CONNECTOR 26 PIN SEMIKRON Search Results

Contextual Info: SEMIKRON SKiiP 292 GD 170 - 372 WT Absolute Maximum Ratings Symbol |Conditions1 V a lu e s Units 1700 1200 250 500 - 5 5 . . . + 150 4000 230 500 2160 23,4 V V A A °C V A A A kA2S 18 30 75 - 2 5 . . . + 85 V V kV/|xs °C IGBT & Inverse Diode V ces V c c 101

Contextual Info: SEMIKRON Conditions1> Visol 4 AC, Operating / stor. tem perature —I /> Q Symbol —I o Ü SKiiP 292 GD 170 - 375 CTV Absolute Maximum Ratings 1 SKiiPPACK Values min Units 4000 V °C -2 5 .+ 8 5 IGBT and Inverse Diode V ces \/ Operating DC link voltage

Contextual Info: SEMIKRON Symbol Conditions1> Viso, 4 AC, 1 min o—I Ü /— >I Q SKiiP 792 GB 170 - 373 CTV Absolute Maximum Ratings Operating / stor. tem perature SKiiPPACK Values Units 4000 V -25.+85 °C 1700 1200 V V 750 -40.+150 750 1500 6480 210 A °C A A A kAs2

SKCB

Abstract: SKiiP 81 AN 15 T1 SKIIP 81 AC 12 I T1 skcb 2m2-45-3-12 semikron skiip3 SKIIP "2 FOLD" 3m3-45-2-12 IGBT driver IC with PWM output SEMIKRON skiip gb 120 CALCULATION SemiSel
Contextual Info: 3. Dezember 2003 Page: 1 von: 26 8VHU 0DQXDO IRU 6.LL3 6\VWHPV Usage of SKiiP Systems SEMIKRON integrated intelligent Power 1 2 3 4 Main Features of SKiiP Systems . 2

W12 hall sensor

Abstract: LTSR 6-NP 5pin hall sensor L7815 regulator motor selni L7815 ST three phase induction motor control schematics Ametek motor igbt inverter reference schematics 12 volt dc to 110 ac inverter schematics
Contextual Info: UM0428 User manual IGBT Power module evaluation kit - Semitop2 power board Introduction The Semitop2 evaluation board STEVAL-IHM011V1 is a complete platform to evaluate STMicroelectronics power module devices Semitop 2 . Based on a cost effective, flexible

Contextual Info: s e MIKROn SKiiP 102 GD 120 - 304 WT Absolute Maximum Ratings |Conditions 1> V a lu e s Units IGBT & Inverse Diode V ces Operating DC link voltage Vcc 10 T heatsink = 25 °C lc T heatsin k = 25 °C, tp < 1 ms ICM IGBT & Diode Ti 3’ , AC, 1 min. Visol41

SKiiP 613 GB

Contextual Info: s e MIKRDN SKiiP 612 GB 120-203 WT Absolute Maximum Ratings Symbol |Conditions 1 V a lu e s Units 1200 900 600 1200 - 5 5 . . . + 150 3000 5) 490 1200 4300 93 V Operating DC link voltage Theatsink = 25 °C Theatsink = 25 °C; tp < 1 mS IGBT & Diode AC, 1 min.

SKiiP 613 GB

Contextual Info: s e MIKRO n SKiiP 202 GD 120 - 300 WT Absolute Maximum Ratings Symbol | Conditions Values Units 1200 900 200 400 - 55 . . . + 150 3000 5 200 400 2160 23,4 V V A A °C V A A A kA2s 18 30 75 - 2 5 . . . + 85 V V kV/|±s 1> IGBT & Inve rse Diode V ces V is o |4)

skiip gb 120

Contextual Info: 5EMIKRDN SKiiP 1092 GB 170 - 470 WT/FT Absolute Maximum Ratings Symbol | Conditions 1 Values Units 1700 1200 1000 2000 - 5 5 . . . + 150 4000 830 2000 8600 374 V V A A °C V A A A kA2s 18 30 75 -2 5 0 ) .+ 85(70) V V kV/jXS °C IGBT & Inve rse Diode V ces

Contextual Info: s e MIKRO n SKiiP 362 GD 060 - 352 WT Absolute Maximum Ratings Symbol Values Units Operating DC link voltage T h e a ts in k —25 °C T h eatsin k = 25 °C; tp < 1 ms IGBT & Diode AC, 1 min. T heatsin k = 25 °C T heatsin k = 25 °C; tp < 1 ms tp = 10 ms; sin.; T j = 150 °C

Contextual Info: s e MIKRD n SKiiP 912 GB 120 - 303 WT/FT Absolute Maximum Ratings Symbol Values Units 1200 900 900 1800 - 5 5 . . . + 150 3000 5 740 1800 6480 210 V V A A °C V A A A kA2s 18 30 75 -2 5 0 ).+ 85(70) V V kV/|iS °C |Conditions 1) IGBT & Inve rse Diode V ces

