COSMORAM REVISION 4 Search Results

cosmoram synchronous

Abstract: MB82DBS02163E-70L
Contextual Info: FUJITSU SEMICONDUCTOR INTRODUCTION SHEET NP05-11450-2E TM 32 Mbit Mobile FCRAM 1.8 V, Burst Mode & Page Mode MB82DBS02163E-70L FEATURES • • • • Pseudo SRAM with Asynchronous / Synchronous SRAM Interface COSMORAM Common Specifications for Mobile RAM Revision 2

cosmoram

Contextual Info: FUJITSU MICROELECTRONICS INTRODUCTION SHEET NP05-11454-1E 128 Mbit Mobile FCRAM 1.8 V, Burst Mode MB82DBS08164D-70L TM FEATURES • • • Pseudo SRAM with Single Data Rate SDR Burst Interface COSMORAM (Common Specifications for Mobile RAM ) Revision 3

cosmoram synchronous

Contextual Info: FUJITSU MICROELECTRONICS INTRODUCTION SHEET NP05-11462-1E TM 32 Mbit Mobile FCRAM 1.8 V, Burst Mode & Page Mode MB82DBS02163F-70L FEATURES • • • • Pseudo SRAM with Asynchronous / Synchronous SRAM Interface COSMORAM Common Specifications for Mobile RAM Revision 2

Contextual Info: FUJITSU SEMICONDUCTOR INTRODUCTION SHEET NP05-11448-1E 64 Mbit Mobile FCRAM 1.8 V, Burst Mode MB82DBS04164E-70L TM FEATURES • • • Pseudo SRAM with Single Data Rate SDR Burst Interface Complies with Common Specifications for Mobile RAM (COSMORAM) Revision 3

MB82DBS04164E-70L

Contextual Info: FUJITSU SEMICONDUCTOR INTRODUCTION SHEET NP05-11448-2E TM 64 Mbit Mobile FCRAM 1.8 V, Burst Mode & Page Mode MB82DBS04164E-70L FEATURES • • • Pseudo SRAM with Single Data Rate SDR Burst Interface Complies with Common Specifications for Mobile RAM (COSMORAM) Revision 3

CosmoRAM Revision 4

Abstract: MB82DDS08314A-75L
Contextual Info: FUJITSU SEMICONDUCTOR INTRODUCTION SHEET NP05-11444-2E 256 Mbit Mobile FCRAM 1.8 V, DDR Burst Mode MB82DDS08314A-75L TM FEATURES • • • • • • • • Pseudo SRAM with Double Data Rate DDR Burst Interface Compliant with Common Specifications for Mobile RAM (COSMORAM) Revision 4

NP05-11446-2E

Abstract: MB82DBS16164A-80L 250 MHZ SDR RAM
Contextual Info: FUJITSU SEMICONDUCTOR INTRODUCTION SHEET NP05-11446-2E 256 Mbit Mobile FCRAM 1.8 V, SDR Burst Mode MB82DBS16164A-80L TM FEATURES • • • • Pseudo SRAM with Single Data Rate SDR Burst Interface Compliant with Common Specifications for Mobile RAM (COSMORAM) Revision 3

400M

Abstract: MB82DBS08314A-80L
Contextual Info: FUJITSU SEMICONDUCTOR INTRODUCTION SHEET NP05-11445-2E 256 Mbit Mobile FCRAM 1.8 V, SDR Burst Mode MB82DBS08314A-80L TM FEATURES • • • • • • Pseudo SRAM with Single Data Rate SDR Burst Interface Compliant with Common Specifications for Mobile RAM (COSMORAM) Revision 3

MB82DBS04154E-70L

Contextual Info: FUJITSU SEMICONDUCTOR INTRODUCTION SHEET NP05-11452-2E TM 64 Mbit Mobile FCRAM 1.8 V, Burst Mode, Multiplexed Address and Data Bus MB82DBS04154E-70L FEATURES • • • • Pseudo SRAM with Single Data Rate SDR Burst Interface COSMORAM (Common Specifications for Mobile RAM ) Revision 3

MB82DBS02154E-70L

Contextual Info: FUJITSU SEMICONDUCTOR INTRODUCTION SHEET NP05-11451-2E TM 32 Mbit Mobile FCRAM 1.8 V, Burst Mode, Multiplexed Address and Data Bus MB82DBS02154E-70L FEATURES • • • • Pseudo SRAM with Single Data Rate SDR Burst Interface COSMORAM (Common Specifications for Mobile RAM ) Revision 3

