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SSM10N961L
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Toshiba Electronic Devices & Storage Corporation
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N-ch MOSFET x 2, Common drain, VSSS=30 V, 0.0128 Ω@10V, TCSPAG-341501 |
Datasheet
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LP5900SDX-1.8/NOPB
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Texas Instruments
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150mA Ultralow-Noise LDO for RF and Analog Circuits Requires No Bypass Capacitor 6-WSON -40 to 125 |
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LP5900TLX-2.8/NOPB
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Texas Instruments
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150mA Ultralow-Noise LDO for RF and Analog Circuits Requires No Bypass Capacitor 4-DSBGA -40 to 125 |
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LP5900TLX-2.85/NOPB
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Texas Instruments
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150mA Ultralow-Noise LDO for RF and Analog Circuits Requires No Bypass Capacitor 4-DSBGA -40 to 125 |
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LP5900TL-2.85/NOPB
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Texas Instruments
|
150mA Ultralow-Noise LDO for RF and Analog Circuits Requires No Bypass Capacitor 4-DSBGA -40 to 125 |
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