COMMON CATHODE PHOTODIODE Search Results

HFT2191-521

Abstract: Honeywell DBM 01 22NF HFD3180 HFD3180-102 HFT2190-521 uv photodiode wavelength 250 to 260
Contextual Info: Fiber Optic LAN Components LC SFF Duplex OFE 2.5 Gbps FEATURES • Prealigned Fixed LC Duplex Optical Front End OFE • VCSEL packaged with a back monitor photodiode • Common anode and common cathode polarities available • TO-46 hermetic package for

Honeywell DBM 01

Abstract: 22NF HFD3180 HFD3180-002 HFT2180-521 HFT2181-521
Contextual Info: Fiber Optic LAN Components LC SFF Duplex OFE 1.25 Gbps FEATURES • Prealigned Fixed LC Duplex Optical Front End OFE • VCSEL packaged with a back monitor photodiode • Common anode and common cathode polarities available • TO-46 hermetic package for

LC TOSA

Abstract: LC-TOSA PL-SLC-00-SG0-C0 jdsu tosa JDSU 10 Gbps TOSA TO-CAN GR-468-CORE
Contextual Info: Communications componentS 850 nm 4.25 G VCSEL LC TOSA PL-SLx-00-SG0-Cx Key Features • Data rates up to 4.25 Gbps • Optimized for -40 °C to 85 °C transceiver applications • Optical power monitor with excellent tracking • Common cathode, common anode, or differential drive

jdsu tosa

Abstract: datasheet apd rise time, dark, capacitance TOSA PL-SSA-00-S20-C0 apd rise time, dark, capacitance GR-468-CORE
Contextual Info: Communications componentS 850 nm 2.5 G VCSEL TOSA PL-Sxx-00-S20-Cx Key Features • Data rates up to 2.5 Gbps • Optimized for -40 °C to 85 °C transceiver applications • Optical power monitor with excellent tracking • Common cathode or common anode VCSEL TO package

Contextual Info: PL-SLx-00-S20-Cx 850nm 2.5G VCSEL LC TOSA Features • Data Rates up to 2.5 Gbps • 3.3V Operation • Optimized for -40°C to 85°C Transceiver Applications • Optical Power Monitor with Excellent Tracking • Common Cathode or Common Anode VCSEL TO Package Aligned to a Plastic LC

Contextual Info: VTP Process Photodiodes VTP5050H PACKAGE DIMENSIONS inch mm CASE 14 TO-5 HERMETIC CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in a “flat” window, dual lead TO-5 package. Cathode is common to the

VTB5051H

Contextual Info: VTB Process Photodiodes VTB5051H PACKAGE DIMENSIONS inch mm CASE 14 TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in a “flat” window, dual lead TO-5 package. Cathode is common to the

SLDA-61S10-XX

Abstract: IR photodiode array 16 Photodiode-Array dual photodiode LA12 103075
Contextual Info: SLDA-61S10-XX Series Multi-element Photodiode Array Features • • • • 0.97 Photodiodes spaced on 0.97 mm centers Dual solderable anode contacts Common cathode contact on back of array Up to 16 elements per monolithic array Description 1.02 0.41 4.47 typ.

Contextual Info: VTB Process Photodiodes VTB5051H PACKAGE DIMENSIONS inch mm CASE 14 TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in a “flat” window, dual lead TO-5 package. Cathode is common to the

SLD-67HF1A

Abstract: LA12 SLD-67HF1C SLD-67HF1D SLD-67HF1E
Contextual Info: SLD-67HF1 Planar Photodiode Features • • • • • 4.2 Hermetic TO-5 package High short circuit current Low package profile Large active area Multiple dark current ranges available Anode+ ø 9.1 38 min 8.3 5.1 0.41 - 0.48 Cathode Common to case 2.3

Contextual Info: VTB Process Photodiodes VTB6061H PACKAGE DIMENSIONS inch mm CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a “flat” window, dual lead TO-8 package. Cathode is common to the case. These diodes have very

VTB6061H

Contextual Info: VTB Process Photodiodes VTB6061H PACKAGE DIMENSIONS inch mm CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a “flat” window, dual lead TO-8 package. Cathode is common to the case. These diodes have very