Contextual Info: FUJITSU SEMICONDUCTOR NEW PRODUCTS NP05-11445-1E 256 Mbit Mobile FCRAMTM 1.8 V, SDR Burst Mode MB82DBS08314A-80L New released • FEATURES • • • • • • Pseudo SRAM with Single Data Rate (SDR) Burst Interface Compliant with Common Specifications for Mobile RAM (COSMORAM) Revision 3

lpddr

Abstract: TRCD3C 256-MBIT
Contextual Info: New Products MB82DDS08314A MB82DBS08314A 256M-bit Mobile FCRAM TM Memories for Mobile Applications MB82DDS08314A/MB82DBS08314A 256M-bit Mobile FCRAM with 1.8V power supply voltage conforming to COSMORAM specification. These products adopt DDR burst mode and SDR burst

COSMO MARKING

Abstract: S71WS128JB0 S71WS128JC0 S71WS256JC0 WS128J cosmo MARKING CODE COSMO DEVICE MARKING COSMO DEVICE MARKING DATE cosmoram synchronous
Contextual Info: S71WSxxxJ based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CosmoRAM ADVANCE DATASHEET Distinctive Characteristics MCP Features „ „ Power supply voltage of 1.7 to 1.95V

71WS256NC0BAIAU

Abstract: cosmoram synchronous S71WS256NC0 S71WS256ND0 S71WS512ND0 TSD084 S71WS512NC0BFIAZ SA002
Contextual Info: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CosmoRAM ADVANCE INFORMATION Distinctive Characteristics

Contextual Info: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-Chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CosmoRAM ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications

TBA 616 datasheet

Abstract: SA047-SA050 sample code read and write flash memory spansion wireless design guide 13th S29WS064N S29WS128N S29WS256N S29WS-N S75WS256NDF S75WS-N
Contextual Info: S75WS256Nxx Based MCPs Stacked Multi-Chip Product MCP 256 Megabit (16M x 16-bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128 Mb (8M/4M x 16-Bit) CosmoRAM and 512 Mb ( 32M x 16-bit) Data Storage Data Sheet PRELIMINARY Notice to Readers: This document states the current technical specifications

4a2g

Abstract: L8212 S71WS-J
Contextual Info: S71WS-J Based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CosmoRAM Data Sheet PRELIMINARY 1RWLFH WR 5HDGHUV 7KLV GRFXPHQW LQGLFDWHV VWDWHV WKH FXUUHQW WHFKQLFDO

Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS05-11448-1E MEMORY Mobile FCRAMTM CMOS 64M-Bit 4M-word x 16-bit Mobile Phone Application Specific Memory MB82DBS04164E-70L • DESCRIPTION The MB82DBS04164E is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous Static

BL 3102

Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS05-11448-2E MEMORY Mobile FCRAMTM CMOS 64M-Bit 4M-word x 16-bit Mobile Phone Application Specific Memory MB82DBS04164E-70L • DESCRIPTION The MB82DBS04164E is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous Static

Contextual Info: S71WS-J Based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CosmoRAM Data Sheet PRELIMINARY 1RWLFH WR 5HDGHUV 7KLV GRFXPHQW LQGLFDWHV VWDWHV WKH FXUUHQW WHFKQLFDO

cosmoram

Abstract: cosmoram synchronous MB82DBS08164C-70L
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11435-1E MEMORY Mobile FCRAMTM CMOS 128 M Bit 8 M wordx16 bit Mobile Phone Application Specific Memory MB82DBS08164C-70L • DESCRIPTION The FUJITSU MB82DBS08164C is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous

Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS05-11454-1E MEMORY Mobile FCRAMTM CMOS 128 M Bit 8 M wordx16 bit Mobile Phone Application Specific Memory MB82DBS08164D-70L • DESCRIPTION The FUJITSU MICROELECTRONICS MB82DBS08164D is a CMOS Fast Cycle Random Access Memory

CosmoRAM Revision 4

Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS05-11462-1E MEMORY Mobile FCRAMTM CMOS 32M-Bit 2M-word x 16-bit Mobile Phone Application Specific Memory MB82DBS02163F70L • DESCRIPTION The MB82DBS02163F is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous Static

Contextual Info: S75WS256Nxx Based MCPs Stacked Multi-Chip Product MCP 256 Megabit (16M x 16-bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128 Mb (8M/4M x 16-Bit) CosmoRAM and 512 Mb ( 32M x 16-bit) Data Storage Data Sheet PRELIMINARY 1RWLFH WR 5HDGHUV 7KLV GRFXPHQW VWDWHV WKH FXUUHQW WHFKQLFDO VSHFLILFDWLRQV