CMOS PROM Search Results

Contextual Info: INTERNATIONAL CMOS TECHNOLOGY, INC. 27CX321 /27CX322 4,096 X 8-bit CMOS High-Speed Erasable PROM Features Reprogrammablllty Advanced CMOS EPROM Technology — Adds convenience, reduces costs — Windowed package for UV erasure — Allows 100% factory testing

27CX641

Abstract: 27CX641-45 UNIPAK
Contextual Info: INTERNATIONAL CMOS TECHNOLOGY, INC. 27CX641 /27CX642 8,192 X 8-bit CMOS High-Speed Erasable PROM Features Reprogrammabillty • Advanced CMOS EPROM Technology — Adds convenience, reduces costs — Windowed package for UV erasure — Allows 100% factory testing

Contextual Info: & 28C04A Microchip 4K 512 x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum The Microchip Technology Inc 28C04A is a CMOS 4K • CMOS Technology for Low Power Dissipation non-volatile electrically Erasable and Programmable

BIPOLAR PROM PROGRAMMING SPECIFICATION

Abstract: SIGNETICS prom signetics SIGNETICS semiconductor 27HC641 cmos prom
Contextual Info: Philips Components-Signetics 27HC641 Document No. 853-1212 ECN No. 006580 Date o f Issue April 28, 1992 Status Product Specification 64k-bit CMOS PROM 8k x 8 Military CMOS Memory Products DESCRIPTION The 27HC641 is a CMOS, high-speed UV erasable, electronically programmed

CXK27C1000DQ-15

Abstract: 12.75V PGM 1N914 CXK27C1000DQ-20 CXK27C1000DQ
Contextual Info: CXK27C1OOODQ SONY. - 15/20 131072-word X 8-bit Ultraviolet Erasable CMOS PROM Description The CXK27C1 OOODQ ¡is an electrically programmable, ultraviolet erasable CMOS EPROM. The adoption o f CMOS fo r the peripheral circuits allows fo r high speed operation and low power

OT 27C512

Abstract: 27c512 SOIC-28 27C512 microchip
Contextual Info: & 27C512 Microchip _ 512K 64K x 8 CMOS UV Erasable PROM FEATURES DESCRIPTION The Microchip Technology Inc 27C512 is a CMOS 512K • High speed performance bit (ultraviolet light) Erasable (electrically) Program­ — 120ns access time available • CMOS Technology for low power consumption

Contextual Info: & 27HC64 M icrochip 64K 8K x 8 High Speed CMOS UV Erasable PROM FEATURES DESCRIPTION • Bipolar Performance — 40ns Maximum Access Time The Microchip Technology Inc 27HC64 is a CMOS 64K bit ultraviolet light Erasable (electrically) Programm able • CMOS Technology For Low Power Consumption

Contextual Info: & 27C128 M icroch ip _ 128K 16K x 8 CMOS UV Erasable PROM FEATURES DESCRIPTION • High speed performance The Microchip Technology lnc27C 128 is a CMOS 128K bit ultraviolet light E rasable (electrically) Programmable — 120ns Maximum access time • CMOS Technology for low power consumption

smd a10

Abstract: HS-80C86RH SMD A8 smd diode a5 smd diode F6 5962R9570801QJC 5962R9570801QXC 5962R9570801VJC 5962R9570801VXC HM-6617
Contextual Info: HS-6617RH TM Data Sheet August 2000 File Number Radiation Hardened 2K x 8 CMOS PROM Features The Intersil HS-6617RH is a radiation hardened 16K CMOS PROM, organized in a 2K word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process,

11115C

Abstract: DA1020 27HC641-40/J
Contextual Info: 27HC641 M icroch ip 64K 8K x 8 High Speed CMOS UV Erasable PROM FEATURES DESCRIPTION • Bipolar Performance The Microchip Technology Inc 27HC641 is a CMOS 64K — 40ns Maximum Access Time bit ultraviolet light Erasable (electrically) Programm able • CMOS Technology For Low Power Consumption

A7 SMD TRANSISTOR

Abstract: SMD Transistor A12 smd transistor A11 A9 transistor SMD SMD a7 Transistor smd transistor A7 smd transistor A8 5962F9562601VYC SMD A8 Transistor smd a10
Contextual Info: HS-6664RH TM Data Sheet August 2000 File Number Radiation Hardened 8K x 8 CMOS PROM Features The Intersil HS-6664RH is a radiation hardened 64K CMOS PROM, organized in an 8K word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process,

Contextual Info: SONY CXP861P16 CMOS 8-bit Single-chip Microcomputer Description The CXP861P16 is a highly integrated CMOS 8-bit single-chip microcomputer which is mainly composed of an 8-bit CPU, PROM, RAM and I/O ports. This microcomputer features many other highperformance circuits in a single-chip CMOS design,

maxim 27c64

Abstract: DS60011
Contextual Info: & 27C64 M ic r o c h ip 64K 8K x 8 CMOS UV Erasable PROM FEATURES DESCRIPTION • High speed performance The Microchip Technology Inc 27C64 is a CMOS 64K bit — 120ns maximum access time • CMOS Technology for low power consumption ultraviolet light Erasable (electrically) Programmable

