COPAC Search Results

MICROCAP

Abstract: MC300 capacitor 0.1 50v MC205 XC-01 MC203 MC302 MC303 capacitor characteristics MC301
Contextual Info: EASTRON CORP 4GE Eastron M IC R O - C A P D • 3 D 7 4 H74 0000127 1 ■ EAS T-cn-IR W i pf to 5 pf V o l t a i « V a r ia b le S a p a c it o r CHARACTERISTICS AND RATINGS ? 25 C Copacity d V n * 4VJc Typ« Minimum Saturation Maximum Voltage i Inveri»

Contextual Info: 1 SPECIFICATION 53 *o, a D 6,3.o CO Mating Cyc1es 500 F i l t e r type C Copac i tonce 470pf±20% Working Vo 1toge 10Ov Current Rot ing 7.5A Insulat ion Resistance >1GQ FREQUENCY MHz 0 , 8 -° Csl ATTENUATION IdB) 5 PCB Layout, Component side PCB thickness 1.6 mm

Contextual Info: SPECIFICATION D Moling Cycles 500 F iller C type Copac i tonce 3900p f ±20% Working Vo 1tage lOOv Current Roting 7.5A 1nsu1at i on Res i s tonce >1GQ FREQUENCY MHz -t 1 10 11 dB 50 25dB 100 3 5 dB 500 35dB 1000 32 dB CO CO 1 6dB 5 Solder buckets for AWG 20 Mox

Contextual Info: 1 SPECIFICATION 53 *0.t D Nut thread Mot ing Cycles 500 F ilter C type Copac i tonce 470p f ±20% Working Vo 1toge 10Ov Current Rot ing 7.5A Insulot ion Resistance >1Gn FREQUENCY MHz ATTENUATION IdB) 5 PCB Layout, Component si de , thickness 1,6 mm - 10

Contextual Info: SPECIFICATION D 6 .,0 .3 Moling Cyc1es 500 F iller C type Copac i tonce 470pf±20* Working Vo 1toge 10Ov Current Rating 7.5A 1nsu1at ion Resistance >1GQ v— 0,9" FREQUENCY [MHz] 0.2 5 Solder buckets for AWG 20 Mox ATTENUATION IdB - 10 IdB 50 10dB 100 15dB

IRG4PC30FD

Contextual Info: PD 91460B IRG4PC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

IRG4RC10UD

Contextual Info: PD 91571A IRG4RC10UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for medium operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode . • Generation 4 IGBT design provides tighter

IRG4BC30UD

Contextual Info: PD 91453B IRG4BC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

IRG4BC30FD

Abstract: diode bridge LT 405
Contextual Info: PD -91451B IRG4BC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

401m8

Abstract: blu-ray mitsumi Switching Power Supply dvd
Contextual Info: MITSUMI 3ch HD-capable Video Amplifier IC MM1794 3ch HD-capable Video Amplifier IC Monolithic IC MM1794 April 28, 2009 Outline This IC is a wide bandwidth 75Ω driver IC compatible with D3 1080i that was developed for small mobile devices. Since it is compatible with dual power supplies, an output coupling copacitor is not required, which

IRG4PH40UD

Abstract: IGBTs
Contextual Info: PD- 91621B IRG4PH40UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter

AN-994

Abstract: IRG4BC15UD-L IRG4BC15UD-S
Contextual Info: PD - 94083A IRG4BC15UD-S IRG4BC15UD-L INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT C Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery

Contextual Info: 60A Dual Integrated Power Block IRF3546 The IRF3546 dual integrated Power Block copackages two pairs of high performance control and synchronous MOSFETs and is ideal for use in highdensity two-phase synchronous buck converters. It is optimized internally for PCB layout, heat transfer and

IRG4PH50UDPBF

Abstract: 135ns 035H IRFPE30
Contextual Info: PD -95190 IRG4PH50UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter

IRG4PC30FD

Contextual Info: PD 91460B IRG4PC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

LTA 702 N

Abstract: C702 diode C703 diode diode c706 transistor c708 C706 diode DIODE C705 C705 diode transistor ge 703 IRGBC30UD2
Contextual Info: PD - 9.796A IRGBC30UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz

igbt 500V 15A

Abstract: transistor C398 C397 C398 transistor IRGPC40MD2
Contextual Info: Preliminary Data Sheet PD - 9.1084 IRGPC40MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses

Contextual Info: IXA12IF1200TC preliminary I C25 = = VCES VCE sat typ = XPT IGBT Copack 20 A 1200 V 1.8 V C (2) Part number IXA12IF1200TC (G) 1 E (3) Features / Advantages: Applications: Package: ● Easy paralleling due to the positive temperature coefficient of the on-state voltage

IXA4IF1200UC

Contextual Info: IXA4IF1200UC preliminary I C25 = = VCES VCE sat typ = XPT IGBT Copack 9A 1200 V 1.8 V C (2) Part number IXA4IF1200UC (G) 1 E (3) Features / Advantages: Applications: Package: ● Easy paralleling due to the positive temperature coefficient of the on-state voltage

600V 25A Ultrafast Diode

Abstract: Diode 188 IRGPC40KD2
Contextual Info: PD - 9.1114 IRGPC40KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast CoPack IGBT C • Short circuit rated -10µs @125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes

AN-994

Abstract: EIA-541 IRG4RC10SD inverter circuit 200v to 100v
Contextual Info: PD-91678B IRG4RC10SD Standard Speed CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Extremely low voltage drop 1.1V typ @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4

C397

Abstract: IRGPC40MD2
Contextual Info: Preliminary Data Sheet PD - 9.1084 IRGPC40MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses

IRG4PC30UD

Contextual Info: PD 91462B IRG4PC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

diode C721

Abstract: transistor C717 transistor C719 diode C722 transistor C721 diode c723 c721 diode C720 transistor C718 c719 diode
Contextual Info: PD - 9.808A IRGPC40UD2 UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz