTG LG S em icon C o .,L td. 33,554,432 WORDS x72BIT SYNCHRONOUS DYNAMIC RAM M ODULE Description The GMM27333233ANTG is a 32M x 72bits Synchronous Dynamic RAM MODULE which is assembled 18 pieces of 16M x 8bits Synchronous DRAMs in 54 pin TSOP II package and one 2048 bit EEPROM

Contextual Info: GMM26433233ANTG LG S em icon C o .,L td. 33,554,432 WORDS x64bit SYNCHRONOUS DYNAMIC RAM M ODULE Description The GMM26433233ANTG is a 32M x 64bits Synchronous Dynamic RAM MODULE which is assembled 16 pieces of 16M x 8bits Synchronous DRAMs in 54 pin TSOP II package and one 2048 bit EEPROM

Contextual Info: GMM27333233ANTG LG Semicon Co.,Ltd. 33,554,432 WORDS x72BIT SYNCHRONOUS DYNAMIC RAM MODULE Description The GMM27333233ANTG is a 32M x 72bits Synchronous Dynamic RAM MODULE which is assembled 18 pieces of 16M x 8bits Synchronous DRAMs in 54 pin TSOP II package and one 2048 bit EEPROM

Contextual Info: GMM27316233ENTG LG S em icon C o .,L td. 16,777,216 WORDS x72BIT SYNCHRONOUS DYNAMIC RAM M ODULE Description The GMM27316233ENTG is a 16M x 72bits Synchronous Dynamic RAM MODULE which is assembled 18 pieces of 8M x 8bits Synchronous DRAMs in 54 pin TSOP II package and one 2048 bit EEPROM

Contextual Info: GMM26416233ENTG LG S em icon C o .,L td. 16,777,216 WORDS x64bit SYNCHRONOUS DYNAMIC RAM M ODULE Description The GMM26416233ENTG is a 16M x 64bits Synchronous Dynamic RAM MODULE which is assembled 16 pieces of 8M x 8bits Synchronous DRAMs in 54 pin TSOP II package and one 2048 bit EEPROM

Contextual Info: GMM27316233ENTG 16,777,216 WORDS x72BIT LG Semicon Co.,Ltd. Description The GMM27316233ENTG is a 16M x 72bits Synchronous Dynamic RAM MODULE which is assembled 18 pieces of 8M x 8bits Synchronous DRAMs in 54 pin TSOP II package and one 2048 bit EEPROM in 8pin TSSOP package mounted on a 168

Contextual Info: GMM26433233ANTG 33,554,432 WORDS x64bit SYNCHRONOUS DYNAMIC RAM MODULE LG Sem icon Co.,Ltd. Description The GMM26433233ANTG is a 32M x 64bits Synchronous Dynamic RAM MODULE which is assembled 16 pieces of 16M x 8bits Synchronous DRAMs in 54 pin TSOP II package and one 2048 bit EEPROM

GMM26416233

Contextual Info: GMM26416233ENTG 16Mx64, 8Mx8 based, PC100/PC133 Description The GM M 26416233ENTG is a 16M x 64bits S y n c h r o n o u s D y n a m ic R A M M O D U L E which is assem bled 16 pieces o f 8M x Sbits S y n c h ro n o u s D R A M s in 54 p in T S O P II package and one 2048 bit EEPROM in 8pin

MA6116

Abstract: MA6116 f6 MA6116 f5 MA6216
Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS MA6116 & MA6216 MARCH 1995 DS3582-3.1 MA6116 & MA6216 RADIATION HARD 2048 x 8 BIT STATIC RAM The MA6116 16k Static RAM is configured as 2048 x 8 bits and manufactured using CMOS-SOS high performance, radiation hard,

Contextual Info: GMM27316233ENTG 16Mx72, 8Mx8 based, PC100/PC133 Description The GM M 27316233ENTG is a 16M x 72bits S y n c h r o n o u s D y n a m ic R A M M O D U L E w hich is assem bled 18 pieces o f 8M x 8bits S y n c h ro n o u s D R A M s in 54 p in T S O P II package and one 2048 bit EEPROM in 8pin

93C66LZ

Contextual Info: NM93C06LZ/C46LZ/C56LZ/C66LZ 256-/1024-/2048-/4096-Bit Serial EEPROM with Zero Power and Extended Voltage 2V to 6V (MICROWIRE Bus Interface) G eneral Description Features The NM 93C06LZ/C46LZ/C56LZ/C66LZ devices are 256/ 1024/2048/4096 bits respectively, of CMOS non-volatile

MA6116

Abstract: MA6116 f6 ma6216 MA6116 f5 DIAGRAM MA6116 F6 Part-4 DS3582-3 5501 560 3400 data sheet GEC Plessey Semiconductors XG403
Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS MA6116 & MA6216 MARCH 1995 DS3582-3.1 MA6116 & MA6216 RADIATION HARD 2048 x 8 BIT STATIC RAM The MA6116 16k Static RAM is configured as 2048 x 8 bits and manufactured using CMOS-SOS high performance, radiation hard,

MA6116

Abstract: MA6116 f6 MA6216 DIAGRAM MA6116 F6 MAX6116 DIAGRAM MA6116 F5 MA621 MA61 MAX6216 MA6116 f5
Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS MA6116 & MA6216 MARCH 1995 DS3582-3.1 MA6116 & MA6216 RADIATION HARD 2048 x 8 BIT STATIC RAM The MA6116 16k Static RAM is configured as 2048 x 8 bits and manufactured using CMOS-SOS high performance, radiation hard,

Contextual Info: Tem ic M 67132/M 67142 MATRA MHS 2 K x 8 CMOS Dual Port RAM Description The M 67132/67142 are very low power CMOS dual port static RAMs organized as 2048 x 8. They are designed to be used as a stand-alone 8 bit dual port RAM or as a combination MASTER/SLAVE dual

Contextual Info: 240PIN DDR2 800 Unbuffered DIMM 512MB With 32Mx8 CL5 TS64MLQ64V8F Description Placement The TS64MLQ64V8F is a 32M x 64bits DDR2-800 Unbuffered DIMM. The TS64MLQ64V8F consists of 16 pcs 32Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin

Contextual Info: 240PIN DDR2 800 Unbuffered DIMM 512MB With 32Mx8 CL4 TS64MLQ64V8F Description Placement The TS64MLQ64V8F is a 32M x 64bits DDR2-800 Unbuffered DIMM. The TS64MLQ64V8F consists of 16 pcs 32Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin

Contextual Info: 240PIN DDR2 800 Unbuffered DIMM 512MB With 32Mx8 CL4 TS64MLQ64V8F Description Placement The TS64MLQ64V8F is a 32M x 64bits DDR2-800 Unbuffered DIMM. The TS64MLQ64V8F consists of 16 pcs 32Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin