CR DIODE TRANSIENT Search Results

5pgm

Contextual Info: WESTCODE SEMICONDUCTORS Thyristor Modules Thyristor/Diode Modules VRSM VDSM VRRM V 1300 1500 1700 1900 1200 1400 1600 1800 Symbol Test Conditions ITRMS, IFRMS ITAVM, IFAVM TVJ = TVJM TC = 85°C; 180° sine ITSM, IFSM TVJ = 45°C; VR = 0 di/dt cr (dv/dt)cr

000A2s

Abstract: 22516
Contextual Info: WESTCODE SEMICONDUCTORS Thyristor Modules Thyristor/Diode Modules VRSM VDSM VRRM V 1300 1500 1700 1900 1200 1400 1600 1800 Symbol Test Conditions ITRMS ITAVM TVJ = TVJM TC = 85°C; 180° sine ITSM, IFSM TVJ = 45°C; VR = 0 di/dt cr (dv/dt)cr 3 Type WPT 225-12

CR diode transient

Abstract: 064c
Contextual Info: SiBOD Thyristors Description The CR range of protectors are based on the proven technology of the T10 thyristor product. Designed for transient voltage protection of telecommunications equipment, it provides higher power handling than a conventional avalanche diode TVS and

Contextual Info: Description Description The CR range of protectors are based on the proven technology of the T10 thyristor product. Designed for transient voltage protection of telecommunications equipment, it provides higher power handling than a conventional avalanche diode TVS and when compared to a GDT offers lower voltage

Contextual Info: Special Functions RC4447 RC4447 Quad PIN Diode Switch Driver Features currents of the RC4447 are closely controlled through the use of Si-Cr thin-film resistor networks, resulting in repeatable ac character­ istics and a stable dc bias point. Well-matched

C10X

Contextual Info: SKN 26 THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode Rectifier Diode 3$>@ 3$$@ 3 X22 [22 0C22 0X22 3 X22 [22 0C22 0X22 =HM3 V CR M A 6:Z 0[2 ¥] ;7 V 022 ¥OI >BG C1^2X >B$ C1^2X >BG C1^2[ >B$ C1^2[ >BG C1^0C >B$ C1^0C >BG C1^0X >B$ C1^0X 0122 0122 >BG C1^01 SKR 26

SCHEMATIC DIAGRAM OF POWER SAVER DEVICE

Abstract: power saver schematic diagram SCHEMATIC DIAGRAM OF electrical saver BV68 1530Q BM138 D9323 schottky transistor spice I1211 PIN DIODE .cir spice
Contextual Info: Special Functions RC4447 RC4447 Quad PIN Diode Switch Driver Features • ■ ■ ■ ■ ■ ■ ■ currents of the RC4447 are closely controlled through the use of Si-Cr thin-film resistor networks, resulting in repeatable ac character­ istics and a stable dc bias point. Well-matched

GS 069 LF

Abstract: HCA-120 BUK637-500A BUK637-500B BUK637-500C
Contextual Info: N AMER P H I L IPS /D IS CR ET E 55E D • Lb53T31 OQSQbôO S ■ PowerMOS transistor Fast Recovery Diode FET BUK637-500A BUK637-500B BUK637-500C T - 3 ‘M S ' GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a

semikron skkt 90

Abstract: semikron SKK
Contextual Info: VRSM VRRM dv/ VDRM dt cr SEMIPACK 3 Thyristor / Diode Modules ITRMS (maximum values for continuous operation) 350 A 420 A 350 A 420 A I TAV (sin. 180; T case = . . .) V V V/µs 900 1300 1500 1700 1900 2100 2300 800 1200 1400 1600 1800 2000 2200 1000 1000

DINS4

Abstract: transistor wkx RCH-855 D1S54
Contextual Info: Section 4.4.1 STEP-UP REGULATOR SPECIFICATIONS • Description The S-8435/8436 are CMOS step-up switching regulators that consist of a reference voltage source, a CR oscillator, a power MOS FET, a diode, and a comparator. The output voltage is fixed internally, and a shutdown function is available. The current consumption is drastically

HC 8436

Abstract: marcon capacitor ce marcon CE capacitor seiko hc 1000 transistor lr 3303 CACFM D1NS4 diode transistor 2sC3279 S-8435 equivalent tr 2SC3279 equivalent
Contextual Info: STEP-UP SWITCHING REGULATOR S -8 4 3 5 /8 4 3 6 Series The S-8435/8436 Series is a CMOS step-up sw itching regulator that consists of a reference voltage source, a CR oscillation circuit, a pow er MOS FET, a diode, and a com parator. T he output voltage is

Contextual Info: seMIKROn zurück V rsm V rrm dv/ SEMIPACK 3 Thyristor / Diode Modules Itrms (maximum values for continuous operation 240 A 270 A 150 A (85 °C) 172 A (81 °C) 150 A (85 °C) 172 A (81 °C) SKKT SKKT SKKH SKKH V drm dt)cr 240 A 270 A Itav (sin. 180, Tcase —. . .)

