CONT BASE 28 Search Results

415 Series

Contextual Info: 415 Series - Screw Terminal SPDT, DPDT, 15 Amps LISTED 225G IND. CONT. EQ. The 415 series is a compact, 15 Amp base mounted industrial relay. It is a versatile relay that offers a variety of contact configurations and options. Excellent contact life assures long mechanical life and

transistor ecg36

Abstract: transistor ECG 152 TRANSISTOR ecg 379 transistor. ECG 123AP transistor ECG 332 ecg 126 transistor TRANSISTOR ECG 69 TRANSISTOR Outlines ecg 123 transistor transistor pnp ecg 180
Contextual Info: PHILIP S E C 6 INC S4E D Transistors cont d ECG Type Description and Application ECG36 NPN-Si, Pwr Amp, Hi Speed ECG36MP* Switch (Compì to ECG37) • bbS3TSfl DDD714b MECG (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo

Contextual Info: ADVANCED POWE R TECHNOLOGY b3E I I S/D JJ5J I A dvanced P ow er Te c h n o lo g y OD M m OSSTiOl DDOllDt APT5020HJN 500V 28.0A 0.200 ^ V ' U L Recognized" File No. E145592 S ISOTOP® POWER MOS IV HALF-BRIDGE ISOTOP PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

APT5020

Abstract: APT5020JN APT5020JN APT
Contextual Info: A D V A N C E D PO WE R TECHNOLOGY b3E ]> • OESVTO'i Ü G 0 1 1 7 b ßflD * A V P A d van ced P o w er Te c h n o l o g y Q D APT5020JN APT5022JN ISOTOP* 500V 500V 28.0A 0.20ÍJ 27.0A 0.22.Q 5 Û "UL Recognized" File No. E145592 S POWER MOS IV' SINGLE DIE ISOTOP® PACKAGE

Hitachi DSAUTAZ005

Contextual Info: HN58V65A Series, HN58V66A Series Package Dimensions HN58V65AP Series HN58V66AP Series DP-28 Unit: mm 35.6 36.5 Max 15 13.4 14.6 Max 28 14 1.2 2.54 ± 0.25 0.48 ± 0.10 0.51 Min 1.9 Max 15.24 2.54 Min 5.70 Max 1 + 0.11 0.25 – 0.05 0° – 15° Hitachi Code

transistor fn 1016

Abstract: Fn 1016 SPO2 spo2 features AN6175K spo2 specifications HF receiver circuit CCITT FILTER mic PRE-AMPLIFIER transistor r1010
Contextual Info: ICs for Telephone AN6175K Hands-free Speech Network IC AN6175K 0.9±0.25 0.5±0.1 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 0.96±0.25 13.7±0.3 4.76±0.25 3.3±0.25 +0.1 5 0.0 3 ~ 15° • Features Unit : mm 1 2 3 4 5 6 7 8 9 10 11

APT5020HJN

Abstract: svi 2003 LM 238 Y DIODE H4B apt5020h 5020HJN
Contextual Info: ADVANCED POLI ER TECHNOLOGY b3E i S/D ö S • □ E 5 7 cï G ci DDOUCm » A V P A d va n ced Pow er T e c h n o lo g y 9 OD .J g j: olJS: ]> APT5020HJN ISOTOP* 500V 28.0A 0.20Q ^ 3 ^ "UL Recognized" File No. E145592 S POW ER MOS IV HALF-BRIDGE ISOTOP PACKAGE

APT8028JVR

Contextual Info: APT8028JVR 28A 0.280Ω Ω 800V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT8028JVR 28A 0.280Ω Ω 800V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT8028JVR 28A 0.280Ω 800V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

714HC

Abstract: 1ER2 APT5020SN
Contextual Info: O D O s A d va n ced P o w er Te c h n o l o g y APT5020SN 500V 28.0A 0.20Í2 POWER MOS IVe N -C H A N N EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All R atinns: 1 Parameter Drain-Source Voltage in locc n th cm rica cnA^ifia.

Contextual Info: O D Ô S ADVANCED P ow er Te c h n o l o g y APT5020SN 500V 28.0A 0.20Ü POWER MOS IV< N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIM UM RATING S Symbol V DSS All Ratings: T c = 25°C unless otherwise specified. Parameter Drain-Source Voltage

vns0a

Contextual Info: SHC615 B U R R -B R O W N I b b M AVAILABLE IN DIE FORM Wide-Bandwidth, DC RESTORATION CIRCUIT FEATURES APPLICATIONS • PROPAGATION DELAY: 2.2ns • BANDWIDTH: OTA: 750MHz Comparator: 280MHz • BROADCAST/HDTV EQUIPMENT • LOW INPUT BIAS CURRENT: -0.3^iA

