COUNTERFEIT FCB20N60 Search Results

Contextual Info: FCB20N60F_F085 N-Channel MOSFET December 2013 FCB20N60F_F085 N-Channel MOSFET 600V, 20A, 190mΩ D D Features „ Typ rDS on = 171mΩ at VGS = 10V, ID = 20A „ Typ Qg(tot) = 78nC at VGS = 10V, ID = 20A G „ UIS Capability „ RoHS Compliant G „ Qualified to AEC Q101

mosfet 600V 20A

Abstract: Mosfet 600V, 20A
Contextual Info: FCB20N60F_F085 600V N-Channe MOSFET D D 600V, 20A, 190mΩ Features G „ Typ rDS on = 171mΩ at VGS = 10V, ID = 20A „ Typ Qg(tot) = 78nC at VGS = 10V, ID = 20A G „ UIS Capability TO-263AB FDB SERIES S „ RoHS Compliant „ Qualified to AEC Q101 S For current package drawing, please refer to the Fairchild

Contextual Info: SuperFETTM FCB20N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and

mosfet 10a 600v

Abstract: FCB20N60F FCB20N60FTM ED60a
Contextual Info: SuperFET FCB20N60F TM 600V N-CHANNEL FRFET Features Description • 650V @ TJ = 150°C SuperFETTM is,Fairchild' s proprietary,new generation ofhigh voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and

FCB20N60

Abstract: counterfeit FCB20N60 mosfet 20a 300v mosfet 600V 20A Mosfet 600V, 20A
Contextual Info: SuperFET FCB20N60 TM 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and

Contextual Info: FCB20N60F N-Channel SuperFET FRFET® MOSFET 600 V, 20 A, 190 mΩ Features Description • 650V @TJ = 150°C SuperFET® MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching

Contextual Info: FCB20N60_F085 N-Channel MOSFET November 2013 FCB20N60_F085 N-Channel MOSFET 600V, 20A, 198mΩ D D Features „ Typ rDS on = 173mΩ at VGS = 10V, ID = 20A „ Typ Qg(tot) = 72nC at VGS = 10V, ID = 20A G „ UIS Capability „ RoHS Compliant G „ Qualified to AEC Q101

Contextual Info: FCB20N60F N-Channel SuperFET FRFET® MOSFET 600 V, 20 A, 190 m Features Description • 650 V @TJ = 150 °C SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology

Contextual Info: FCB20N60 N-Channel SuperFET MOSFET 600 V, 20 A, 190 mΩ Features Description • 650V @TJ = 150°C SuperFET® MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching

Contextual Info: FCB20N60 N-Channel SuperFET MOSFET 600 V, 20 A, 190 mΩ Features Description • 650 V @TJ = 150 °C SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology