CP794R Search Results
CP794R Datasheets Context Search
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Contextual Info: PROCESS CP794R Small Signal MOSFET Transistor P - Channel Enhancement-Mode Transistor Chip PROCESS DETAILS Die Size 15.7 x 15.7 MILS Die Thickness 3.9 MILS Gate Bonding Pad Area 3.9 x 3.9 MILS Source Bonding Pad Area 9.1 x 8.1 MILS Top Side Metalization Al-Si - 35,000Å |
Original |
CP794R CEDM8004 CMLM0584 CMLDM7484 29-July |