CR DIODE TRANSIENT Search Results

semikron skkt 90

Abstract: semikron SKK
Contextual Info: VRSM VRRM dv/ VDRM dt cr SEMIPACK 3 Thyristor / Diode Modules ITRMS (maximum values for continuous operation) 350 A 420 A 350 A 420 A I TAV (sin. 180; T case = . . .) V V V/µs 900 1300 1500 1700 1900 2100 2300 800 1200 1400 1600 1800 2000 2200 1000 1000

Contextual Info: s e MIKRO n zurück V rsm V rrm dv/ Itrms (maximum value for continuous operation V drm dt)cr 75 A V V V/|xs 500 400 500 SEMIPACK 1 Thyristor / Diode Modules Itav (sin. 180; T oase = 68 °C) 48 A - - SKKH 41/04 D - 700 600 500 SKKT 41/06 D SKKT 42/06 D

skkt 90 / 12

Contextual Info: s e MIKRO n zurück V rsm V rrm dv/ V drm dt cr V V V/|xs 500 400 500 It r m s SEMIPACK 1 Thyristor / Diode Modules (maximum value for continuous operation) 150 A It a v (sin. 180; Toase = 85°C) 95 A - - SKKH 91/04 D - 700 600 500 SKKT 91/06 D SKKT 92/06 D

Contextual Info: SEMIKRON zurück V rsm V rrm dv/ Itrms (maximum value for continuous operation V drm dt)cr 125 A V V V/|xs 700 600 500 SKKT 71/06 D 900 800 SEMIPACK 1 Thyristor / Diode Modules Itav (sin. 180; T oase = 78 °C) 80 A - - SKKH 72/06 D 500 SKKT 71/08 D SKKT 72/08 D1> SKKH 71/08 D

Contextual Info: s e M IK R O n zurück SEMIPACK 1 Thyristor / Diode Modules Itrms m axim um va lu e fo r c o n tin u o u s o p e ra tio n (dv/ V rsm V rrm 50 A V drm dt)cr Itav (sin. 180; T oase = 68 °C) V V V/|xs 32 A 500 400 500 700 600 500 SKKT 26/06 D 900 800 1300 1200

hexfred gen3

Contextual Info: PD - 94655 HF10D060ACE Hexfred Die in Wafer Form Features • GEN3 Hexfred Technology • Low VF • Low IRR • Low tRR • Soft Reverse Recovery Benefits • • • • • Benchmark Efficiency for Motor Control Applications Rugged Transient Performance Low EMI Excellent Current Sharing in Parallel Operation

HF100D060ACE

Abstract: IRGC100B60K
Contextual Info: PD - 94619 HF100D060ACE Hexfred Die in Wafer Form Features • GEN3 Hexfred Technology • Low VF • Low IRR • Low tRR • Soft Reverse Recovery Benefits • • • • • Benchmark Efficiency for Motor Control Applications Rugged Transient Performance Low EMI

Contextual Info: PD - 94616 HF75D060ACE Hexfred Die in Wafer Form Features • GEN3 Hexfred Technology • Low VF • Low IRR • Low tRR • Soft Reverse Recovery Benefits • • • • • Benchmark Efficiency for Motor Control Applications Rugged Transient Performance Low EMI Excellent Current Sharing in Parallel Operation

Contextual Info: APT30M19JVFR A dvanced P o w er Te c h n o l o g y 300V POWER MOSV 130A 0.019CÌ iFREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

HA-1370S

Abstract: IRGC75B120KB HF70D120ACE
Contextual Info: PD - 93878 HF70D120ACE Hexfred Die in Wafer Form Features • • • • • GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery • • • • Benchmark Efficiency for Motor Control Applications Rugged Transient Performance Low EMI Excellent Current Sharing in Parallel Operation

HF72D120ACE

Abstract: IRGC100B120KB
Contextual Info: PD - 93879 HF72D120ACE Hexfred Die in Wafer Form Features • • • • • GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery • • • • Benchmark Efficiency for Motor Control Applications Rugged Transient Performance Low EMI Excellent Current Sharing in Parallel Operation

diode Vr 1200v

Abstract: HF30D120ACE IRGC15B120KB
Contextual Info: PD - 93875 HF30D120ACE Hexfred Die in Wafer Form Features • • • • • GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery • • • • Benchmark Efficiency for Motor Control Applications Rugged Transient Performance Low EMI Excellent Current Sharing in Parallel Operation

HF40D120ACE

Abstract: IRGC25B120KB
Contextual Info: PD - 93876 HF40D120ACE Hexfred Die in Wafer Form Features • • • • • GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery • • • • Benchmark Efficiency for Motor Control Applications Rugged Transient Performance Low EMI Excellent Current Sharing in Parallel Operation

Contextual Info: APT5024BVR A dvanced P o w er Te c h n o l o g y 500V 22A 0.240Í1 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

Contextual Info: APT20M45SVR A dvanced W 7Æ P o w e r Te c h n o lo g y 200V 56A 0.0450 POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

Contextual Info: ADVANCED POWER TECHNOLOGY b3E D 0557^ ÜDOllbfl 704 H A V P ADVANCED POW ER TECHNOLOGY' APT2X31D60J APT2X31D50J APT2X31D40J 600V 500V 400V 30A 30A 30A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS PRODUCT FEATURES

Contextual Info: APT20M22JVR ADVANCED P o w er T e c h n o lo g y 200V 97A 0 .0220. POWER MOS V Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

STPS1545CT

Abstract: STPS1545 STPS1545CR STPS1545CF STPS1545CFP STPS1545CG STPS1545CG-TR STPS15 CR diode transient
Contextual Info: STPS1545CT/CF/CG/CFP/CR POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF AV 2 x 7.5 A VRRM 45 V Tj (max) 175 °C VF (max) 0.57 V FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING INSULATED PACKAGE:

Contextual Info: A P T 10M 11 LV R A dvanced W 7Æ P o w e r Te c h n o l o g y ioov 100a 0.01m POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: STPS30L45CG/CR/CT/CW LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF AV 2 x 15 A VRRM 45 V Tj (max) 150 °C A1 K A2 K VF (max) 0.50 V K FEATURES AND BENEFITS • ■ ■ ■ Low forward voltage drop meaning very small conduction losses

Contextual Info: APT30M40JVR ADVANCED P ow er Te c h n o l o g y 300v 70a 0 .0 4 0 0 POWER MOS V Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

IRGPS60B120KD

Contextual Info: PD - 94566 HF43D120ACE Hexfred Die in Wafer Form Features • • • • • GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery • • • • Benchmark Efficiency for Motor Control Applications Rugged Transient Performance Low EMI Excellent Current Sharing in Parallel Operation

Contextual Info: APT10M11JVR ADVANCED W 7Æ P o w e r Te c h n o l o g y ioov i44a 0 .01 m POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

self oscillating ccfl

Abstract: ic cd 4015 EEFL eefl inverter IGBT dimming Ignition Transformer SOIC16 IRS2552D irs25 half bridge self oscillating inverter
Contextual Info: July 7, 2009 IRS2552D CCFL/EEFL BALLAST CONTROLLER IC Features • • • • • • • • • • • • • • • • Product Summary Drives up to two IGBT/MOSFET power devices Integrated programmable oscillator Soft start function 15.6 V voltage clamp on VCC