CQ 100 B Search Results

1S2828A

Abstract: 1S2830A 1S2831A 1SR11-100 1SR11-400 1SR12-200 AI825
Contextual Info: - - - - - 139B 139B 139B 139B 139B 5 S 5 5 5 139A 139A 139A 139A 139B O O O O t— 217 217 139A 139A 139A x x x u u CQ CQ CC CÛ CQ » m it s s s ü # ÍK s«: « ¡W Si U. ^ ^ ^ ” o< = o o = 0 0 = 0 0 = 0 0 = 0 S o o S S 800 100 1000 200 400 O O O O G» <=»0 = 0 0

1SR12-200

Abstract: I39A 1SR141 1S2828A 1S2830A 1S2831A 1SR11-100 1SR11-400
Contextual Info: - - - - - 139B 139B 139B 139B 139B 5 S 5 5 5 139A 139A 139A 139A 139B O O O O t— 217 217 139A 139A 139A x x x u u CQ CQ CC CÛ CQ » m it s s s £ ü # ÍK s«: « ¡W S i U. ^ ^ ^ ” o< = oo = 0 0 = 0 0 = 0 0 = 0 l s s S o o S S 800 100 1000 200 400 O O O O G» <=»0 = 0 0

1S2828A

Abstract: 1S2830A 1S2831A 1SR11-100 1SR11-400 1SR12-200 1sr1540
Contextual Info: - - - - - 139B 139B 139B 139B 139B 5 S 5 5 5 139A 139A 139A 139A 139B O O O O t— 217 217 139A 139A 139A x x x u u CQ CQ CC CÛ CQ » m it s s s £ ü # ÍK s«: « ¡W S i U. ^ ^ ^ ” o< = oo = 0 0 = 0 0 = 0 0 = 0 l s s S o o S S 800 100 1000 200 400 O O O O G» <=»0 = 0 0

CQY99

Abstract: CQY 24 CQY34A CQY33A cqy 35 n CQY31 CQV36 CQY32 CQY35A 1018C
Contextual Info: Optoelectronic devices GaAs diodes infrared Type Group Fig. Nr. Characteristics - electrical + optical Spectral curve (see page 71) >T a $e and ITlW /e at m W /sr <f at / F = 1 A 'F mA ns ns CQY31 7 80° 1 0.25 100 100 100 2 CQ Y 32 8 10° 1 4.5 100 100

Contextual Info: ANALOG DEVICES High Accuracy anyCAP 100 mA Low Dropout Linear Regulator ADP3307 FUNCTIONAL BLOCK DIAGRAM FEATURES 0.8% Accuracy Over Line and Load Regulations @ +25°C Uitraiow Dropout Voltage: 120 mV Typical @ 1 0 0 mA Requires only CQ = 0.47 |xF for Stability

2660-7R

Contextual Info: CQ C Q 1000.C Q 2000 • Output pow er up to 100 W • Continuously open- and short-circuit proof • Input voltage range for 48/60 V batteries • • High efficiency and low thermal stress • Series- or parallel-connection of outputs • Input/output isolation voltage 2 kVrms

Contextual Info: Product Selector Table Gates Device Pkg.C A1010A PL PL PQ PG A1020A # Pins Speed Option*2) Temp.<3> 44 68 100 84 Std. Std. Std. Std. -1, -2 -1 , - 2 -1 , -2 -1 C, C, C. C, PL PL PL PQ CQ JQ JQ JQ PG 44 68 84 100 84 44 68 84 84 Std. Std. Std, Std, Std, Std.

Contextual Info: SIE D • fil3bh71 DDD373L. Maximum Ratings Conditions VcEVsus |c = Ie = V ebo lc ICM If = - lc > CM VCBO lc 1 A, Vbe = - 2 V ! II LU CQ > VcEV Units 600 V 600 V 600 V 7 V 100 A tp = 1 ms 200 A D. C. 100 A 6 A Tease = 25 °C 620 W Ib Ptot Values D. C. = Tvi

IHb si

Contextual Info: fax id: 7060 CYPRESS PRELIMINARY CY74UBL5911 Universal Bus Logic Products & Features • U niversal Bus Logic™ replaces o ver 100 d iffe ren t part num bers w ith o ne device • Typ ical VOLP g ro un d b o u n ce < 1 ,0V at V Cq = 5V, T a = 25 °C

CO-231

Abstract: CO238 CO-238 CO-231T CQ-401 CO-231-T C0-231HT CO-233 kHz-100MHz co-238b
Contextual Info: * *' * TTL Clock Oscillators DIP AND SURFACE MOUNT HYBRIDS CQ-401: HCG-402: C0-406: CO-407: Series Features LCC C0-4D8 4 PIN DIP 14 PIN DIP SURFACE MOUNT ; FLATPACK Smallest size Lowest profHe 16 kHz-100 MHz 1 MHz-60 MHz Accuracy maximum error at 25°C CO-4IOA:

