CMPAK Search Results

PTSP0003ZA-A

Contextual Info: Package Name CMPAK JEITA Package Code SC-70 D RENESAS Code PTSP0003ZA-A Previous Code CMPAK / CMPAKV MASS[Typ.] 0.006g A e Q c E HE LP L A A x M L1 S A A3 b e A2 Reference Symbol A A1 S e1 b l1 c b2 A-A Section Pattern of terminal position areas A A1 A2 A3

cmpak6

Abstract: SC-88 package
Contextual Info: JEITA Package Code SC-88 Package Name CMPAK-6 RENESAS Code PTSP0006JA-A D Previous Code CMPAK-6 / CMPAK-6V MASS[Typ.] 0.006g A e Q c E HE LP L A A x M L1 S A A3 b Reference Symbol e A2 y S A A1 S e1 b l1 c b2 A-A Section Pattern of terminal position areas

Contextual Info: HRB0502A Silicon Schottky Barrier Diode for Rectifying REJ03G0047-0200Z Rev.2.00 Sep.01.2003 Features • Low forward voltage drop and suitable for high efficiency rectifying. • CMPAK Package is suitable for high density surface mounting and high speed assembly.

Contextual Info: TBB1017 Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier REJ03G1469-0100 Rev.1.00 Aug 07, 2006 Features • • • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Very useful for total tuner cost reduction.

Contextual Info: Preliminary Datasheet TBB1005 R07DS0315EJ1000 Previous: REJ03G0843-0900 Rev.10.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

Contextual Info: HSB83YP Silicon Epitaxial Planar Diode for High Voltage Switching REJ03G0545-0200 Rev.2.00 Jan 07, 2009 Features • High reverse voltage. VR = 250V • CMPAK- 4 package which has two devices parallel connection, is suitable for high density surface mounting.

Contextual Info: Preliminary Datasheet TBB1012 R07DS0317EJ0300 Previous: REJ03G1245-0200 Rev.3.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Features • • • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

diode marking e8

Abstract: marking e8 diode E8 package marking smd e8 HSB276AS
Contextual Info: Diodes SMD Type Silicon Schottky Barrier Diode HSB276AS Features High forward current, Low capacitance. HSB276AS which is interconnected in series configuration is designed for balanced mixer use. CMPAK package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HRC0202A Silicon Schottky Barrier Diode for Rectifying HITACHI ADE-208-210E Z Rev 5 Jul. 1998 Features • Low forward voltage drop and suitable for high effifiency rectifying. • CMPAK Package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HSB124S-J Silicon Epitaxial Planar Diode for High Speed Switching HITACHI ADE-208-488 Z Rev 0 Features • Low reverse current.(IR= 0.01 ¡lAmax) • CMPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information

Contextual Info: CM PA K -4 SOT343R CMPAK-4; Tape reel SMD; standard product orientation 12NC ending 135 Rev. 1 — 13 November 2012 Packing information 1. Packing method Printed plano box Barcode label Reel Tape Barcode label Circular sprocket holes opposite the label side of reel

Contextual Info: 0 - 0.10 2.0 ± 0.2 0.1 0.3 +− 0.05 0.65 (0.65) 0.13 ± 0.05 0.55 ± 0.05 0.2 1.3 ± 0.2 CMPAK 0 – 0.10 2.8 1.5 ± 0.15 1.9 ± 0.2 (0.65) (0.95) (0.95) + 0.10 0.16 – 0.06 + 0.2 − 0.6 + 0.1 0.4 − 0.05 (0.65) SFP 0.8 ± 0.2 + 0.2 1.1 − 0.1 0.3

2SC4463

Abstract: DSA003724
Contextual Info: 2SC4463 Silicon NPN Epitaxial Application UHF frequency converter Outline CMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC4463 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO

HZB5.6MFA

Abstract: DSA003640
Contextual Info: HZB5.6MFA Silicon Planar Zener Diode for Surge Absorb ADE-208-1438 Z Rev.0 Nov. 2001 Features • HZB5.6MFA has four devices in a monolithic, and can absorb surge. • High ESD-Capability 30kV, human body model (IEC61000-4-2). • CMPAK-5 Package is suitable for high density surface mounting.

HVB187YP

Abstract: DSA003640 Hitachi DSA003640
Contextual Info: HVB187YP Silicon Epitaxial Planar Pin Diode for High Frequency Attenuator ADE-208-1411 Z Rev.0 Jun. 2001 Features • Low series resistance. (rf = 5.5 max) • CMPAK-4 package is suitable for high density surface mounting and high speed assembly. Ordering Information

HSB278S

Abstract: DSA003640
Contextual Info: HSB278S Silicon Schottky Barrier Diode for High Speed Switching ADE-208-1383 Z Rev.0 Mar. 2001 Features • Low forward voltage, Low capacitance. • CMPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information

HRB0103A

Abstract: DSA003642
Contextual Info: HRB0103A Silicon Schottky Barrier Diode for Low Voltage High Speed Switching , Rectifying ADE-208-490 Z Rev 0 Apr. 1997 Features • Low forward voltage drop and suitable for high effifiency forward current. • CMPAK package is suitable for high density surface mounting and high speed assembly.

2SC2735

Abstract: 2SC4265 DSA003637
Contextual Info: 2SC4265 Silicon NPN Epitaxial ADE-208-1102A Z 2nd. Edition Mar. 2001 Application VHF RF amplifier, Local oscillator, Mixer Outline CMPAK 3 1 2 Note: Marking is “JC”. 1. Emitter 2. Base 3. Collector 2SC4265 Absolute Maximum Ratings (Ta = 25°C) Item Symbol

3SK296

Abstract: DSA003641
Contextual Info: 3SK296 Silicon N-Channel Dual Gate MOS FET ADE-208-388A Z 2nd. Edition Mar. 2001 Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz • Capable of low voltage operation Outline CMPAK–4 2 3 1 4 Note: 1. Source 2. Gate1

HITACHI DIODE

Abstract: HSB276AYP DSA003637
Contextual Info: HSB276AYP Silicon Schottky Barrier Diode for High Speed Switching ADE-208-1051 Z Rev.0 Jan. 2001 Features • High forward current, Low capacitance. • CMPAK - 4 Package is suitable for high density surface mounting and high speed assembly. Ordering Information

HSB0104YP

Abstract: PTSP0004ZB-A SC-82
Contextual Info: HSB0104YP Silicon Schottky Barrier Diode for High Speed Switching REJ03G0597-0200 Previous: ADE-208-730A Rev.2.00 Apr 12, 2005 Features • Can be used for protection of signal-bus lines. • The mounting efficiency has been improved by incorporating two low-loss diode element into a CMPAK-4 package.

Hitachi DSA002712

Contextual Info: HSB2836 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-485 Z Rev 0 Features • Fast recovery time. • CMPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. Laser Mark Package Code

Hitachi DSA002750

Contextual Info: 2SC4784 Silicon NPN Bipolar Transistor Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10 GHz typ • High gain, low noise figure PG = 15.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline CMPAK 3 1 2 1. Emitter 2. Base

Hitachi DSA002746

Contextual Info: 2SC4784 Silicon NPN Bipolar Transistor Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10 GHz typ • High gain, low noise figure PG = 15.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline CMPAK 3 1 2 1. Emitter 2. Base