CPD109R Search Results
CPD109R Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
CFSH01-30LContextual Info: PROCESS CPD109R Schottky Diode Low VF Schottky Diode Chip PROCESS DETAILS Die Size 8.3 x 8.3 MILS Die Thickness 3.9 MILS Anode Bonding Pad Area 5.4 x 5.4 MILS Top Side Metalization Al - 20,000Å Back Side Metalization Au - 12,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER |
Original |
CPD109R CFSH01-30L 13-April CFSH01-30L |