CMOS TRANSISTOR 0.35 UM Search Results

Taiyo 93-R 503

Abstract: NR4018T land pattern hsop 8 nr4018 NR6020T4R7M Nippon capacitors 269111-1 R1245N001-TR-FE
Contextual Info: R1245x SERIES 1.2A, 30V Step Down DC/DC converter NO.EA-269-111130 OUTLINE The R1245x series are CMOS-based Step-down DC/DC converter with internal N-channel high side Tr. The ON resistance of the built-in high-side transistor is 0.35Ω and the R1245 can provide the maximum 1.2A output

NR6020T4R7M

Abstract: R1245K003-TR R1245N NR6028T100M GRM32ER71A476 nr4018 Nippon capacitors NR4018T R1245N001 Taiyo 93-R 503
Contextual Info: R1245x SERIES 1.2A, 30V Step Down DC/DC converter NO.EA-269-120118 OUTLINE The R1245x series are CMOS-based Step-down DC/DC converter with internal N-channel high side Tr. The ON resistance of the built-in high-side transistor is 0.35Ω and the R1245 can provide the maximum 1.2A output

Contextual Info: R1 2 4 5 x SERI ES 1.2A, 30V Step Down DC/DC converter NO.EA-269-130322 OUTLINE The R1245x series are CMOS-based Step-down DC/DC converter with internal N-channel high side Tr. The ON resistance of the built-in high-side transistor is 0.35Ω and the R1245 can provide the maximum 1.2A output

Contextual Info: R1245x Series AEC-Q100 Grade 2 Certified 1.2 A, 30 V Step Down DC/DC Converter for Automotive Applications NO. EC-269-140311 OUTLINE The R1245x is a Step-down DC/DC converter with internal N-channel high side Tr. That is developed with CMOS process technology. The ON resistance of the built-in high-side transistor is 0.35 Ω and the R1245x can

vcsel spice model

Abstract: magnetic stripe data conversion ir sensor interface with 8051 laser diode spice modeling micron fuse resistors "x-ray detector" VCSEL photodiode L035 interfacing 8051 with magnetic stripe readers metal detector plans
Contextual Info: RadHard Mixed-Signal Overview Aeroflex Colorado Springs April 2007 www.aeroflex.com/RadHardASIC Mixed-Signal Product Line T What we do…. – We connect real world, analog signals to digital systems – We provide the critical link between sensors and information systems

1 kilo ohm resistor specifications

Abstract: RESISTOR 10 KILO OHM 100 KILO OHM RESISTOR atmel 802 polysilicon resistor atmel 813 1 kilo ohm resistor 10 kilo ohm resistor 3.3 kilo ohm resistor RESISTOR 1 KILO OHM
Contextual Info: Standard Features • • • • • • • • 3.3V CMOS Transistors NPN Transistors Lateral PNP Transistors Analog Resistors Mono-Silicon Capacitor Schottky Diode Poly Fusing Element Multilevel Metallization-Metal Layers 1-3 Optional Features • • •

MOS RM3

Contextual Info: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing

mos rm3 data

Abstract: MOS RM3 BSIM3V3 XH035 RM4L bsim3 dw-mo MICRON POWER RESISTOR Mos Q100 analog devices transistor tutorials
Contextual Info: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and

TUNABLE VCO 10GHZ

Abstract: MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT 0.18 um CMOS VCO 10GHZ oscillator 8563E spectrum analyzer
Contextual Info: A 10GHz CMOS Distributed Voltage Controlled Oscillator1 Hui Wu and Ali Hajimiri Department of Electrical Engineering, California Institute of Technology, Pasadena, CA 91125, USA Abstract A 10 GHz CMOS distributed voltage controlled oscillator DVCO is designed in a 0.35µm BiCMOS process technology using only CMOS transistors. The oscillator achieves a

Contextual Info: Applications • 2G / 3G / 4G wireless systems • LTE transceivers • UHF/VHF public safety bands • Macro base stations • Micro base stations • Pico base stations • Femto base stations • GSM, UMTS, multistandard transceivers • Test and measurement

transistor KT 209 M

Contextual Info: Preliminary IlM lI September 1989 OPEN ASIC DATA SHEET MC GATE ARRAY SERIES 0.8 MICRON SCMOS FEATURES . SUPER CM OS TECHNOLOGY -1 um DRAWN 2 METAL LAYERS . FLEXIBLE I/O CONFIGURATION : INPUT, OUTPUT, THREE-STATE, VCC & VSS . SILICON GATE 0.8 |im EFFECTIVE CHANNEL

