CMPT5088 Search Results

Contextual Info: Ce n t r a 1 TM CMPT5088 CMPT5089 Sem i c o n d u c t o r C o r p . NPN SILICON TRANSISTORS DESCRIPTION: The C ENTRAL S E M IC O N D U C TO R CMPT5088, CMPT5089types are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface

CMPT5088

Abstract: CMPT5089
Contextual Info: CMPT5088 CMPT5089 SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5088 and CMPT5089 are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal

Contextual Info: Central" CMPT5088 CMPT5089 Semiconductor Corp. NPN SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5088, CMPT5089 types are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring

VOGT 503 05 001 00

Abstract: Z-Diode ZX 6,2 t24c04 vogt 503 02 010 00 VOGT P7 503 10 010 00 vogt 503 20 010 10 vogt vogt 543 02 010 00 VOGT 503 program eeprom 24c04 6
Contextual Info: Cologne Chip 4QdQCXUUd 752B?280 8B3=!13B 8B3=73;2585>R^]ca^[[Ta fXcW BCP]S?28X]cTaUPRT P]S DRWX_bd_^ac 9P]dPah! Copyright 1994-2001 Cologne Chip AG All Rights Reserved The information presented can not be considered as assured characteristics. Data can change without notice. Parts of the

vogt a7

Abstract: 74HC74 AD10 AD11 AD12 AD14 PCM30 vogt siemens AD14 24v
Contextual Info: 41D1C855D 863C@391 9C4>"24C 9C4>84<3696?S_^db_\\Ub gYdX CDQ^T@39Y^dUbVQSU Q^T ESXY`ce``_bd Copyright 1994-2000 Cologne Chip Designs GmbH All Rights Reserved The information presented can not be considered as assured characteristics. Data can change without notice. Parts of the information presented may be protected by

SMD MARKING CODE C2U

Abstract: smd code marking C2G
Contextual Info: SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW TYPE NO. NEW ! NEW ! DESCRIPTION BVC*0 (VOLTS) BVcto (VOUS) w ao (VOLTS) 1 * 0 « S Ve. (VOUS) MM MM MM MAX 10 15 n FE m MM MAX 20 _ « «»V« (VOUS) le m Va< S *n < H (mA) (VOUS) MAX

2N2484

Abstract: CMPT6429 CMPT2484 CMPT5088 CMPT5089 CMPT6428 CP188 Transistor 2N2484 chip die npn transistor
Contextual Info: Central TM Semiconductor Corp. PROCESS CP188 Small Signal Transistor NPN - Low Noise Amplifier Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 15 x 15 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 4.0 x 4.0 MILS Emitter Bonding Pad Area

220v AC voltage stabilizer schematic diagram

Abstract: 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008
Contextual Info: Prices Guaranteed Until July 31,1998 Catalog 594 Search Products Suppliers New Products CD Only Products How to Order Web Site Help Select an Option Main Menu New Products Help See pages 194 and 196 for new Trimmer Potentiometers. See pages 41 and 42 for new EEPROMS.

CMPT6429

Abstract: 2N2484 CMPT2484 CMPT5088 CMPT5089 CMPT6428 CP188
Contextual Info: Central TM Semiconductor Corp. PROCESS CP188 Small Signal Transistor NPN - Low Noise Amplifier Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 15 x 15 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 4.0 x 4.0 MILS Emitter Bonding Pad Area

BC5468

Abstract: SMD MARKING CODE C1L 8C550 SMD MARKING 5c npn BC5486 bc327 smd BC547 smd C3z SMD MARKING CODE C1G BC840
Contextual Info: SMD TransiStOfS SOT-23 Case U.S. Specification Preferred Series 350mW NEW! NEW! BVa o BVgo (VOITS) (VOLTS) (VOLTS) IcM * V c , (VOLTS) <nA) MM MM MM MAX MM MAX 30 1!i 3.0 10 15 20 75 40 6.0 10 60 100 15 4.5 400 20 40 60 6.0 10 45 250 50 100 60 30 TYPE MO.