CMOS MSI Search Results

MSI Logic

Abstract: UT54ACS14E ut54acts541e UT54ACTS02E UT54ACS14 Tri-State Buffer CMOS cmos msi data book cmos TTL LOGIC DATA BOOK UT54ACS373
Contextual Info: Aeroflex MSI Logic IBIS model Buffer Identification 4/16/2009 Tri-State Devices Input Buffer CMOS TTL Output Buffer 8mA 8mA UT54ACS273 UT54ACTS04 CMOS CMOS E TTL TTL (E) 8mA 8mA 8mA 8mA UT54ACS273 UT54ACS02E UT54ACTS04 UT54ACTS08E CMOS TTL 8mA 8mA UT54ACS273

MC14461

Abstract: MC14462 ion chamber
Contextual Info: MOTOROLA MC14461 MC14462 SMOKE DETECTOR C IR C U IT The MC14461 and MC14462 are smoke detector circuits fabricated using M otorola's standard CMOS process. The MC14461 CMOS MSI has the detector inp u t w ith the standard CMOS static p rotection. The MC14462 has an unprotected CMOS {MOSFET inp u t which

fr9z

Abstract: VG264260
Contextual Info: VG264260CJ 262.144x16—Bit CMOS Dynamic RAM Preliminary Description The device is CMOS Dynamic RAM organized as 262, 144-word x 16 bits. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit design technologies. It is packaged in

71142 a

Contextual Info: CD4504BMS Semiconductor CMOS Hex Voltage Level Shifter for TTL-to-CMOS or CMOS-to-CMOS Operation December 1992 Features Pinout • High Voltage Type 20V Rating CD4504BM S TOP VIEW • Independence of Power Supply Sequence Consider­ ations - VCC can Exceed VDD

Contextual Info: INTEGRATED DEVICE bflE D • 4B25771 DDIMBTO MSI ■ 16K X 32 CMOS DUAL-PORT STATIC RAM MODULE DESCRIPTION FEATURES • High-density 512K CMOS Dual-Port RAM module • Fast access tim es The IDT7M1002 is a 16K x 32 high-speed CMOS Dual-Port Static RAM Module constructed on a co-fired ceramic sub­

pin diagram of ttl 74112

Abstract: pin diagram of 74112 ttl 74112 CI 74112 L0821 L0619 bm42
Contextual Info: SAMSUNG ELECTRONICS INC b?E » 7 c1 b M m 2 KM684000L/KM684000L-L 00175m MSI SriGK CMOS SRAM 524,288 WORD X 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Tim e: 55, 70, 85, 100ns Max. • Low P ow er D issipa tion Standby (CMOS): 1(VW (Typ.) L Version

International CMOS Technology

Abstract: ICT Peel 82S153 pls153 PEEL18CP210 PHIL18CP210 SIGNETICS* 82S153
Contextual Info: INTERNATIONAL CMOS TEC H N O LO G Y INC. Ti Product Preview December 1986 TM (PII1L18CP210 CMOS Programmable Electrically Erasable Logic Device Features ADVANCED CMOS E2PROM TECHNOLOGY — CMOS: 25mA + .7mA/MHz Max — TTL: 35mA + .7mA/MHz Max HIGH PERFORMANCE

CD4504BMS

Abstract: IOH15
Contextual Info: CD4504BMS CMOS Hex Voltage Level Shifter for TTL-to-CMOS or CMOS-to-CMOS Operation December 1992 Features Pinout • High Voltage Type 20V Rating CD4504BMS TOP VIEW • Independence of Power Supply Sequence Considerations - VCC can Exceed VDD - Input Signals can Exceed Both VCC and VDD

level shifter from TTL to CMOS

Abstract: 14KA "Intersil Corporation 1999" B Series CMOS CD4504BMS IOH15 cd4504
Contextual Info: CD4504BMS CMOS Hex Voltage Level Shifter for TTL-to-CMOS or CMOS-to-CMOS Operation December 1992 Features Pinout • High Voltage Type 20V Rating CD4504BMS TOP VIEW • Independence of Power Supply Sequence Considerations - VCC can Exceed VDD - Input Signals can Exceed Both VCC and VDD

PL22V10-10N

Abstract: PL22V10-10A
Contextual Info: Product specification Philips Semiconductors Programmable Logic Devices CMOS programmable electrically erasable logic device PL22V10-10 FEATURES DESCRIPTION • Advanced CMOS EEPROM technology The Philips Semiconductors PL22V10-10 is a CMOS programmable electrically erasable

level shifter from TTL to CMOS

Abstract: CD4504BMS IOH15 CD4504
Contextual Info: CD4504BMS S E M I C O N D U C T O R CMOS Hex Voltage Level Shifter for TTL-to-CMOS or CMOS-to-CMOS Operation December 1992 Features Pinout • High Voltage Type 20V Rating CD4504BMS TOP VIEW • Independence of Power Supply Sequence Considerations - VCC can Exceed VDD

