CP 08 DIODE Search Results

TD62164AP

Contextual Info: TD62081AP/CP/F, TD62082AP/CP/F TD62083AP/CP/F, TD62084AP/CP/F INPUT CURRENT I jn mA I IN _ VIN INPUT VOLTAGE I IN _ VIN V ¡ N (V ) !q UT “ V CE(sat) 3.0 600 CURRENT I j N (mA) TD6 2 08 4A P/C P /F f r 2.0 400 V4à Y 4-/ / MAX. 1 .0 200 INPUT / M IN. /

TMPZ84C015

Abstract: PC ladder diagram pc worx CP215 IEC61131
Contextual Info: CP 215 IB INTERBUS Control Panel With Programming Capabilities According to IEC 61131-3 Data Sheet 6102A 08/2000 This data sheet is intended to be used in association with the user manual "Description and Installation of the CP 215 IB Control Panel". Product Description

1278n

Abstract: 4J40
Contextual Info: 4302271 □D2SS7T 2 « H A S 37E » HARRIS SEMICOND SECTOR Tecnmcai uaia Advance Information 574 564 DO-01 -08 — 03-D4-D9-06 — 07-OE-1 CP - -QO QÖ — 01 QÎ — 02 02 — 03 03 — 04 04 — 05 03 — 06 06 — 07 07 Vcc'2° GN0al0 »»•41414

Contextual Info: ADV MI CR O -CMEMORY} ai dËJ D5S7S5Ö 0035574 0 2 5 7 5 2 8 ADV MICRO MEMORY 4 :89D 2 5 5 7 4 D ^ T^ 4 6-23-08 Am 3101 64-Bit Write Transparent, Inverting Output, Bipolar RAM > i DISTINCTIVE CHARACTERISTICS • • • CP High speed Fully decoded 16-word x 4-bit Schottky RAMs

54fct823a

Contextual Info: FCT Interface Logic HARRIS S E M I C O N D U C T O R HARRIS RCA GE INTERSIL C D54/74FC T823A , CD54/74FCT823BT C D 54/74FCT824A, CD54/74FCT824BT July 1990 OE- QO • Q1 • Q2 • Q3 ■0 4 ■ Q5 ■ 06 ■ Q7 ■ 08 - CP "M R FUNCTIONAL DIAGRAM 00 Q1 02

MA4SPS502

Contextual Info: SURMOUNTTM PIN Diode MA4SPS502 V1 Absolute Maximum Ratings1 @ TA = +25 °C unless otherwise specified Features • • • • • • • Surface Mount Device No Wirebonds Required Rugged Silicon-Glass Construction Silicon Nitride Passivation Polymer Scratch Protection

MA4SPS502

Abstract: 80E08
Contextual Info: MA4SPS502 Surface Mount Monolithic PIN Diode Chip Features n n n n n n n Case Style ODS-12701,2 Surface Mount Device No Wirebonds Required Rugged Silicon-Glass Construction Silicon Nitride Passivation Polymer Scratch Protection Low Parasitic Capacitance and Inductance

Contextual Info: QSFCT2X273T PRELIMINARY ö 16-Bit Register with Asynchronous Reset in QVSOP qs74fct2X273t FEATURES/BENEFITS • Function compatible to the 74F273 74FCT273 and 74ABT273 • CMOS power levels: <15 mW static • Available in 40-Pin QVSOP • Undershoot clamp diodes on all inputs

M.P Diode

Abstract: titanium M2 DIODE Diode M2 MP transistor MP2013 P4M2
Contextual Info: Mpulse Microwave 576 Charcot Ave, San Jose, CA 95131 408 432-1480 FAX: (408) 432-3440 http://www.mpulsemw.com e-mail: techsupport@mpulsemw.com Microwave Schottky Diodes FEATURES High F CO - N Type Low I/F Noise - P Type Sputtered Contacts for Optimum Bondability and Reliability

Contextual Info: QSFCT2X273T PRELIMINARY Q 16-Bit Register with Asynchronous Reset nchronous R < in QVSOP qs74fct2X273t FEATURES/BENEFITS • Function compatible to the 74F273 74FCT273 and 74ABT273 • CMOS power levels: <15 mW static • Available in 40-Pin QVSOP • Undershoot clamp diodes on all inputs

D1409

Abstract: 74ABT273 74F273 74FCT273 QS74FCT2X273T 1229h
Contextual Info: QSFCT2X273T PRELIMINARY Q 16-Bit Register with Asynchronous Reset in QVSOP QS74FCT2X273T FEATURES/BENEFITS • Function compatible to the 74F273 74FCT273 and 74ABT273 • CMOS power levels: <15 mW static • Available in 40-Pin QVSOP • Undershoot clamp diodes on all inputs

Contextual Info: METELICS CORP Î H E T -0 7 -0 7 0 I fc.051352 □ GOGG'H 5 | MSS-40,000 Series Medium Barrier Schottky Diode metelics CORPORATION Features Applications • Low Rs — 5fi • Low NF • Mixers: single diode, image reject, image enhancement, ring quad • Broad optimum L.O. power range

10n90

Contextual Info: Connectivity solutions for photovoltaic power systems LC4 -CP – Connector Parts without cable LC4 CP 970 LC4® in line diode connector assembly for photovoltaic installations1, overmolded, plug plug LC4 CP 970 IT 1. Temperature range 40 °C/+85 °C +110 °C upper limit temperature

UL746A

Contextual Info: Connectivity solutions for photovoltaic power systems LC3 -CP – Connector Parts without cable LC3 CP 970 LC3® in line diode connector assembly for photovoltaic installations1, overmolded, plug plug 1. Temperature range 2. Materials Insulating body/housing

Contextual Info: Microwave Abrupt Tuning Diodes and Chips Features • ■ ■ ■ ■ Highest Q Values Available Widest Range of Capacitance, Voltage, and Package Styles Low Post-Tuning Drift High Stability, Low Leakage Meet All MIL-STD-750 Requirements Types ■ ■ DVH6700 Series

TD62083AP

Abstract: 62083A 62082cp 62084 types
Contextual Info: TD62081AP/CP/F, TD62082AP/CP/F TD62083AP/CP/F, TD62084AP/CP/F o 8ch DARLINGTOM DRIVER Unit in mm FEATURES . Output Rating . Type-AP Type-F 50V/500mA MAX. 35V/5 00mA 1IAX. Type-CP lOOV/AOOmA MAX. . Output Clamp Diode . Package .

Contextual Info: INTEGRATED CIRCUITS 74AC574/74ACT574 Octal D-type flip-flop; positive edge-trigger 3-State Product specification Philips Semiconductors 1997 Apr 08 Philips Semiconductors Product specification 74AC574 74ACT574 Octal D-type flip-flop; positive edge-trigger (3-State)

74ALS299

Contextual Info: QSFCT299T High Speed CMOS 8-Bit Universal Shift Register ß FEATURES/BENEFITS • • • • • Pin and function compatible to the 74F299 74FCT299 and 74ALS299 CMOS power levels: <7.5 mW static Available in DIP, SOIC, QSOP, ZIP, HQSOP Undershoot clamp diodes on all inputs

Lumberg

Abstract: photovoltaic module
Contextual Info: Connectivity solutions for photovoltaic power systems LC4 -JC – Junction boxes for Crystalline modules LC3 JC LC4 JC Photovoltaic junction box for crystalline modules1, with connecting cables and connectors alternatively LC3® or LC4® , with 2–6 spring clamps and 0–5 diodes

diode 77G

Abstract: 77G DIODE DIODE ON SEMICONDUCTOR B34 b34 diodes on semiconductor DVH6700 varactor diode capacitance measurement dvh6731 CVH2000 DVH6742-11 varactor alpha
Contextual Info: ALPHA IND/ SEMICONDUCTOR HfiE J> • 0SA5443 0001301 Tbl M k L P Microwave Abrupt Tuning Diodes and Chips Features ■ ■ ■ ■ ■ Highest Q Values Available Widest Range of Capacitance, Voltage, and Package Styles Low Post-Tuning Drift High Stability, Low Leakage

dvh6731

Contextual Info: ALPHA IND/ S E M I C O N D U C T O R 4fiE D • 0 5 6 5 4 4 3 00D 1 30 1 Tbl * A L P Microwave Abrupt Tuning Diodes and Chips Features ■ ■ ■ ■ ■ Highest Q Values Available Widest Range of Capacitance, Voltage, and Package Styles Low Post-Tuning Drift

Contextual Info: MSS-30,000 Series Low Barrier Schottky Diode metelics CORPORATION Features Applications • L o w Rs— 5Q • Mixers: single diode, im age reject, im age enhancem ent, ring quad • Lo w NF • Doublers • A vailable in m any configurations • M odulators

MSS-40 schottky diode

Abstract: 448-E45 RS+30+12VDC+BL/m38 schottky metelics FSCM 59365
Contextual Info: MSS-40,000 Series Medium Barrier Schottky Diode metelics CORPORATION Features Applications • Low Rs — 50 • Low NF • Mixers: single diode, image reject, image enhancement, ring quad • Broad optimum L.O. power range • Doublers • Available in many configurations

MADP-000421-12940P

Abstract: 25E-13 MA4SPS422 PIN diode MACOM SPICE model HP4291A MA4SPS421 MA4SPS42X ODS-186
Contextual Info: MA4SPS42X Series SURMOUNTTM PIN Diodes MA4SPS421, MA4SPS422 M/A-COM Products RoHS Compliant Rev. V6 MA4SPS421 MA4SPS422 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Surface Mount No Wire Bonding Required Rugged Silicon-Glass Construction Silicon Nitride Passivation