M801

Abstract: M801-3001100
Contextual Info: DRAWING No.: M 801-3001100 IF IN DOUBT - ASK NOT TO SCALE THIRD ANGLE PROJECTION cq ALL DIMENSIONS IN mm 00 -4.4- <D < j> P.C.B LAYOUT DIMENSION d> CIRCUIT SPECIFICATIONS: E L E C T R IC A L RATING: DC 12V 50m A Max. CIRCUIT: SP ST CONTACT RESISTANCE: 100 mQ MAX.

l5911

Abstract: B14E
Contextual Info: fax id: 7060 PRELIMINARY ^CYPRESS CY74UBL5911 Universal Bus Logic TM T yp ical VOLp g ro un d b ou n ce < 1 .0V at V CQ = 5V, Ta = 25°C (< 0 .8 V w ith L o w N o ise fea tu re en a b le d ) Products & Features • U n iversal Bus Logic replaces o ver 100 d iffe ren t part

Contextual Info: GPD252 Q a v a n te k Thin-Film Cascadable Am plifier Module 5 to 200 MHz TYPICAL PERFORMANCE OVER TEMPERATURE Gain @ +5 VDC unless otherwise noted Power O utput N oise Figure fa s *2 è CD * 3 2 £ or e 100 1» Œ *> « 5 * 4 5 . CQ ’S I ; £ SO Frequency, MHz

Contextual Info: SIE » • fll3bt.71 QGQ37SÖ 31Ô M S E K G sëmîkroO pk - Maximum Ratings Symbol VcEVsus Values I Units 1000 CVJ > [ II LU CQ > VcEV Conditions lc = 1 A, Vbe = - 2 V j V 1000 V 1000 V V VcBO Ie = 0 V ebo lc = 0 7 lc D. C. 50 A 100 = 1 ms Tvj - 4 0 . . . + 150

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. REVISIONS D IS T GP 00 LTR DESCRIPTION B 1 HO USING & CONTACTS: c ±0.20 D P O LY E S TE R , PHOSPHOR BLACK, UL 94V-0 DWN

Contextual Info: Central CMPT2907A Sem iconductor Corp. PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose

CQY11C

Abstract: CQY49C CQY11B CQY95 CQY24A CQY49B CQY50 CQY88 diffuse optical CQY94
Contextual Info: Photodevices light emitting diodes infrared emitting b o o kl part 3 D ra w in g re fe re nce G a A s d io d e s e m ittin g n e ar in fr a r e d ra d ia tio n f o r use in o p tic a l tr a n s m is s io n o f in fo r m a t io n , o p to e le c t r o n ic c o u p lin g s a n d m o n o c h r o m a tic source»

8170S18

Contextual Info: Preliminary GS8170S18/36/72B-333/300/250 18Mb Σ1x1 MultiMode SRAM 1M x 18, 512K x 36, 256K x 72 209-Bump BGA Commercial Temp Industrial Temp 250 - 333 MHz 1.8 V VDD 1.8 V and 1.5 V I/O Features • User-configurable Early, Late and Double Late Write mode

2F8M

Abstract: 6N5P SRAM 8T CAPACITOR 5n 680 4J
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview 8MB Double Data Rate HSTL I/O Fast SRAM The MCM64E918 / MCM64E836 are 8M–bit pipelined burst synchronous late write fast static RAMs designed to provide very high data bandwidth in secondary cache applications. The MCM64E918 organized as 512K words by 18 bits wide

SD4590

Abstract: atcb M208 20AWG R45X 2x200
Contextual Info: SD4590 RF POWER TRANSISTORS 800-960 MHz CELLULAR BASE STATION ν ν ν ν ν ν ν ν GOLD METALLIZATION DIFFUSED EMITTER BALLASTING INTERNAL INPUT/OUTPUT MATCHING COMMON EMITTER CONFIGURATION DESIGNED FOR LINEAR OPERATION HIGH SATURATED POWER CAPABILITY 26 VOLT,

MCM64E836

Abstract: MCM64E918
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 8MB Double Data Rate HSTL I/O Fast SRAM The MCM64E918/MCM64E836 are 8M–bit pipelined burst synchronous late write fast static RAMs designed to provide very high data bandwidth in secondary cache applications. The MCM64E918 organized as 512K words by 18 bits wide

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44645084, 44645094, 44645184, 44645364 72M-BIT QDRTM II SRAM 4-WORD BURST OPERATION Description The μPD44645084 is a 8,388,608-word by 8-bit, the μPD44645094 is a 8,388,608-word by 9-bit, the μPD44645184 is a

zo 107 MA

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44645082, 44645092, 44645182, 44645362 72M-BIT QDRTM II SRAM 2-WORD BURST OPERATION Description The μPD44645082 is a 8,388,608-word by 8-bit, the μPD44645092 is a 8,388,608-word by 9-bit, the μPD44645182 is a

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44646094, 44646184, 44646364, 44646096, 44646186, 44646366 72M-BIT DDR II+ SRAM 2.0 & 2.5 Cycle Read Latency 4-WORD BURST OPERATION Description The μPD44646094 and μPD44646096 are 8,388,608-word by 9-bit, the μPD44646184 and μPD44646186 are