Contextual Info: SEMIKRON V rsm dv/d t cr V rrm Itrms (maximum values for continuous operation) 24 A1*; 30 A2* V drm 2 4 A 1>;45A2> SEMIPACK 0 Thyristor / Diode Modules Itav (sin. 180; Toase = 65 °C) V V V/|xs 17,5 A2> 17,5 A2> 500 400 500 SKKT 15/04 D SKKH 15/04 D 700

Contextual Info: s e MIKRO n V rsm V rrm dv/ SEMIPACK 1 Thyristor / Diode Modules Itrms (maximum value for continuous operation 180 A V drm dt)cr Itav (s ¡n - 180; Toase = 80 °C) V V V/|xs 115 A 500 400 500 - - SKKH 105/04 D - 700 600 500 SKKT 105/06 D SKKT 106/06 D

Contextual Info: 51E D • 613bb71 000335^ 3hfi ■ s T k G SEMIKRON INC V rsm V rrm dv/ V drm dt cr V V - SEMIPACK 1 Thyristor/ Diode Modules Itr m s (maximum value for continuous operation) 95 A ITAV (sin. 180; Tease = 74 °C) 60 A V/(.is 500 400 500 SKKH 56/04 D - 700

semikron thyristor skkt

Abstract: semikron skkt 210 semikron skkt 90 semikron thyristor skkt 1000 skkt 90 / 12 SKMT250 semikron skkt 200
Contextual Info: VRSM VRRM dv/ VDRM dt cr SEMIPACK 3 Thyristor / Diode Modules ITRMS (maximum values for continuous operation) 350 A 420 A 350 A 420 A ITAV (sin. 180; Tcase = . . .) V V V/µs 220 A (88 °C) 260 A (82 °C) 220 A (88 °C) 260 A (82 °C) 900 800 500 SKKT 210/08 D

Contextual Info: SEMIKRON Vrsm V rrm dv/ V Ita v (sin. 180; Tease = 85 °C 95 A V/|!S V SEMI PACK 1 Thyristor/ Diode Modules Itrms (maximum value for continuous operation) 150 A V drm dt)cr _ - SKKH 91/04 D - SKKH 91/06 D SKKH 92/06 D 500 SKKT 91/08 D SKKT 92/08 D1) SKKH 91/08 D

Contextual Info: s e MIKROn V rsm V rrm dv/ V drm dt cr V V SEMIPACK 1 Thyristor/ Diode Modules ITRMS (maximum value for continuous operation) 125 A ITAV (sin. 180; Tease = 78 °C) 80 A V/^S - 700 600 500 SKKT 71/06 D 900 800 500 SKKT 71/08 D SKKT 72/08 D1) SKKH 71/08 D

Contextual Info: s e MIKRO n zurück V rsm V rrm dv/ Itrms (maximum value for continuous operation V drm dt)cr 75 A V V V/|xs 500 400 500 SEMIPACK 1 Thyristor / Diode Modules Itav (sin. 180; T oase = 68 °C) 48 A - - SKKH 41/04 D - 700 600 500 SKKT 41/06 D SKKT 42/06 D

Contextual Info: s e MIKRO n zurück V rsm V rrm dv/ SEMIPACK 3 Thyristor / Diode Modules Itrms (maximum values for continuous operation 350 A 420 A 220 A (88 °C) 260 A (82 °C) 220 A (88 °C) 260 A (82 °C) SKKT SKKT SKKH SKKH V drm dt)cr 350 A 420 A Itav (sin. 180, Tcase —. . .)

Contextual Info: s e MIKRO n zurück V rsm V rrm dv/ SEMIPACK 3 Thyristor / Diode Modules Itrms (maximum values for continuous operation 370 A V drm dt)cr 420 A 370 A 420 A Itav (sin. 180; Toase = 85 °C) V 900 V 800 V/|xs SKKT 213 SKKT 253 230 A 253 A 230 A 250 A SKKT

Contextual Info: se MIKRDN V rsm V rrm dv/ V V SEMIPACK 1 Thyristor/ Diode Modules Itrms (maximum value for continuous operation 95 A V drm d t)cr ITAV (sin. 180; Tease = 74 °C) 60 A V/|is 500 400 500 - SKKH 56/04 D - 700 600 500 SKKT 56/06 D SKKT 57/06 D 900 800 SKKH 56/06 D

Contextual Info: s e m ik r o n VRSM V rrm <dv/ V d RM dt cr V Itav sin. 180; Tease = 68 ^C) 48 A V/(iS V SEMIPACK 1 Thyristor/ Diode Modules Itrms (maximum value for continuous operation) 75 A 500 400 500 700 600 500 SKKT 41/06 D SKKT 42/06 D SKKH 41/06 D SKKH 42/06 D

skkt 90

Abstract: SKKT 95 SKKT 57/12 E
Contextual Info: s e M IKRD n V V Itav sin. 180; Tease ~ 74 °C 60 A V/fiS 400 500 SEMIPACK 1 Thyristor/ Diode Modules Itr m s (maximum value for continuous operation) 95 A Vrs M V rrm (d v / V drm d t)cr 500 - - SKKH 56/04 D - 700 600 500 SKKT 56/06 D SKKT 57/06 D SKKH 56/06 D