SKiiP 613 GB

Contextual Info: s e m ik r d n SKiiP 312 GD 120 - 302 WT Absolute Maximum Ratings | Conditions 11 Values IGBT & Inve rse Diode V ces Operating DC link voltage Vc c 10 Theatsink ~ 25 °C lc Theatsink = 25 °C; tp < 1 ms ICM IGBT & Diode T | 3> AC, 1 min. ViSoi4) Theatsink = 25 °C

skiip gb 120

Contextual Info: s e m ik r o n SKiiP 802 GB 120 - 401 WT/FT Absolute Maximum Ratings Symbol Values Units 1200 900 800 1600 - 5 5 . . . + 150 3000 51 800 1600 8600 374 V V A A A kA2s 18 30 75 - 2 5 0 . . . + 85(70) V V kV/jiS <C | Conditions1> IGBT & Inve rse Diode V ces

semikron skiip 792

Contextual Info: s e MIKRO n SKiiP 792 GB 170 - 370 WT/FT Absolute Maximum Ratings Sym bol Values Units 1700 1200 750 1500 - 5 5 . . . + 150 4000 620 1500 6480 210 V V A A °C V A A A kA2s 18 30 75 - 25 0 . . . + 85(70) V V kV/ns °C | C o n d itio n s 1> IGBT & Inve rse Diode

Contextual Info: 5EMIKRON Symbol Conditions1> Viso, 4 AC, 1min o—I Ü /— >I Q SKiiP 1202 GB 061 - 360 CTV Absolute Maximum Ratings Operating / stor. temperature SKiiPPACK Values Units 2500 V -25.+85 °C 600 400 1200 -40.+150 1200 2400 12000 720 V V A °C A A A kAs2

Contextual Info: C o n d itio n s 1> vV 4> AC, 1 min Operating / stor. tem perature o o —I ¡sol Q S ym bol —I SKiiP 232 GD 120 - 313 CTV Absolute Maximum Ratings SKiiPPACK V a lu e s U n its 3000 V -25.+85 °C 1200 900 200 -40.+150 200 400 1440 10 V V A °C A A A

Contextual Info: se MIKRDN vV ¡sol 4> AC, 1 min Operating / stor. tem perature —I C o n d itio n s 1> Q S ym bol —I o o SKiiP 132 GD 120 - 318 CTV Absolute Maximum Ratings SKiiPPACK V a lu e s U n its 3000 V -25.+85 °C 1200 900 150 -40.+150 150 300 1440 10 V V A

U/25/20/TN26/15/850/connector "26 pin" din 41651 semikron

Contextual Info: V iso , 4 AC, 1min Operating /> —I Conditions 1> Q Symbol —I o Ü SKiiP 192 GD 170 - 374 CTV Absolute Maximum Ratings / SKiiPPACK Values Units 4000 V -25.+85 °C 1700 1200 150 -40.+150 150 300 1440 10 V V A °C A A A kAs2 18 30 20,0 75 V V kHz kV/us

Contextual Info: s e M IK R D N vV ¡sol 4> AC, 1 min Operating / stor. tem perature o o —I C o n d itio n s1> Q Sym bol —I SKiiP 342 GD 120 - 314 CTV Absolute Maximum Ratings SKiiPPACK Values Units 3000 V -25.+85 °C 1200 900 300 -40.+150 300 600 2160 23 V V A °C

skiip gb 120

Contextual Info: s e M IK R D n SKiiP 402 GB 120 - 201 WT Absolute Maximum Ratings | Conditions IGBT & Inve rse Diode Vces Operating DC link voltage Vcc 11* Theatsink = 25 °C lc Theatsink = 25 °C; tp < 1 ms Icm IGBT & Diode T j3 V is o ,4» AC, 1 min. Theatsink = 25 °C

Contextual Info: s e M IK R D n SKiiP 592 GB 170 - 270 WT Absolute Maximum Ratings Symbol IG B T | Conditions1 Values Units Operating DC link voltage T h eatsink = 25 °C T heatsink = 25 °C; tp < 1 ms I G B T & Diode AC, 1 min. T h eatsink = 25 °C T h ea tsink = 25 °C| tp < 1 ms

Contextual Info: Ô13bb71 00GSQ32 2S7 SKiiPPACK S K integrated intelligent Power P A CK 3-phase bridge with brake chopper SKiiP 202 G D L 120 + Driver 404 WT E/U 3) SKiiP 202 GDL 120 - 404 WT (E/U) Driver for 3-phase bridge and brake chopper Absolute Maximum Ratings 3-phase

SKIIP 602 GB 120 301 FT

Contextual Info: s e m ik r d n SKiiP 602 GB 120 - 301 WT/FT Absolute Maximum Ratings Symbol Values Units 1200 900 600 1200 - 5 5 . . . + 150 3000 5 600 1200 6480 210 V V A A °C A A A kA2s 18 30 75 - 25 0 ) . . . + 85(70) V V kV/[is °C | Conditions1> IGBT & Inve rse Diode

Contextual Info: se MIKRDN S K iiP 9 4 2 G B 1 2 0 - 3 1 7 C T V S K iiP P A C K C o n d itio n s 1> vV ¡sol 4> AC, 1 min —I Operating / stor. tem perature Q Sym bol —I o o A b s o lu te M a x im u m R a tin g s Values Units 3000 V -25.+85 °C 1200 900 900 -40.+150