Contextual Info: [ /Title CD74 HC4059 /Subject (HighSpeed CMOS Logic CMOS Pro- CD54HC4059, CD74HC4059 Data sheet acquired from Harris Semiconductor SCHS206B High-Speed CMOS Logic CMOS Programmable Divide-by-N Counter February 1998 - Revised May 2003 Features Description

Contextual Info: [ /Title CD74 HC4059 /Subject (HighSpeed CMOS Logic CMOS Pro- CD54HC4059, CD74HC4059 Data sheet acquired from Harris Semiconductor SCHS206B High-Speed CMOS Logic CMOS Programmable Divide-by-N Counter February 1998 - Revised May 2003 Features Description

Contextual Info: R Digital CMOS camera C11440-10C Technical Note April 2015 1. Introduction P3 2. Scientific CMOS Image Sensor FL-280 P3 2.1. CCD image sensor vs. Scientific CMOS Image Sensor FL-280 2.1.1. Structure of CCD image sensor and CMOS image sensor 2.1.2. CCD image sensor vs. conventional CMOS image sensor

MIL-STD-1835 CQCC1-N28

Abstract: MARK F4 5K
Contextual Info: HM-6642/883 Data Sheet March 2004 FN3013.2 512 x 8 CMOS PROM Features The HM-6642/883 is a 512 x 8 CMOS NiCr fusible link Programmable Read Only Memory in the popular 24 pin, byte wide pinout. Synchronous circuit design techniques combine with CMOS processing to give this device high

1124B

Abstract: 27HC256
Contextual Info: 27HC256 M icro ch ip 256K 32K x 8 High Speed CMOS UV Erasable PROM FEATURES DESCRIPTION • The Microchip Technology Inc 27HC256 is a CMOS 256K bit (ultraviolet light) Erasable (electrically) Pro­ grammable Read Only Memory. The device is organ­ ized into 32K words of 8 bit each. Advanced CMOS

7C245

Abstract: b1225 CERAMIC QUAD FLATPACK CQFP 22V10 PAL CMOS device 228X 16R8 7B991 PAL20 7C404 7C128
Contextual Info: Ordering Information RAM, PROM, Dual-Port Static RAM, FIFO, Data Communications PREFIX DEVICE CY CY CY CY CY CY 7C128 62256 7C245 7C006 7C404 7B991 C = CMOS B = BiCMOS SUFFIX -45 D L-70 S L-35 P V-15 J -25 D -5 J MB C C C MB C FAMILY CMOS SRAM - FAST CMOS SRAM - SLOW

Contextual Info: s •I IP> PF216-52 SYSTEMS 64K BIT CMOS UV EPROM/OT PROM SPM27C64Hi5 • SPM27C64H20 SPM27C64Ci5 • SPM27C64C2o SPM27C64 o'1! '/ i j i ■DESCRIPTION The CMOS EPROM SPM27C64Hi5/20 is an 8,192 words x 8 bits erasable and electrically programmable ROM. The peripheral CMOS circuit realizes High-speed and Low supply current. The SPM27C64Hi5/2o is packaged

Contextual Info: 8 Megabit PLASH EEPROM D EN SE-PA C M í C R O S Y S r ii M S D P Z 2 5 6 S 3 2 IW DESCRIPTION: The DPZ256S32IW is a 256K x 32 high-speed CMOS FLASH EEPROM module comprised of eight 128K x 8 monolithic CMOS FLASH EE PROM's, an advanced high-speed CMOS decoder, and

KM93C46V

Contextual Info: KM93C46V CMOS EEPROM 1K Bit Serial Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating Temperature Range — KM93C46V : Commercial — KM93C46VI: Industrial • Enhanced extended operating voltage: 3.0V~5.5V • High performance Advanced CMOS Technology

Contextual Info: SAflSUNG ELECTRONICS INC b7E ]> 7Tb414S GGlbfi?! THE «SMfiK CMOS EEPROM KM28C16/KM28C17 2 K x 8 Bit CMOS Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating Temperature Range — KM28C16/KM28C17: Commercial — KM28C16I/KM28C17I: Industrial

2716 interface 8085

Abstract: smd transistor A8 5962-8869001JA 5962-8869001LA 5962-88690023A 5962-8869002JA 5962-8869002LA HM1-6642-9 HM1-6642B-9 HM-6642
Contextual Info: HM-6642 512 x 8 CMOS PROM March 1997 Features Description • Low Power Standby and Operating Power - ICCSB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .100µA - ICCOP . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA at 1MHz The HM-6642 is a 512 x 8 CMOS NiCr fusible link