Contextual Info: $ TAIW AN TS9007 SEMICONDUCTOR 3Û0mA Low Noise CMOS LDO b RoHS CO M PLIANCE SOT-25 5 4 •ÿt 1 23 P in D e fin itio n : 1. 2. 3. 4. SOT-23 Input Ground Enable Bypass P in D e fin itio n : 1. Ground 2. Output 3. Input 1 2 5. Output General D escription The TS90Û7 series is 3ÛÛmA ultra-low-noise LDO especially designed for battery-power RF and wireless

cmos transistor 0.35 um

Abstract: UM207 ua 471 TRANSISTOR 641 nmos transistor 0.35 um 815 transistor 0.35Um 1P4M
Contextual Info: 0.35um 1P4M Embedded Flat ROM 3.3V, 5.0V updated in 2005.04.05 Features ƒ Vdd Core/IO 3.3V/3.3V, 5V/5V ƒ Substrate P-type (100), Non-EPI ƒ Well Retrograde Twin Well (NW, PW) ƒ Isolation Conventional LOCOS ƒ Transistor Single-Gate CMOS Channel Surface channel NMOS, Buried channel PMOS

all transistor

Abstract: 2P4M transistor 2p4m nmos transistor 0.35 um 73aa cmos transistor 0.35 um of 2p4m
Contextual Info: 0.30um 2P4M High Voltage 13.5V /13.5V updated in 2005.04.05 Features ƒ Vdd Logic, High Voltage 3.3V, 13.5V/ 13.5V ƒ Substrate P-type (100), Non-Epi ƒ Well Logic : Retrograded Twin Well (Nwell, Pwell) HV : Diffused Twin Well (Hnwell, Hpwell) ƒ Isolation

DNDA

Contextual Info: 1.0 m Process Family: XDH10 Modular 1.0μm 650V Trench Insulated BCD Process DESCRIPTION XDH10 is X-Fab´s dielectric trench insulated smart power technology. Main target applications are analog switch ICs, driver ICs for capacitive, inductive and resistive loads and EL / piezo driver ICs for

A2 sot-25 MARKING

Abstract: c2555 8812 sot-25 AME8801 AME8801AEEV AME8801BEEV AME8801CEEV AME8801DEEV AME8801EEEV
Contextual Info: Analog Microelectronics, Inc. AME8801/8812/8840 300mA CMOS LDO n General Description n Features The AME8801/8840 family of positive, linear regulators feature low quiescent current 30µA typ. with low dropout voltage, making them ideal for battery applications.

AME8802

Abstract: AME8802AEEV AME8802BEEV AME8802EEEV AME8802FEEV AME8802GEEV AME8802HEEV AME8802IEEV
Contextual Info: Analog Microelectronics, Inc. AME8802 300mA CMOS LDO n General Description n Features The AME8802 family of positive, linear regulators feature low quiescent current 30µA typ. with low dropout voltage, making them ideal for battery applications. The space-saving SOT-23-5 package is attractive for

0.35Um 1P4M

Abstract: nmos transistor 0.35 um
Contextual Info: 0.35um 1P4M Logic 3.3V updated in 2005.03.24 Features ƒ Vdd Core/IO 3.3V / 5V ƒ Starting Material P(100), Non-Epi ƒ Well Retrograde Twin Well Structure ƒ Isolation Conventional LOCOS ƒ Transistor Dual Gate CMOS Gate Length (Ldrawn) 0.35um Channel Buried Channel PMOS

2P4M

Abstract: cmos transistor 0.35 um transistor 2p4m 0.35Um 2P4M of 2p4m
Contextual Info: 0.35um 2P4M High Voltage 18V / 18V updated in 2005.03.24 Features ƒ Voltage Logic,High Voltage ƒ Starting material 3.3V,18V/18V P-type (100), Non-Epi ƒ Well Structure Logic : Retrograded Twin well (Nwell, Pwell) HV : Diffused Twin well (HNwell, HPwell)

2P4M P 82

Abstract: of 2p4m transistor 2p4m 2P4M cmos transistor 0.35 um nmos transistor 0.35 um 0.35 um CMOS gate area 0.35um cmos transistor parameters
Contextual Info: 0.35um 2P4M Mixed Signal 3.3V / 5V updated in 2005.03.24 Features ƒ Vdd Core/IO 3.3V / 5V ƒ Starting Material P(100), Non-Epi ƒ Well Retrograde Twin Well Structure ƒ Isolation Conventional LOCOS ƒ Transistor Dual Gate CMOS Gate Length (Ldrawn) 0.35um

TRANSISTOR 545

Contextual Info: 0.35um 1P4M Logic 3.3V /5V updated in 2005.03.24 Features ƒ Vdd Core/IO 3.3V / 5V ƒ Starting Material P(100), Non-Epi ƒ Well Retrograde Twin Well Structure ƒ Isolation Conventional LOCOS ƒ Transistor Dual Gate CMOS Gate Length (Ldrawn) 0.35um Channel

MPF102 spice model

Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
Contextual Info: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for

SMD M05 sot23

Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
Contextual Info: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly

2P4M

Abstract: 2P4M in nmos transistor 0.35 um cmos transistor 0.35 um 0.35Um 2P4M 2P4M datasheet 0.35um 2p4m cmos 0.35Um
Contextual Info: 0.35um 2P4M Embedded Flash 3.3V updated in 2005.03.18 Features ƒ Voltage Logic/Cell 3.3V/10V ƒ Starting Material Well Isolation Transistor Gate Length (Ldrawn) Channel Gate Oxide Gate Material LDD & Source/Drain Inter-Layer-Dielectric Metallization Barrier Metal