CREE SIC Search Results
CREE SIC Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| MG800FXF1ZMS3 | Toshiba Electronic Devices & Storage Corporation | N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD | Datasheet | ||
| MG800FXF1JMS3 | Toshiba Electronic Devices & Storage Corporation | N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET | Datasheet | ||
| TRS2E65H | Toshiba Electronic Devices & Storage Corporation | SiC Schottky Barrier Diode (SBD), 650 V, 2 A, TO-220-2L | Datasheet | ||
| TRS10V65H | Toshiba Electronic Devices & Storage Corporation | SiC Schottky Barrier Diode (SBD), 650 V,104 A, DFN8×8 | Datasheet | ||
| TRS8V65H | Toshiba Electronic Devices & Storage Corporation | SiC Schottky Barrier Diode (SBD), 650 V, 8 A, DFN8×8 | Datasheet |
CREE SIC Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
TR2227TM
Abstract: TR2227 cree rf OS4000 TR-21
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tr2227tmcxxxtr2227-sxx00tr2227cree rf+2 | |
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Contextual Info: Cree TR2432 LEDs Data Sheet CxxxTR2432-Sxx00 Cree’s TR™ LEDs are the newest generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary device technology and silicon carbide substrates to deliver superior value for the LCD sideview |
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tr2432tmcxxxtr2432-sxx00tr2432460tr238 | |
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Contextual Info: Cree UltraThinII LED Data Sheet CxxxUT2200-Sxxxxx Cree’s UltraThin LEDs combine highly eficient InGaN materials with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for blue LEDs. These vertically structured LED chips are small in size and require a low |
Original |
cxxxut2200-sxxxxx | |
OS4000
Abstract: TR-24 TR-27 TR2436TM TR-27TM
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tr2436tmcxxxtr2436-sxx00tr2436460tr239+4 | |
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Contextual Info: Cree UltraThin LED Data Sheet CxxxUT200-Sxxxx Cree’s UltraThin LEDs combine highly eficient InGaN materials with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for blue LEDs. These vertically structured LED chips are small in size and require a low |
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cxxxut200-sxxxx | |
0/UT-0206-P05
Abstract: C460UT200-Sxxxx Cree SiC diode die OS4000 cree chip UT200
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cxxxut200-sxxxx0/ut-0206-p05c460ut200-sxxxxcree sic diode die+3 | |
C527T
Abstract: OS4000
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tr2436tmcxxxtr2436-sxx00tr2436460tr239+2 | |
TR2227TM
Abstract: cree TR06-T
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tr2227tmcxxxtr2227-sxx00tr2227cree+1 | |
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Contextual Info: Cree UltraThin Gen III LEDs Data Sheet CxxxUT190-Sxxxx-30 Cree’s UltraThin LEDs combine highly eficient InGaN materials with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for blue LEDs. These vertically structured LED chips are small in size and require a low |
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cxxxut190-sxxxx-30 | |
C460UT190-0313-30
Abstract: OS400
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cxxxut190-sxxxx-30c460ut190-0313-30os400 | |
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Contextual Info: Cree UltraThin Gen III LEDs Data Sheet CxxxUT190-Sxxxx-31 Cree’s UltraThin LEDs combine highly efficient InGaN materials with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for blue LEDs. These vertically structured LED chips are small in size and require a low |
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cxxxut190-sxxxx-31 | |
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Contextual Info: Cree TR2227 LEDs Data Sheet CxxxTR2227-Sxx00 Cree’s TR™ LEDs are the newest generation of solid-state LED emitters that combine highly eficient InGaN materials with Cree’s proprietary device technology and silicon carbide substrates to deliver superior value for the LCD sideview |
Original |
tr2227cxxxtr2227-sxx00 | |
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Contextual Info: Cree TR2432 LEDs Data Sheet CxxxTR2432-Sxx00 Cree’s TR™ LEDs are the newest generation of solid-state LED emitters that combine highly eficient InGaN materials with Cree’s proprietary device technology and silicon carbide substrates to deliver superior value for the LCD sideview |
Original |
tr2432cxxxtr2432-sxx00 | |
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Contextual Info: Cree TR2436 LEDs Data Sheet CxxxTR2436-Sxx00 Cree’s TR™ LEDs are the newest generation of solid-state LED emitters that combine highly eficient InGaN materials with Cree’s proprietary device technology and silicon carbide substrates to deliver superior value for the LCD sideview |
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tr2436cxxxtr2436-sxx00 | |
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cree package structure
Abstract: 0205 LIGHT BLUE OS4000 CxxxUT2200-Sxxxxx Cree SiC BLue cree sic led UT225 M150X
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cxxxut2200-sxxxxxcree package structure0205 light blueos4000+4 | |
TR2432
Abstract: 450 nm OS4000 TR-21 TR-24 C460TR2432-0211
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tr2432tmcxxxtr2432-sxx00tr2432460tr238+5 | |
OS4000Contextual Info: Cree UltraThin Gen III LEDs Data Sheet CxxxUT190-Sxxxx-30 Cree’s UltraThin LEDs combine highly efficient InGaN materials with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for blue LEDs. These vertically structured LED chips are small in size and require a low |
Original |
cxxxut190-sxxxx-30os4000 | |
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Contextual Info: Cree UltraThin Gen III LEDs Data Sheet CxxxUT190-Sxxxx-31 Cree’s UltraThin LEDs combine highly efficient InGaN materials with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for blue LEDs. These vertically structured LED chips are small in size and require a low |
Original |
cxxxut190-sxxxx-31 | |
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Contextual Info: Cree UltraThin Gen III LEDs Data Sheet CxxxUT190-Sxxxx-31 Cree’s UltraThin LEDs combine highly eficient InGaN materials with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for blue LEDs. These vertically structured LED chips are small in size and require a low |
Original |
cxxxut190-sxxxx-31 | |
Solar InvertersContextual Info: 10-PZ12B2A040ME01-M330L63Y flow SOL0-SiC 1200 V / 40 mΩ Features TM ● Cree flow 0 12mm housing Silicon Carbide Power MOSFET TM ● Cree Silicon Carbide Power Schottky Diode ● Dual Boost Topology ● Ultra Low Inductance with Integrated DC-capacitors |
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10-pz12b2a040me01-m330l63ysolar inverters | |
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Contextual Info: 10-PZ12NMA027ME-M340F63Y flow MNPC 0-SIC 1200V/ 80mΩ Features flow 0 12mm housing ● Cree Silicon Carbide Power MOSFET ● Cree™ Silicon Carbide Power Schottky Diode ● MNPC Topology with Splitted Output ● Ultra Low Inductance with Integrated DC-capacitors |
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10-pz12nma027me-m340f63y | |
JEDEC J-STD-020d.1
Abstract: sac305 SAC305 reflow profile SAC305 solder paste sac305 kester SAC305 reflow Kester sn-pb-ag solder preform J-STD-020D SAC-305
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j-std-020dappnote-007jedec j-std-020d.1sac305+7 | |
hysol OS4000 epoxy
Abstract: Gan on silicon substrate C430CB230-S0100 OS4000
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c430cb230-s0100os4000hysol os4000 epoxygan on silicon substrate | |
C430CB290-S0100
Abstract: OS4000
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c430cb290-s0100os4000 | |