S268P

Contextual Info: S268P Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant

Contextual Info: VTP Process Photodiodes VTP6060 PACKAGE DIMENSIONS inch mm CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .032 in2 (20.6 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a “flat” window, dual lead TO-8 package. Cathode is common to the case. These diodes exhibit low

Contextual Info: VTB Process Photodiodes VTB1012H, 1013H PACKAGE DIMENSIONS inch mm CASE 17 TO-46 HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a “flat” window, dual lead TO-46 package. Cathode is common to the case. These diodes have very

LA12

Abstract: SLDA-61S25-XX
Contextual Info: SLDA-61S25-XX Series Multielement Array Features • • • • 2.29 0.090" Diodes spaced on 2.54 mm centers Common cathode contact on the back Solderable anode contacts on top surface Up to 8 elements per monolithic array 1.27 2.54 (0.1") 0.51 Description

Contextual Info: SIEMENS Silizium-4-Quadranten-Fotodiode Silicon Four Quadrant Photodiode Chip position • SFH 234 S Common Cathode 2.0 s 0.45 i— L LO O Ni O OCO ct>ct> c o c o c d m* ^ rrfl 3 .0 j _14.5 12.5" 0.3max Radiant sensitive area 0.5x0.5mm each Approx. weight 1.5 g

S268P

Abstract: silicon photodiode array
Contextual Info: S268P Vishay Telefunken Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant sensitive area of 7.5 mm2.

BI 370

Abstract: bi 370 transistor semiconductors bi 370
Contextual Info: RED ENHANCED 3.1mm2 X 2 BI-CELL PHOTODIODE ANODE CELL #1 .128 .110 45° .030 .035 ∅ .358 .370 ∅ ∅ .200 COMMON CATHODE CASE GROUND ANODE CELL #2 .316 .324 ∅ ODD-3W-2 FEATURES • • • • • .075 .50 MIN .228 .236 80° VIEWING ANGLE ∅ .018 .020

Contextual Info: RED ENHANCED 3.1mm2 X 2 BI-CELL PHOTODIODE ANODE CELL #1 .128 .110 45° .030 .035 ∅ .358 .370 ∅ ∅ .200 COMMON CATHODE CASE GROUND ANODE CELL #2 .316 .324 ∅ ODD-3W-2 FEATURES • • • • • .075 .50 MIN .228 .236 80° VIEWING ANGLE ∅ .018 .020

ODT-880W

Abstract: aoz4060sh GaAlAs detector
Contextual Info: HIGH STABILITY GaAlAs IR EMITTERS FEATURES .018 DIA. 3 PLCS. ON 100 DIA. PIN CIRCLE .006 MAX GLASS ABOVE CAP TOP EDGE ODT-880W • Monitoring diode for power output stability DETECTOR CATHODE COMMON ANODE • Monolithic construction • Low unit price compared to adding a separate

aoz4060sh

Abstract: ODT-880W
Contextual Info: HIGH STABILITY GaAlAs IR EMITTERS .018 DIA. 3 PLCS. ON 100 DIA. PIN CIRCLE .006 MAX GLASS ABOVE CAP TOP EDGE COMMON ANODE FEATURES DETECTOR CATHODE .160 .145 .500 MIN. • Monitoring diode for power output stability • Monolithic construction • Low unit price compared to adding a separate

Silonex

Contextual Info: DATE WHT BLK 3.0 NOM NO. REVISIONS , 1 BY A PP’D ‘ NOTES: 1. LEADS ARE 34AWG, 7 STRAND, PVC INSULATED 2. LEAD LENGTH PER CUSTOMER SPECIFICATION 3. COMMON CATHODE CONFIG­ URATION ALSO AVAILABLE BLK WHT -C * RED -C * GRN YEL 0.005 •Î* ORG RED SCHEMATIC

S2721

Abstract: Si PIN PHOTODIODE DVD
Contextual Info: PHOTODIODE Si PIN photodiode S2721-02, S3096-02, S4204, S8703 Dual-element, plastic package photodiode S2721-02, S3096-02, S4204 and S8703 are dual-element Si PIN photodiodes molded into small plastic packages. Having high sensitivity and low noise, these photodiodes have very low cross-talk between the elements.