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Catalog Datasheet	Type	Document Tags	PDF
CMLT7820G Abstract: CMPT7820 CXT7820 Contextual Info: PROCESS CP782X Small Signal Transistor PNP - Low VCE SAT Transistor Chip PROCESS DETAILS Die Size 26 x 26 MILS Die Thickness 5.9 MILS Base Bonding Pad Area 5.5 x 5.5 MILS Emitter Bonding Pad Area 5.5 x 5.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization	Original	CP782X CMLT7820G CMPT7820 CXT7820 CMLT7820G CMPT7820 CXT7820	PDF

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CMLT7820G

Abstract: CMPT7820 CXT7820
Contextual Info: PROCESS CP782X Small Signal Transistor PNP - Low VCE SAT Transistor Chip PROCESS DETAILS Die Size 26 x 26 MILS Die Thickness 5.9 MILS Base Bonding Pad Area 5.5 x 5.5 MILS Emitter Bonding Pad Area 5.5 x 5.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization

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CP782X CMLT7820G CMPT7820 CXT7820 CMLT7820G CMPT7820 CXT7820

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