Contextual Info: INTERNATIONAL CMOS TECHNOLOGY, INC. PEEL253 CMOS Programmable Electrically Erasable Logic Device Features • ADVANCED CMOS EEPROM TECHNOLOGY ■ FPLA ARCHITECTURE ■ COMPATIBLE PERFORMANCE — tpD = 30ns max, to E = 30ns max SUPERSET REPLACEMENT FOR PLS153

22CV10

Contextual Info: AMI PEEL 22CV10 Z SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device February 1993 Features General Description Advanced CMOS EEPROM Technology The AMI PEEL22CV10(Z) is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance,

74xx74

Abstract: 74xx163 74xx138 74xx74 data sheet ACTQ244 74xx00 schematic diagram of laptop inverter 74ACXX ALS TTL family characteristics AC244
Contextual Info: Revised January 2000 FACT Descriptions and Family Characteristics Fairchild Semiconductor Advanced CMOS Technology —FACT—Logic Fairchild Semiconductor introduced FACT Fairchild Advanced CMOS Technology logic, a family of high speed advanced CMOS circuits, in 1985.

Contextual Info: EDI8L32512C ^ E D l S12Kx32 SRAM Module ELECTRONIC MSIGNS. NC. ADVANCED INFORMATION 512Kx32 CMOS High Speed Static RAM Features The EDI8L32512C is a high speed, high performance, four megabit density Static RAM organized as a 512Kx32 bit 512Kx32 bit CMOS Static

MC14513B

Abstract: "MOTOROLA CMOS LOGIC DATA" BCD TO EVEN SEGMENT HTL LOGIC MC14070B MC14511B MC14XXXBCL MC14XXXBCP TTL display 7
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC14513B BCD-To-Seven Segment Latch/Decoder/Driver L SUFFIX CERAMIC CASE 726 CMOS MSI Low–Power Complementary MOS The MC14513B BCD–to–seven segment latch/decoder/driver is constructed with complementary MOS (CMOS) enhancement mode devices

EDI8L32512C

Abstract: EDI8L32512C25AC
Contextual Info: EDI8L32512C ^ E D l S12Kx32 SRAM Module ELECTRONIC MSIGNS. NC. ADVANCED INFORMATION 512Kx32 CMOS High Speed Static RAM Features The EDI8L32512C is a high speed, high performance, four megabit density Static RAM organized as a 512Kx32 bit 512Kx32 bit CMOS Static

Contextual Info: INTERNATIONAL CMOS TECHNOLOGY, INC. PEEL173 CMOS Programmable Electrically Erasable Logic Device Features • FPLA ARCHITECTURE ■ ADVANCED CMOS EEPROM TECHNOLOGY — — — ■ LOW POWER CONSUMPTION — 35m A + 1 .OmA/MHz max ■ COMPATIBLE PERFORMANCE

Contextual Info: Product Preview INTERNATIONAlr-CMOi TECHNOLOGY INC. Ftrrrmhnrlinii I \PEEL2 CMOS Programmable Electrically EràsàtrtèT Logic Device: Features ADVANCED CMOS E2PROM TECHNOLOGY — CMOS: 25mA + .7mA/MHz Max — TTL: 35mA + .7mA/MHz Max HIGH PERFORMANCE —

Contextual Info: CD4504BMS ÍH H A R R IS UU S E M I C O N D U C T O R CMOS Hex Voltage Level Shifter for TTL-to-CMOS or CMOS-to-CMOS Operation December 1992 Features • Pinout CD4504BMS TOP VIEW High Voltage Type 20V Bating • Independence of Power Supply Sequence Consider­

Contextual Info: CD4504BMS f f l H A R R IS U U S E M I C O N D U C T O R CMOS Hex Voltage Level Shifter for TTL-to-CMOS or CMOS-to-CMOS Operation December 1992 Pinout Features CD4504BMS TOP VIEW • High Voltage Type 20V Rating • Independence of Power Supply Sequence Consider­

Contextual Info: MC14513B BCD-To-Seven Segment Latch/Decoder/Driver CMOS MSI Low−Power Complementary MOS The MC14513B BCD−to−seven segment latch/decoder/driver is constructed with complementary MOS (CMOS) enhancement mode devices and NPN bipolar output drivers in a single monolithic structure.

MC14070B

Abstract: MC14511B MC14513B MC14513BCP MC14513BCPG
Contextual Info: MC14513B BCD−To−Seven Segment Latch/Decoder/Driver CMOS MSI Low−Power Complementary MOS The MC14513B BCD−to−seven segment latch/decoder/driver is constructed with complementary MOS (CMOS) enhancement mode devices and NPN bipolar output drivers in a single monolithic structure.

MC14513B

Abstract: MC14070B MC14511B MC14513BCP
Contextual Info: MC14513B BCD−To−Seven Segment Latch/Decoder/Driver CMOS MSI Low−Power Complementary MOS The MC14513B BCD−to−seven segment latch/decoder/driver is constructed with complementary MOS (CMOS) enhancement mode devices and NPN bipolar output drivers in a single monolithic structure.