CMPD4448 Search Results

CMPD4448

Contextual Info: Central TM Semiconductor Corp. CMPD4448 HIGH SPEED SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD4448 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed

FSM 23

Abstract: 4t1 marking sot-23 MARKING AAD CMPD4448
Contextual Info: Central Sem iconductor Corp. CMPD4448 HIGH SPEED SWITCHING DIODE DESCRIPTION: The C E N TR A L SE M IC O N D U C T O R CMPD4448 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed

Contextual Info: Central Semiconductor Corp. CMPD4448 HIGH SPEED SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD4448 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed

Contextual Info: Central Sem icon du ctor Corp. CMPD4448 HIGH SPEED SW ITCHING DIODE DESCRIPTION: T he CENTRAL S E M IC O N D U C T O R CMPD4448 type is a ultra-high speed silicon switching diode manufacturedby the epitaxial planar process, in an epoxy molded surface m ount package, designed for high speed

Contextual Info: Central Sem iconductor Corp. CMPD4448 HIGH SPEED SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD4448 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed

sot-23 MARKING AAD

Abstract: r5 sot23 SOT23 AAD AAD SOT marking code R5 sot23 diode marking r5
Contextual Info: Central CMPD4448 TM Semiconductor Corp. SURFACE MOUNT HIGH SPEED SILICON SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD4448 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package,

Contextual Info: Central CMPD4448 TM Semiconductor Corp. HIGH SPEED SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD4448 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed switching applications.

Contextual Info: Central Sem iconductor Corp. CMPD4448 HIGH SPEED SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD4448 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed

MARKING CODE R7 DIODE

Abstract: sot-23 MARKING AAD PACKAGE MARKING R7 CMPD4448 MARKING CODE R7
Contextual Info: CMPD4448 SURFACE MOUNT HIGH SPEED SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD4448 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for

AAD SOT

Abstract: sot-23 MARKING AAD CMPD4448 switching diode
Contextual Info: Central CMPD4448 TM Semiconductor Corp. SURFACE MOUNT HIGH SPEED SILICON SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD4448 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package,

Contextual Info: CMPD4448 SURFACE MOUNT HIGH SPEED SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD4448 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for

Contextual Info: Central IIV Sem i c o n d u c t o r C o r p . C M PD 4448 HIGH SPEED SWITCHING DIODE DESCRIPTION: The C ENTRAL S E M IC O N D U C TO R CMPD4448 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface

Contextual Info: Central" CMPD4448 semiconductor Corp. HIGH SPEED SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD4448 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed switching applications.

marking code 336 sot-23

Abstract: sot-23 MARKING AAD 336 SOT23
Contextual Info: Centrar CMPD4448 Semiconductor Corp. SURFACE MOUNT HIGH SPEED SILICON SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD4448 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package,

1N4148 chip

Abstract: DIODE CHIP 1N4148 1n4148 die 1n4148 1n4148 die chip 1N4148.1N4448 CPD83V DIODE R3 1N4154 1N4448
Contextual Info: PROCESS CPD83V Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x11 MILS Die Thickness 7.1MILS Anode Bonding Pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å

FZ 87 1500 6.3V

Abstract: CQ4I MAX8513 MAX8513EEI MAX8514 MAX8514AEI MAX8514EEI FDS6984SQ1
Contextual Info: 19-3178; Rev 0; 2/04 KIT ATION EVALU E L B A AVAIL Wide-Input, High-Frequency, Triple-Output Supplies with Voltage Monitor and Power-On Reset A sequence input allows the outputs to either power up together, or for the DC-DC regulator to power up first and each LDO controller to power up in sequence. An

Contextual Info: jvw\yLwv\ 19-1128; Rev 0; 9/96 D i g i t a l l y C o n t r o l l e d CCFL B a c k l i g h t Pow er Supplies Description The M A X 16 1 0 /M A X 1 611 are fu lly in te g ra te d , h ig h e fficie n cy drivers for c o ld -ca th o d e fluorescent lam ps C C F L s . T hey o p e ra te from a 4 .5 V to 2 6 V p o w e r

Zener Diode 4148

Abstract: zener T 4148 T 4148 zener ZENER diode t 4148 ZENER 4148 1N914 SOT-23 v 4148 zener diode diode t 4148 zener diode 4148 code diode 4148 sot-23
Contextual Info: 02 &J 02E 00432 1989963 CENTRAL SEMICONDUCTOR 0Q00435 pe| 7 | T -2 3 ~ 0 $ - SMD WÊÈÊSSÊÊiÊÊÈâm eentsvsi ssmieonsBwefior sepp. Centres! gs^ ieoiï^ yetai”e@rp. Sx •‘¿¿ri6 SURFACE MOUNTED DEVICES DIODE: SOT-23, SOT-143, S0D-80 ZENER DIODE: SOT-23, S0D-80

1n4148 die chip

Abstract: 1n4448 die chip DIODE CHIP 1N4148 CMPD914 1N4148.1N4448 1N4148 1n4148 die 1N4448 1N4454 1N914B
Contextual Info: Central TM PROCESS CPD83V Switching Diode Semiconductor Corp. High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

Contextual Info: EVALUATION KIT AVAILABLE MAX8513/MAX8514 Wide-Input, High-Frequency Triple-Output Supplies with Voltage Monitor and Power-On Reset General Description The MAX8513/MAX8514 integrate a voltage-mode PWM step-down DC-DC controller and two LDO controllers, a voltage monitor, and a power-on reset for the lowest-cost

Contextual Info: 19-3178; Rev 0; 2/04 KIT ATION EVALU E L B A AVAIL Wide-Input, High-Frequency, Triple-Output Supplies with Voltage Monitor and Power-On Reset Features ♦ Low-Cost DC-DC Controller with Two LDOs ♦ Wide Input Range: 4.5V to 28V The DC-DC controller switching frequency can be set

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

1n4148 die

Abstract: DIODE CHIP 1N4148 1n4148 die chip 1N4148.1N4448 1n914 equivalent 1N4454 1N4148 CMPD914 1N914B 1N4148 chip
Contextual Info: PROCESS CPD63 Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 11 MILS Anode Bonding pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å