BUF600

Abstract: OPA621 OPA623 SHC615 SHC615AP SHC615AU operational transconductance amplifier
Contextual Info: SHC SHC615 615 SHC 615 Wide-Bandwidth, DC RESTORATION CIRCUIT FEATURES APPLICATIONS ● PROPAGATION DELAY: 2.2ns ● BROADCAST/HDTV EQUIPMENT ● BANDWIDTH: OTA: 750MHz Comparator: 280MHz ● TELECOMMUNICATIONS EQUIPMENT ● LOW INPUT BIAS CURRENT: –0.3µA

Contextual Info: SH C 615 SHC615 SH C 615 Wide-Bandwidth, DC RESTORATION CIRCUIT FEATURES APPLICATIONS ● PROPAGATION DELAY: 2.2ns ● BROADCAST/HDTV EQUIPMENT ● BANDWIDTH: OTA: 750MHz Comparator: 280MHz ● TELECOMMUNICATIONS EQUIPMENT ● LOW INPUT BIAS CURRENT: –0.3µA

SHC615

Abstract: OTA-C ota patents BUF600 OPA623 SHC615AP SHC615AU emitter switched bipolar transistor PDS-1214C operational transconductance amplifier
Contextual Info: SHC SHC615 615 SHC 615 Wide-Bandwidth, DC RESTORATION CIRCUIT FEATURES APPLICATIONS ● PROPAGATION DELAY: 2.2ns ● BROADCAST/HDTV EQUIPMENT ● BANDWIDTH: OTA: 750MHz Comparator: 280MHz ● TELECOMMUNICATIONS EQUIPMENT ● LOW INPUT BIAS CURRENT: –0.3µA

transistor c815

Abstract: c815 CMOS differential amplifier cascode SHC615 SHC615AP common emitter amplifier d0245 D0242 i100u
Contextual Info: SHC615 BURR-BROWN < • b b ' r I r I AVAILABLE IN DIE FORM Wide-Bandwidth, DC RESTORATION CIRCUIT FEATURES APPLICATIONS • PROPAGATION DELAY: 2.2ns • BROADCAST/HDTV EQUIPMENT • BANDWIDTH: OTA: 750MHz Comparator: 280MHz • TELECOMMUNICATIONS EQUIPMENT

Contextual Info: BU RR - BROW N « E SHC615 1 Wide-Bandwidth, DC RESTORATION CIRCUIT FEATURES APPLICATIONS • PROPAGATION DELAY: 2.2ns • BROADCAST/HDTV EQUIPMENT • BANDWIDTH: OTA: 750MHz Comparator: 280MHz • TELECOMMUNICATIONS EQUIPMENT • LOW INPUT BIAS CURRENT: -0.3*iA

lr 2905 transistor

Contextual Info: B U R R -B R O W N SHC615 ' ï î } AVAILABLE IN DIE FORM Wide-Bandwidth, DC RESTORATION CIRCUIT FEATURES APPLICATIONS • PROPAGATION DELAY: 2.2ns • BROADCAST/HDTV EQUIPMENT • BANDWIDTH: OTA: 750MHz Comparator: 280MHz • TELECOMMUNICATIONS EQUIPMENT

Contextual Info: SHC SHC615 615 SHC 615 Wide-Bandwidth, DC RESTORATION CIRCUIT FEATURES APPLICATIONS ● PROPAGATION DELAY: 2.2ns ● BROADCAST/HDTV EQUIPMENT ● BANDWIDTH: OTA: 750MHz Comparator: 280MHz ● TELECOMMUNICATIONS EQUIPMENT ● LOW INPUT BIAS CURRENT: –0.3µA

Contextual Info: For Immediate Assistance, Contact Your Local Salesperson SHC615 B U R R - B R O W N <! E 1 Wide-Bandwidth, DC RESTORATION CIRCUIT FEATURES APPLICATIONS • PROPAGATION DELAY: 2.2ns • BROADCAST/HDTV EQUIPMENT • BANDWIDTH: OTA: 750MHz Comparator: 280MHz

APT4014BVFR

Abstract: APT4014SVFR
Contextual Info: APT4014BVFR APT4014SVFR 400V POWER MOS V 0.140Ω 28A BVFR FREDFET D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT4014BVFR APT4014SVFR 400V POWER MOS V 0.140Ω 28A BVFR FREDFET D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: SHC SHC615 615 SHC 615 Wide-Bandwidth, DC RESTORATION CIRCUIT FEATURES APPLICATIONS ● PROPAGATION DELAY: 2.2ns ● BROADCAST/HDTV EQUIPMENT ● BANDWIDTH: OTA: 750MHz Comparator: 280MHz ● TELECOMMUNICATIONS EQUIPMENT ● LOW INPUT BIAS CURRENT: –0.3µA