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CPD66X Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: PROCESS CPD66X Low Leakage Diode Low Leakage Diode Chip PROCESS DETAILS Die Size 17.5 x 17.5 MILS Die Thickness 5.9 MILS Anode Bonding Pad Area 7.9 MILS DIAMETER Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER	Original	CPD66X CMOD3003 CMLD3003DOG CMPD3003A CMPD3003C CMPD3003S 19-July	PDF
CPD64 Abstract: 1N3595 1n457a equivalent Contextual Info: PCN # 110 Notification Date: 21 April 2009 mailto:processchange@centralsemi.com http://www.centralsemi.com/processchange Process Change Notice Parts Affected: Chip process CPD64, Low Leakage Diode discrete semiconductors, wafers, and die in chip form. Extent of Change:	Original	CPD64, CPD64-CLL459A-CT CPD64-CMPD3003-CT CPD64-CMPD3003-WN CPD64-1N3595-CT CPD64-1N3595-WN CPD64-1N3595-WR CPD64-1N457A-CT CPD64-1N485B-CT CMDD3003 CPD64 1N3595 1n457a equivalent	PDF

Catalog Datasheet

Type

Document Tags

PDF

Contextual Info: PROCESS CPD66X Low Leakage Diode Low Leakage Diode Chip PROCESS DETAILS Die Size 17.5 x 17.5 MILS Die Thickness 5.9 MILS Anode Bonding Pad Area 7.9 MILS DIAMETER Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER

Original

CPD66X CMOD3003 CMLD3003DOG CMPD3003A CMPD3003C CMPD3003S 19-July

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CPD64

Abstract: 1N3595 1n457a equivalent
Contextual Info: PCN # 110 Notification Date: 21 April 2009 mailto:processchange@centralsemi.com http://www.centralsemi.com/processchange Process Change Notice Parts Affected: Chip process CPD64, Low Leakage Diode discrete semiconductors, wafers, and die in chip form. Extent of Change:

Original

CPD64, CPD64-CLL459A-CT CPD64-CMPD3003-CT CPD64-CMPD3003-WN CPD64-1N3595-CT CPD64-1N3595-WN CPD64-1N3595-WR CPD64-1N457A-CT CPD64-1N485B-CT CMDD3003 CPD64 1N3595 1n457a equivalent

PDF